Researcher profile

Finn L. Sebastian

Finn L. Sebastian contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2026arXiv

Photonic Waveguide Circuit Integrated with Carbon Nanotube Single-Photon Source Operating at Room Temperature

Photonic integrated circuits require robust room-temperature single-photon sources to enable scalable quantum technologies. Single-walled carbon nanotubes (CNTs), with their unique excitonic properties and chemical tunability, are attractive candidates, but their integration into photonic circuits remains challenging. In this work, we demonstrate the integration of functionalized CNTs as room-temperature single-photon emitters into photonic cavities and waveguide circuits. (6,5) CNTs with aryl sp$^3$ defects are either stochastically deposited via drop-casting or deterministically positioned on photonic cavities using an anthracene-assisted transfer method guided by real-time photoluminescence monitoring. Photoluminescence spectra reveal cavity-enhanced emission, while second-order autocorrelation measurements confirm single-photon propagation through the photonic integrated circuit, highlighting the potential of CNTs for scalable, room-temperature quantum photonic applications.

preprint2022arXiv

Absolute Quantification of sp$^{3}$ Defects in Semiconducting Single-Wall Carbon Nanotubes by Raman Spectroscopy

The functionalization of semiconducting single-wall carbon nanotubes (SWCNTs) with luminescent sp$^{3}$ defects creates red-shifted emission features in the near-infrared and boosts their photoluminescence quantum yields (PLQYs). While multiple synthetic routes for the selective introduction of sp$^{3}$ defects have been developed, a convenient metric to precisely quantify the number of defects on a SWCNT lattice is not available. Here, we present a direct and simple quantification protocol based on a linear correlation of the integrated Raman D/G$^{+}$ signal ratios and defect densities as extracted from PLQY measurements. Corroborated by a statistical analysis of single-nanotube emission spectra at cryogenic temperature, this method enables the quantitative evaluation of sp$^{3}$ defect densities in (6,5) SWCNTs with an error of $\pm$ 3 defects per micrometer and the determination of oscillator strengths for different defect types. The developed protocol requires only standard Raman spectroscopy and is independent of the defect configuration, dispersion solvent and nanotube length.