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Feng Xiong

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Published work

15 published item(s)

preprint2026arXiv

Ace-Skill: Bootstrapping Multimodal Agents with Prioritized and Clustered Evolution

Self-evolving agents present a promising path toward continual adaptation by distilling task interactions into reusable knowledge artifacts. In practice, this paradigm remains hindered by two coupled bottlenecks: data inefficiency, where costly rollout effort is disproportionately spent on low-value samples rather than informative ones, and knowledge interference, where heterogeneous knowledge stored in shared repositories leads to noisy retrieval and task-misaligned guidance. Together, these issues form a self-reinforcing failure loop in which uninformative rollouts yield noisy knowledge, which in turn degrades subsequent rollouts. In this work, we introduce Ace-Skill, a co-evolutionary framework that jointly optimizes rollout allocation and knowledge organization for self-evolving multimodal agents. Specifically, Ace-Skill combines aprioritized sampler with lazy-decay proficiency tracking to focus rollouts on informative and insufficiently mastered samples, and a clustered organizer that semantically clusters knowledge for cleaner retrieval and more reliable adaptation. By improving sampling and organization together, Ace-Skill turns self-evolution into a virtuous cycle in which more informative rollouts produce higher-quality knowledge that supports stronger subsequent rollouts. Across four multimodal tool-use benchmarks, Ace-Skill delivers strong gains (e.g., +35.46% relative improvement in Avg@4 accuracy), enabling an opensource 35B MoE model to match or surpass proprietary models. The acquired knowledge also transfers effectively in a zero-shot manner to smaller 9B and 4B models, allowing resource-constrained agents to inherit advanced capabilities without additional training. The code has been publicly available at https://github.com/AMAP-ML/Ace-Skill.

preprint2026arXiv

ALAM: Algebraically Consistent Latent Action Model for Vision-Language-Action Models

Vision-language-action (VLA) models remain constrained by the scarcity of action-labeled robot data, whereas action-free videos provide abundant evidence of how the physical world changes. Latent action models offer a promising way to extract such priors from videos, but reconstruction-trained latent codes are not necessarily suitable for policy generation: they may predict future observations while lacking the structure needed to be reused or generated coherently with robot actions. We introduce ALAM (Algebraic Latent Action Model), an Algebraically Consistent Latent Action Model that turns temporal relations in action-free video into structural supervision. Given frame triplets, ALAM learns latent transitions that are grounded by reconstruction while being regularized by composition and reversal consistency, encouraging a locally additive transition space. For downstream VLA learning, we freeze the pretrained encoder and use its latent transition sequences as auxiliary generative targets, co-generated with robot actions under a joint flow-matching objective. This couples structured latent transitions with flow-based policy generation, allowing the policy to exploit ALAM's locally consistent transition geometry without requiring latent-to-action decoding. Representation probes show that ALAM reduces additivity and reversibility errors by 25-85 times over unstructured latent-action baselines and improves long-horizon cumulative reconstruction. When transferred to VLA policies, ALAM raises the average success rate from 47.9% to 85.0% on MetaWorld MT50 and from 94.1% to 98.1% on LIBERO, with consistent gains on real-world manipulation tasks. Ablations further confirm that the strongest improvements arise from the synergy between algebraically structured latent transitions and joint flow matching.

preprint2026arXiv

Why Users Go There: World Knowledge-Augmented Generative Next POI Recommendation

Generative point-of-interest (POI) recommendation models based on large language models (LLMs) have shown promising results by formulating next POI prediction as a sequence generation task. However, the knowledge encoded in these models remains fixed after training, making them unable to perceive evolving real-world conditions that shape user mobility decisions, such as local events and cultural trends. To bridge this gap, we propose AWARE (Agent-based World knowledge Augmented REcommendation), which employs an LLM agent to generate location- and time-aware contextual narratives that capture regional cultural characteristics, seasonal trends, and ongoing events relevant to each user. Rather than introducing generic or noisy information, AWARE further anchors these narratives in each user's behavioral context, grounding external world knowledge in personalized spatial-temporal patterns. Extensive experiments on three real-world datasets demonstrate that AWARE consistently outperforms competitive baselines, achieving up to 12.4% relative improvement.

preprint2022arXiv

Understanding the three-dimensional quantum Hall effect in generic multi-Weyl semimetals

The quantum Hall effect in three-dimensional Weyl semimetal (WSM) receives significant attention for the emergence of the Fermi loop where the underlying two-dimensional Hall conductivity, namely, sheet Hall conductivity, shows quantized plateaus. Considering the tilted lattice models for multi Weyl semimetals (mWSMs), we systematically study the Landau levels (LLs) and magneto-Hall conductivity in the presence of parallel and perpendicular (with respect to the Weyl node's separation) magnetic field, i.e., $\mathbf{ B}\parallel z$ and $\mathbf{B}\parallel x$, to explore the impact of tilting and non-linearity in the dispersion. We make use of two (single) node low-energy models to qualitatively explain the emergence of mid-gap chiral (linear crossing of chiral) LLs on the lattice for $\mathbf{ B}\parallel z$ ($\mathbf{ B}\parallel x$). Remarkably, we find that the sheet Hall conductivity becomes quantized for $\mathbf{ B}\parallel z$ even when two Weyl nodes project onto a single Fermi point in two opposite surfaces, forming a Fermi loop with $k_z$ as the good quantum number. On the other hand, the Fermi loop, connecting two distinct Fermi points in two opposite surfaces, with $k_x$ being the good quantum number, causes the quantization in sheet Hall conductivity for $\mathbf{ B}\parallel x$. The quantization is almost lost (perfectly remained) in the type-II phase for $\mathbf{ B}\parallel x$ ($\mathbf{ B}\parallel z$). Interestingly, the jump profiles between the adjacent quantized plateaus change with the topological charge for both of the above cases. The momentum-integrated three-dimensional Hall conductivity is not quantized; however, it bears the signature of chiral LLs as resulting in the linear dependence on $μ$ for small $μ$. The linear zone (its slope) reduces (increases) as the tilt (topological charge) of the underlying WSM increases.

preprint2020arXiv

Enhanced principle component method for fringe removal in cold atom images

Many powerful imaging techniques for cold atoms are based on determining the optical density by comparing a beam image having passed through the atom cloud to a reference image taken under similar conditions with no atoms. In practice the beam profile typically contains interference fringes whose phase is not stable between camera exposures. To reduce the error of these fringes in the computed optical density, an algorithm based on principle component analysis (PCA) is often employed. However, PCA is general purpose and not tailored to the specific case of interference fringes. Here we demonstrate an algorithm that takes advantage of the Fourier-space structure of interference fringes to further reduce the residual fringe signatures in the optical density.

preprint2020arXiv

Temperature Dependent Thermal Boundary Conductance of Monolayer MoS$_2$ by Raman Thermometry

The electrical and thermal behavior of nanoscale devices based on two-dimensional (2D) materials is often limited by their contacts and interfaces. Here we report the temperature-dependent thermal boundary conductance (TBC) of monolayer MoS$_2$ with AlN and SiO$_2$, using Raman thermometry with laser-induced heating. The temperature-dependent optical absorption of the 2D material is crucial in such experiments, which we characterize here for the first time above room temperature. We obtain TBC ~ 15 MWm$^-$$^2$K$^-$$^1$ near room temperature, increasing as ~ T$^0$$^.$$^6$$^5$ in the range 300 - 600 K. The similar TBC of MoS$_2$ with the two substrates indicates that MoS$_2$ is the "softer" material with weaker phonon irradiance, and the relatively low TBC signifies that such interfaces present a key bottleneck in energy dissipation from 2D devices. Our approach is needed to correctly perform Raman thermometry of 2D materials, and our findings are key for understanding energy coupling at the nanoscale.

preprint2019arXiv

Spin and charge transport in topological nodal-line semimetals

We study transport properties of topological Weyl nodal-line semimetals(NLSs). Starting from a minimal lattice model with a single nodal loop, and by focusing on a normal-metal-NLS-normal-metal junction, we investigate the dependence of the novel transport behavior on the orientation of the nodal loop. When the loop is parallel to the junction interfaces, the transmitted current is found to be nearly fully spin-polarized. Correspondingly, there exists a spin orientation, along which the incident electrons would be totally reflected. An unusual resonance of half transmission with the participation of surface states also occurs for a pair of incident electrons with opposite spin orientations. All these phenomena have been shown to originate from the existence of a single forward-propagating mode in the NLS of the junction, and argued to survive in more generic multi-band Weyl NLSs.

preprint2016arXiv

SANTA: Self-Aligned Nanotrench Ablation via Joule Heating for Probing Sub-20 nm Devices

Manipulating materials at the nanometer scale is challenging, particularly if alignment with nanoscale electrodes is desired. Here we describe a lithography-free, self-aligned nanotrench ablation (SANTA) technique to create nanoscale trenches in a polymer like poly(methyl) methacrylate (PMMA). The nanotrenches are self-aligned with carbon nanotube (CNT) and graphene ribbon electrodes through a simple Joule heating process. Using simulations and experiments we investigate how the Joule power, ambient temperature, PMMA thickness, and substrate properties can improve the spatial resolution of this technique. We achieve sub-20 nm nanotrenches for the first time, by lowering the ambient temperature and reducing the PMMA thickness. We also demonstrate a functioning nanoscale resistive memory (RRAM) bit self-aligned with a CNT control device, achieved through the SANTA approach. This technique provides an elegant and inexpensive method to probe nanoscale devices using self-aligned electrodes, without the use of conventional alignment or lithography steps.

preprint2016arXiv

Test of the universality of free fall with atoms in different spin orientations

We report a test of the universality of free fall (UFF) by comparing the gravity acceleration of the $^{87}$Rb atoms in $m_F=+1$ versus that in $m_F=-1$, where the corresponding spin orientations are opposite. A Mach-Zehnder-type atom interferometer is exploited to sequentially measure the free fall acceleration of the atoms in these two magnetic sublevels, and the resultant E$\rm{\ddot{o}}$tv$\rm{\ddot{o}}$s ratio is ${η_S} =(0.2\pm1.2)\times 10^{-7}$. This also gives an upper limit of $1.1\times 10^{-21}$ GeV/m for possible gradient field of the spacetime torsion. The interferometer using atoms in $m_F=\pm 1$ is highly sensitive to the magnetic field inhomogeneity, and a double differential measurement method is developed to alleviate the inhomogeneity influence. Moreover, a proof experiment by modulating the magnetic field is performed, which validates the alleviation of the inhomogeneity influence in our test.

preprint2015arXiv

Nanoscale Phase Change Memory with Graphene Ribbon Electrodes

Phase change memory (PCM) devices are known to reduce in power consumption as the bit volume and contact area of their electrodes are scaled down. Here, we demonstrate two types of low-power PCM devices with lateral graphene ribbon electrodes: one in which the graphene is patterned into narrow nanoribbons and the other where the phase change material is patterned into nanoribbons. The sharp graphene "edge" contacts enable switching with threshold voltages as low as ~3 V, low programming currents (<1 μA SET, <10 μA RESET) and ON/OFF ratios >100. Large-scale fabrication with graphene grown by chemical vapor deposition also enables the study of heterogeneous integration and that of variability for such nanomaterials and devices.

preprint2014arXiv

Hysteresis-Free Nanosecond Pulsed Electrical Characterization of Top-Gated Graphene Transistors

We measure top-gated graphene field effect transistors (GFETs) with nanosecond-range pulsed gate and drain voltages. Due to high-k dielectric or graphene imperfections, the drain current decreases ~10% over time scales of ~10 us, consistent with charge trapping mechanisms. Pulsed operation leads to hysteresis-free I-V characteristics, which are studied with pulses as short as 75 ns and 150 ns at the drain and gate, respectively. The pulsed operation enables reliable extraction of GFET intrinsic transconductance and mobility values independent of sweep direction, which are up to a factor of two higher than those obtained from simple DC characterization. We also observe drain-bias-induced charge trapping effects at lateral fields greater than 0.1 V/um. In addition, using modeling and capacitance-voltage measurements we extract charge trap densities up to 10^12 1/cm^2 in the top gate dielectric (here Al2O3). Our study illustrates important time- and field-dependent imperfections of top-gated GFETs with high-k dielectrics, which must be carefully considered for future developments of this technology

preprint2013arXiv

Ballistic to diffusive crossover of heat flow in graphene ribbons

Heat flow in nanomaterials is an important area of study, with both fundamental and technological implications. However, little is known about heat flow in two-dimensional (2D) devices or interconnects with dimensions comparable to the phonon mean free path (mfp). Here, we find that short, quarter-micron graphene samples reach ~35% of the ballistic heat conductance limit up to room temperature, enabled by the relatively large phonon mfp (~100 nm) in substrate-supported graphene. In contrast, patterning similar samples into nanoribbons (GNRs) leads to a diffusive heat flow regime that is controlled by ribbon width and edge disorder. In the edge-controlled regime, the GNR thermal conductivity scales with width approximately as ~W^{1.8+/-0.3}, being about 100 W/m/K in 65-nm-wide GNRs, at room temperature. Manipulation of device dimensions on the scale of the phonon mfp can be used to achieve full control of their heat-carrying properties, approaching fundamentally limited upper or lower bounds.

preprint2013arXiv

Direct observation of nanometer-scale Joule and Peltier effects in phase change memory devices

We measure power dissipation in phase change memory (PCM) devices by scanning Joule ex-pansion microscopy (SJEM) with ~50 nm spatial and 0.2 K temperature resolution. The temperature rise in the Ge2Sb2Te5 (GST) is dominated by Joule heating, but at the GST-TiW contacts it is a combination of Peltier and current crowding effects. Comparison of SJEM and electrical characterization with simulations of the PCM devices uncovers a thermopower ~350 uV/K for 25 nm thick films of face centered-cubic crystallized GST, and contact resistance ~2.0 x 10^-8 Ohm-m2. Knowledge of such nanoscale Joule, Peltier, and current crowding effects is essential for energy-efficient design of future PCM technology.

preprint2012arXiv

Effects of Tip-Nanotube Interactions on Atomic Force Microscopy Imaging of Carbon Nanotubes

We examine the effect of van der Waals (vdW) interactions between atomic force microscope (AFM) tips and individual carbon nanotubes (CNTs) supported on SiO2. Molecular dynamics (MD) simulations reveal how CNTs deform during AFM measurement, irrespective of the AFM tip material. The apparent height of a single- (double-) walled CNT can be used to estimate its diameter up to ~2 nm (~3 nm), but for larger diameters the CNT cross-section is no longer circular. Our simulations were compared against CNT dimensions obtained from AFM measurements and resonant Raman spectroscopy, with good agreement for the smaller CNT di-ameters. In general, AFM measurements of large-diameter CNTs must be interpreted with care, but the reliability of the approach is improved if knowledge of the number of CNT walls is avail-able, or if additional verification (e.g. by optical techniques) can be obtained.

preprint2009arXiv

Inducing Chalcogenide Phase Change with Ultra-Narrow Carbon Nanotube Heaters

Carbon nanotube (CNT) heaters with sub-5 nm diameter induce highly localized phase change in Ge2Sb2Te5 (GST) chalcogenide. A significant reduction in resistance of test structures is measured as the GST near the CNT heater crystallizes. Effective GST heating occurs at currents as low as 25 uA, significantly lower than in conventional phase change memory with metal electrodes (0.1-0.5 mA). Atomic force microscopy reveals nucleation sites associated with phase change in GST around the CNT heater. Finite element simulations confirm electrical characteristics consistent with the experiments, and reveal the current and phase distribution in GST.