Hole conductivity through a defect band in
Semiconductors with wide band gap (3.0 eV), high dielectric constant (> 10), good thermal dissipation, and capable of - and -type doping are highly desirable for high-energy power electronic devices. Recent studies indicate that may be suitable for these applications, standing out as an alternative to . The simple face centered cubic spinel structure of results in isotropic electronic and optical properties, in contrast to the large anisotropic properties of the -monoclinic . In addition, has shown, on average, better thermal dissipation and potential for - and -type conductivity. Here we use density functional theory and hybrid functional calculations to investigate the electronic, optical, and point defect properties of , focusing on the possibility for - and p-type conductivity. We find that the cation antisite is the lowest energy donor defect that can lead to unintentional -type conductivity. The stability of self-trapped holes (small hole polarons) and the high formation energy of acceptor defects make it difficult to achieve -type conductivity. However, with excess of Zn, forming alloys display an intermediate valence band, facilitating -type conductivity. Due to the localized nature of this intermediate valence band, -type conductivity by polaron hopping is expected, explaining the low mobility and low hole density observed in recent experiments.