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Fen Liu

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Published work

3 published item(s)

preprint2016arXiv

Enhanced absorption in heterostructures with graphene and truncated photonic crystals

We theoretically and experimentally investigate the optical absorption properties of heterostructures composed of graphene films and truncated photonic crystals (PCs) in the visible range. The experimental results show that the absorption of the heterostructure is enhanced greatly in the whole forbidden gap of PCs compared with that of graphene alone. The absorption is enhanced over a wide angle of incidence for both transverse electric (TE) and transverse magnetic (TM) polarizations. The enhanced absorption band broadens for TE polarization but narrows for TM polarization as the incident angle increases. In the forbidden gap of the PCs, the maximum absorptance of the heterostructures is nearly four times of that of bare graphene films for arbitrary incident angles and polarizations. The optical experiments are in excellent agreement with the theoretical results.

preprint2016arXiv

Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions

Resonant tunneling can lead to inverse tunnel magnetoresistance when impurity levels rather than direct tunneling dominate the transport process. We fabricated hybrid magnetic tunnel junctions of CoFe/LiF/EuS/Ti, with an epitaxial LiF energy barrier joined with a polycrystalline EuS spin-filter bar-rier. Due to the water solubility of LiF, the devices were fully packaged in situ. The devices showed sizeable positive TMR up to 16% at low bias voltages but clearly inverted TMR at higher bias voltages. The TMR inversion depends sensitively on the thickness of LiF, and the tendency of inversion disap-pears when LiF gets thick enough and recovers its intrinsic properties.

preprint2016arXiv

Spin- and Symmetry-Filtering Combined Tunnel Magnetoresistance through Epitaxial MgO/EuS Tunnel Barriers

We created epitaxial magnetic tunnel junctions of FeCo/MgO/EuS on MgO buffered Si (100). Tunnel magnetoresistance reached up to 64% at 4.2 K. An unexpected fast drop of magnetoresistance was recorded for MgO thickness above 1 nm, which is attributed to the forced nonspecular conductance across the EuS conduction band minimum located at the X point, rather than the desired Delta_1 conductance centered around the Gamma point.