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Guo-Xing Miao

Guo-Xing Miao appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

3 published item(s)

preprint2016arXiv

2D implementation of quantum annealing algorisms for fourth order binary optimization problems

Quantum annealing may provide advantages over simulated annealing on solving some problems such as Kth order binary optimization problem. No feasible architecture exists to implement the high-order optimization problem (K > 2) on current quantum annealing hardware. We propose a two-dimensional quantum annealing architecture to solve the 4th order binary optimization problem by encoding four-qubit interactions within the coupled local fields acting on a set of physical qubits. All possible four-body coupling terms for an N-qubit system can be implemented through this architecture and are readily realizable with the existing superconducting circuit technologies. The overhead of the physical qubits is O(N4), which is the same as previously proposed architectures in four-dimensional space. The equivalence between the optimization problem Hamiltonian and the executable Hamiltonian is ensured by a gauge invariant subspace of the experimental system. A scheme to realize local gauge constraint by single ancillary qubit is proposed.

preprint2016arXiv

Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions

Resonant tunneling can lead to inverse tunnel magnetoresistance when impurity levels rather than direct tunneling dominate the transport process. We fabricated hybrid magnetic tunnel junctions of CoFe/LiF/EuS/Ti, with an epitaxial LiF energy barrier joined with a polycrystalline EuS spin-filter bar-rier. Due to the water solubility of LiF, the devices were fully packaged in situ. The devices showed sizeable positive TMR up to 16% at low bias voltages but clearly inverted TMR at higher bias voltages. The TMR inversion depends sensitively on the thickness of LiF, and the tendency of inversion disap-pears when LiF gets thick enough and recovers its intrinsic properties.

preprint2016arXiv

Spin- and Symmetry-Filtering Combined Tunnel Magnetoresistance through Epitaxial MgO/EuS Tunnel Barriers

We created epitaxial magnetic tunnel junctions of FeCo/MgO/EuS on MgO buffered Si (100). Tunnel magnetoresistance reached up to 64% at 4.2 K. An unexpected fast drop of magnetoresistance was recorded for MgO thickness above 1 nm, which is attributed to the forced nonspecular conductance across the EuS conduction band minimum located at the X point, rather than the desired Delta_1 conductance centered around the Gamma point.