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Feliciano Giustino

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Published work

42 published item(s)

preprint2022arXiv

Ab initio self-consistent many-body theory of polarons at all couplings

We present a theoretical framework to describe polarons from first principles within a many-body Green's function formalism. Starting from a general electron-phonon Hamiltonian, we derive a self-consistent Dyson equation in which the phonon-mediated self-energy is composed by two distinct terms. One term is the Fan-Migdal self-energy and describes dynamic electron-phonon processes, the other term is a new contribution to the self-energy originating from the static displacements of the atomic nuclei in the polaronic ground state. The lowest-order approximation to the present theory yields the standard many-body perturbation theory approach to electron-phonon interactions in the limit of large polarons, and the ab initio polaron equations introduced in [Sio et al., Phys. Rev. B 99, 235139 (2019); Phys. Rev. Lett. 122, 246403 (2019)] in the limit of small polarons. A practical recipe to implement the present unifying formalism in first-principles calculations is outlined. We apply our method to the Fröhlich model, and obtain remarkably accurate polaron energies at all couplings, in line with Feynman's polaron theory and diagrammatic Monte Carlo calculations. We also recover the well-known results of Fröhlich and Pekar at weak and strong coupling, respectively. The present approach enables predictive many-body calculations of polarons in real materials at all couplings.

preprint2022arXiv

Anisotropic-strain-enhanced hole mobility in GaN by lattice matching to ZnGeN$_2$ and MgSiN$_2$

The key obstacle toward realizing integrated gallium nitride (GaN) electronics is its low hole mobility. Here, we explore the possibility of improving the hole mobility of GaN via epitaxial matching to II-IV nitride materials that have recently become available, namely ZnGeN$_2$ and MgSiN$_2$. We perform state-of-the-art calculations of the hole mobility of GaN using the ab initio Boltzmann transport equation. We show that effective uniaxial compressive strain of GaN along the $[1\bar{1}00]$ by lattice matching to ZnGeN$_2$ and MgSiN$_2$ results in the inversion of the heavy hole band and split-off hole band, thereby lowering the effective hole mass in the compression direction. We find that lattice matching to ZnGeN$_2$ and MgSiN$_2$ induces an increase of the room-temperature hole mobility by 50% and 260% as compared to unstrained GaN, respectively. Examining the trends as a function of strain, we find that the variation in mobility is highly nonlinear; lattice matching to a hypothetical solid solution of Zn$_{0.75}$Ge$_{0.75}$Mg$_{0.25}$Si$_{0.25}$N$_2$ would already increase the hole mobility by 160%.

preprint2022arXiv

Many-body Green's function approaches to the doped Fröhlich solid: Exact solutions and anomalous mass enhancement

In polar semiconductors and insulators, the Fröhlich interaction between electrons and long-wavelength longitudinal optical phonons induces a many-body renormalization of the carrier effective masses and the appearence of characteristic phonon sidebands in the spectral function, commonly dubbed 'polaron satellites'. The simplest model that captures these effects is the Fröhlich model, whereby electrons in a parabolic band interact with a dispersionless longitudinal optical phonon. The Fröhlich model has been employed in a number of seminal papers, from early perturbation-theory approaches to modern diagrammatic Monte Carlo calculations. One limitation of this model is that it focuses on undoped systems, thus ignoring carrier screening and Pauli blocking effects that are present in real experiments on doped samples. To overcome this limitation, we here extend the Fröhlich model to the case of doped systems, and we provide exact solutions for the electron spectral function, mass enhancement, and polaron satellites. We perform the analysis using two approaches, namely Dyson's equation with the Fan-Migdal self-energy, and the second-order cumulant expansion. We find that these two approaches provide qualitatively different results. In particular, the Dyson's approach yields better quasiparticle masses and worse satellites, while the cumulant approach provides better satellite structures, at the price of worse quasiparticle masses. Both approaches yield an anomalous enhancement of the electron effective mass at finite doping levels, which in turn leads to a breakdown of the quasiparticle picture in a significant portion of the phase diagram.

preprint2022arXiv

Unified ab initio description of Fröhlich electron-phonon interactions in two-dimensional and three-dimensional materials

\textit{Ab initio} calculations of electron-phonon interactions including the polar Fröhlich coupling have advanced considerably in recent years. The Fröhlich electron-phonon matrix element is by now well understood in the case of bulk three-dimensional (3D) materials. In the case of two-dimensional (2D) materials, the standard procedure to include Fröhlich coupling is to employ Coulomb truncation, so as to eliminate artificial interactions between periodic images of the 2D layer. While these techniques are well established, the transition of the Fröhlich coupling from three to two dimensions has not been investigated. Furthermore, it remains unclear what error one makes when describing 2D systems using the standard bulk formalism in a periodic supercell geometry. Here, we generalize previous work on the \textit{ab initio} Fröhlich electron-phonon matrix element in bulk materials by investigating the electrostatic potential of atomic dipoles in a periodic supercell consisting of a 2D material and a continuum dielectric slab. We obtain a unified expression for the matrix element, which reduces to the existing formulas for 3D and 2D systems when the interlayer separation tends to zero or infinity, respectively. This new expression enables an accurate description of the Fröhlich matrix element in 2D systems without resorting to Coulomb truncation. We validate our approach by direct \textit{ab initio} density-functional perturbation theory calculations for monolayer BN and MoS$_2$, and we provide a simple expression for the 2D Fröhlich matrix element that can be used in model Hamiltonian approaches. The formalism outlined in this work may find applications in calculations of polarons, quasiparticle renormalization, transport coefficients, and superconductivity, in 2D and quasi-2D materials.

preprint2022arXiv

Unified approach to polarons and phonon-induced band structure renormalization

Ab initio calculations of the phonon-induced band structure renormalization are currently based on the perturbative Allen-Heine theory and its many-body generalizations. These approaches are unsuitable to describe materials where electrons form localized polarons. Here, we develop a self-consistent, many-body Green's function theory of band structure renormalization that incorporates localization and self-trapping. We show that the present approach reduces to the Allen-Heine theory in the weak-coupling limit, and to total energy calculations of self-trapped polarons in the strong-coupling limit. To demonstrate this methodology, we reproduce the path-integral results of Feynman and diagrammatic Monte Carlo calculations for the Fröhlich model at all couplings, and we calculate the zero point renormalization of the band gap of an ionic insulator including polaronic effects.

preprint2021arXiv

GW band structure of monolayer MoS2 using the SternheimerGW method and effect of dielectric environment

Monolayers of transition-metal dichalcogenides (TMDs) hold great promise as future nanoelectronic and optoelectronic devices. An essential feature for achieving high device performance is the use of suitable supporting substrates, which can affect the electronic and optical properties of these two-dimensional (2D) materials. Here, we perform many-body GW calculations using the SternheimerGW method to investigate the quasiparticle band structure of monolayer MoS2 subject to an effective dielectric screening model, which is meant to approximately describe substrate polarization in real device applications. We show that, within this model, the dielectric screening has a sizable effect on the quasiparticle band gap; for example, the gap renormalization is as large as 250 meV for MoS2 with model screening corresponding to SiO2. Within the G0W0 approximation, we also find that the inclusion of the effective screening induces a direct band gap, in contrast to the unscreened monolayer. We also find that the dielectric screening induces an enhancement of the carrier effective masses by as much as 27% for holes, shifts plasmon satellites, and redistributes quasiparticle weight. Our results highlight the importance of the dielectric environment in the design of 2D TMD-based devices.

preprint2021arXiv

The 2021 Quantum Materials Roadmap

In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topological quantum matter, two-dimensional materials and their van der Waals heterostructures, Moire materials, Floquet time crystals, as well as materials and devices for quantum computation with Majorana fermions. In this Roadmap collection we aim to capture a snapshot of the most recent developments in the field, and to identify outstanding challenges and emerging opportunities. The format of the Roadmap, whereby experts in each discipline share their viewpoint and articulate their vision for quantum materials, reflects the dynamic and multifaceted nature of this research area, and is meant to encourage exchanges and discussions across traditional disciplinary boundaries. It is our hope that this collective vision will contribute to sparking new fascinating questions and activities at the intersection of materials science, condensed matter physics, device engineering, and quantum information, and to shaping a clearer landscape of quantum materials science as a new frontier of interdisciplinary scientific inquiry.

preprint2020arXiv

Electron-polaron dichotomy of charge carriers in perovskite oxides

Many transition metal oxides (TMOs) are Mott insulators due to strong Coulomb repulsion between electrons, and exhibit metal-insulator transitions (MITs) whose mechanisms are not always fully understood. Unlike most TMOs, minute doping in CaMnO3 induces a metallic state without any structural transformations. This material is thus an ideal platform to explore band formation through the MIT. Here, we use angle-resolved photoemission spectroscopy to visualize how electrons delocalize and couple to phonons in CaMnO3. We show the development of a Fermi surface where mobile electrons coexist with heavier carriers, strongly coupled polarons. The latter originate from a boost of the electron-phonon interaction (EPI). This finding brings to light the role that the EPI can play in MITs even caused by purely electronic mechanisms. Our discovery of the EPI-induced dichotomy of the charge carriers explains the transport response of Ce-doped CaMnO3 and suggests strategies to engineer quantum matter from TMOs.

preprint2020arXiv

Structural, electronic, elastic, power and transport properties of $β$-Ga$_2$O$_3$ from first-principles

We investigate the structural, electronic, vibrational, power and transport properties of the $β$ allotrope of Ga$_2$O$_3$ from first-principles. We find phonon frequencies and elastic constants that reproduce the correct band ordering, in agreement with experiment. We use the Boltzmann transport equation to compute the intrinsic electron and hole drift mobility and obtain a room temperature values of 258 cm$^2$/Vs and 1.2 cm$^2$/Vs, respectively as well as 6300 cm$^2$/Vs and 13 cm$^2$/Vs at 100 K. Through a spectral decomposition of the scattering contribution to the inverse mobility, we find that multiple longitudinal optical modes of B$_u$ symmetry are responsible for the electron mobility of $β$- Ga$_2$O$_3$ but that many acoustic modes also contributes, making it essential to include all scattering processes in the calculations. Using the von Hippel low energy criterion we computed the breakdown field to be 5.8 MV/cm at room temperature yielding a Baliga's figure of merit of 1250 with respect to silicon, ideal for high-power electronics. This work presents a general framework to predictively investigate novel high-power electronic materials.

preprint2019arXiv

First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials

One of the fundamental properties of semiconductors is their ability to support highly tunable electric currents in the presence of electric fields or carrier concentration gradients. These properties are described by transport coefficients such as electron and hole mobilities. Recently, advances in electronic structure methods for real materials have made it possible to study these properties with predictive accuracy and without resorting to empirical parameters. Here, we review the most recent developments in the area of ab initio calculations of carrier mobilities of semiconductors. In the first part, we offer a brief historical overview of approaches to the calculation of carrier mobilities, and we establish the conceptual framework underlying modern ab initio approaches. We summarize the Boltzmann theory of carrier transport and we discuss its scope of applicability, merits, and limitations in the broader context of many-body Green's function approaches. We discuss recent implementations of the Boltzmann formalism within the context of density functional theory and many-body perturbation theory calculations, placing an emphasis on the key computational challenges and suggested solutions. In the second part, we discuss recent investigations of classic materials such as silicon, diamond, GaAs, GaN, Ga2O3, and lead halide perovskites as well as low-dimensional semiconductors such as graphene, silicene, phosphorene, MoS2, and InSe. We also review recent efforts toward high-throughput calculations of carrier transport. In the last part, we discuss the extension of the methodology to study spintronics and topological materials and we comment on the possibility of incorporating Berry-phase effects and many-body correlations beyond the standard Boltzmann formalism.

preprint2019arXiv

Theory of the special displacement method for electronic structure calculations at finite temperature

Calculations of electronic and optical properties of solids at finite temperature including electron-phonon interactions and quantum zero-point renormalization have enjoyed considerable progress during the past few years. Among the emerging methodologies in this area, we recently proposed a new approach to compute optical spectra at finite temperature including phonon-assisted quantum processes via a single supercell calculation [Zacharias and Giustino, Phys. Rev. B 94, 075125 (2016)]. In the present work we considerably expand the scope of our previous theory starting from a compact reciprocal space formulation, and we demonstrate that this improved approach provides accurate temperature-dependent band structures in three-dimensional and two-dimensional materials, using a special set of atomic displacements in a single supercell calculation. We also demonstrate that our special displacement reproduces the thermal ellipsoids obtained from X-ray crystallography, and yields accurate thermal averages of the mean-square atomic displacements. At a more fundamental level, we show that the special displacement represents an exact single-point approximant of an imaginary-time Feynman's path integral for the lattice dynamics. This enhanced version of the special displacement method enables non-perturbative, robust, and straightforward ab initio calculations of the electronic and optical properties of solids at finite temperature, and can easily be used as a post-processing step to any electronic structure code. Given its simplicity and numerical stability, the present development is suited for high-throughput calculations of band structures, quasiparticle corrections, optical spectra, and transport coefficients at finite temperature.

preprint2017arXiv

Universal Scaling in Intrinsic Resistivity of Two-Dimensional Metal Borophene

Two-dimensional boron sheets (borophenes) have been successfully synthesized in experiments and are expected to exhibit intriguing transport properties such as the emergence of superconductivity and Dirac Fermions. However, quantitative understanding of intrinsic electrical transport of borophene has not been achieved. Here, we report a comprehensive first-principles study on electron-phonon driven intrinsic electrical resistivity (\r{ho}) of emerging borophene structures. We find that the resistivity is highly dependent on the atomic structures and electron density of borophene. Low-temperature resistivity of borophene \r{ho} exhibits a universal scaling behavior, which increases rapidly with temperature T (\r{ho}~T^4), while \r{ho} increases linearly for a large temperature window T > 100 K. It is observed that this universal behavior of intrinsic resistivity is well described by Bloch-Grünesisen model. Different from graphene and conventional three-dimensional metals, the intrinsic resistivity of borophenes can be easily tuned by adjusting carrier densities while the Bloch-Grünesisen temperature is nearly fixed at ~100 K. Our work suggests monolayer boron can serve as an intriguing platform for realizing high-tunable two-dimensional electronic devices.

preprint2016arXiv

Electron-phonon interaction and pairing mechanism in superconducting Ca-intercalated bilayer graphene

Using the {\it ab initio} anisotropic Eliashberg theory including Coulomb interactions, we investigate the electron-phonon interaction and the pairing mechanism in the recently-reported superconducting Ca-intercalated bilayer graphene. We find that C$_6$CaC$_6$ can support phonon-mediated superconductivity with a critical temperature $T_{\rm c}=$6.8-8.1~K, in good agreement with experimental data. Our calculations indicate that the low-energy Ca$_{xy}$ vibrations are critical to the pairing, and that it should be possible to resolve two distinct superconducting gaps on the electron and hole Fermi surface pockets.

preprint2016arXiv

EPW: Electron-phonon coupling, transport and superconducting properties using maximally localized Wannier functions

The EPW (Electron-Phonon coupling using Wannier functions) software is a Fortran90 code that uses density-functional perturbation theory and maximally localized Wannier functions for computing electron-phonon couplings and related properties in solids accurately and efficiently. The EPW v4 program can be used to compute electron and phonon self-energies, linewidths, electron-phonon scattering rates, electron-phonon coupling strengths, transport spectral functions, electronic velocities, resistivity, anisotropic superconducting gaps and spectral functions within the Migdal-Eliashberg theory. The code now supports spin-orbit coupling, time-reversal symmetry in non-centrosymmetric crystals, polar materials, and $\mathbf{k}$ and $\mathbf{q}$-point parallelization. Considerable effort was dedicated to optimization and parallelization, achieving almost a ten times speedup with respect to previous releases. A computer test farm was implemented to ensure stability and portability of the code on the most popular compilers and architectures. Since April 2016, version 4 of the EPW code is fully integrated in and distributed with the Quantum ESPRESSO package, and can be downloaded through QE-forge at http://qe-forge.org/gf/project/q-e.

preprint2016arXiv

Lead-Free Halide Double Perovskites via Heterovalent Substitution of Noble Metals

Lead-based halide perovskites are emerging as the most promising class of materials for next generation optoelectronics. However, despite the enormous success of lead-halide perovskite solar cells, the issues of stability and toxicity are yet to be resolved. Here we report on the computational design and the experimental synthesis of a new family of Pb-free inorganic halide double-perovskites based on bismuth or antimony and noble metals. Using first-principles calculations we show that this hitherto unknown family of perovskites exhibits very promising optoelectronic properties, such as tunable band gaps in the visible range and low carrier effective masses. Furthermore, we successfully synthesize the double perovskite Cs2BiAgCl6, we perform structural refinement using single-crystal X-ray diffraction, and we characterize its optical properties via optical absorption and photoluminescence measurements. This new perovskite belongs to the Fm-3m space group, and consists of BiCl6 and AgCl6 octahedra alternating in a rock-salt face-centered cubic structure. From UV-Vis and PL measurements we obtain an indirect gap of 2.2 eV. The new compound is very stable under ambient conditions.

preprint2016arXiv

On the combined use of GW approximation and cumulant expansion in the calculations of quasiparticle spectra: The paradigm of Si valence bands

Since the earliest implementations of the various GW approximations and cumulant expansion in the calculations of quasiparticle propagators and spectra, several attempts have been made to combine the advantageous properties and results of these two theoretical approaches. While the GW plus cumulant approach has proven successful in interpreting photoemission spectroscopy data in solids, the formal connection between the two methods has not been investigated in detail. By introducing a general bijective integral representation of the cumulants, we can rigorously identify at which point these two approximations can be connected for the paradigmatic model of quasiparticle interaction with the dielectric response of the system that has been extensively exploited in recent interpretations of the satellite structures in photoelectron spectra. We establish a protocol for consistent practical implementation of the thus established GW+cumulant scheme, and illustrate it by comprehensive state-of-the-art first-principles calculations of intrinsic angle-resolved photoemission spectra from Si valence bands.

preprint2016arXiv

One-shot calculation of temperature-dependent optical spectra and phonon-induced band-gap renormalization

Recently, Zacharias et al [Phys. Rev. Lett. 115, 177401 (2015)] developed a new ab initio theory of temperature-dependent optical absorption spectra and band gaps in semiconductors and insulators. In that work the zero-point renormalization and the temperature dependence were obtained by sampling the nuclear wavefunctions using a stochastic approach. In the present work, we show that the stochastic sampling can be replaced by fully deterministic supercell calculations based on a single optimal configuration of the atomic positions. We demonstrate that a single calculation is able to capture the temperature-dependent band gap renormalization including quantum nuclear effects in direct and indirect-gap semiconductors, as well as phonon-assisted optical absorption in indirect-gap semiconductors. In order to demonstrate this methodology we calculate from first principles the temperature-dependent optical absorption spectra and the renormalization of direct and indirect band gaps in Si, C, and GaAs, and we obtain good agreement with experiment and with previous calculations. In this work we also establish the formal connection between the Williams-Lax theory of optical transitions and the related theories of indirect absorption by Hall, Bardeen, and Blatt, and of temperature-dependent band structures by Allen and Heine. Furthermore, we identify an additional band gap renormalization that arises in the case of degenerate band extrema, and which has not been considered in previous work. The present methodology enables systematic ab initio calculations of optical absorption spectra at finite temperature, including both direct and indirect transitions. This feature will be useful for high-throughput calculations of optical properties at finite temperature, and for calculating temperature-dependent optical properties using high-level theories such as GW and Bethe-Salpeter approaches.

preprint2016arXiv

Quantitative analysis of valence photoemission spectra and quasiparticle excitations at chromophore-semiconductor interfaces

Investigating quasiparticle excitations of molecules on surfaces through photoemission spectroscopy forms a major part of nanotechnology research. Resolving spectral features at these interfaces requires a comprehensive theory of electron removal and addition processes in molecules and solids which captures the complex interplay of image charges, thermal effects and configurational disorder. We here develop such a theory and calculate the quasiparticle energy-level alignment and the valence photoemission spectrum for the prototype biomimetic solar cell interface between anatase TiO2 and the N3 chromophore. By directly matching our calculated photoemission spectrum to experimental data we clarify the atomistic origin of the chromophore peak at low binding energy. This case study sets a new standard in the interpretation of photoemission spectroscopy at complex chromophore/semiconductor interfaces.

preprint2016arXiv

Structure of a Water Monolayer on the Anatase TiO$_2$(101) Surface

Titanium dioxide (TiO$_2$) plays a central role in the study of artificial photosynthesis, owing to its ability to perform photocatalytic water splitting. Despite over four decades of intense research efforts in this area, there is still some debate over the nature of the first water monolayer on the technologically-relevant anatase TiO$_2$ (101) surface. In this work we use first-principles calculations to reverse-engineer the experimental high-resolution X-ray photoelectron spectra measured for this surface in [Walle et al., J. Phys. Chem. C 115, 9545 (2011)], and find evidence supporting the existence of a mix of dissociated and molecular water in the first monolayer. Using both semilocal and hybrid functional calculations we revise the current understanding of the adsorption energetics by showing that the energetic cost of water dissociation is reduced via the formation of a hydrogen-bonded hydroxyl-water complex. We also show that such a complex can provide an explanation of an unusual superstructure observed in high-resolution scanning tunneling microscopy experiments.

preprint2016arXiv

The GW plus cumulant method and plasmonic polarons: application to the homogeneous electron gas

We study the spectral function of the homogeneous electron gas using many-body perturbation theory and the cumulant expansion. We compute the angle-resolved spectral function based on the GW approximation and the `GW plus cumulant' approach. In agreement with previous studies, the GW spectral function exhibits a spurious plasmaron peak at energies 1.5$ω_{\rm pl}$ below the quasiparticle peak, $ω_{\rm pl}$ being the plasma energy. The GW plus cumulant approach, on the other hand, reduces significantly the intensity of the plasmon-induced spectral features and renormalizes their energy relative to the quasiparticle energy to $ω_{\rm pl}$. Consistently with previous work on semiconductors, our results show that the HEG is characterized by the emergence of plasmonic polaron bands, that is, broadened replica of the quasiparticle bands, red-shifted by the plasmon energy.

preprint2016arXiv

Theory of electron-plasmon coupling in semiconductors

The ability to manipulate plasmons is driving new developments in electronics, optics, sensing, energy, and medicine. Despite the massive momentum of experimental research in this direction, a predictive quantum-mechanical framework for describing electron-plasmon interactions in real materials is still missing. Here, starting from a many-body Green's function approach, we develop an ab initio approach for investigating electron-plasmon coupling in solids. As a first demonstration of this methodology, we show that electron-plasmon scattering is the primary mechanism for the cooling of hot carriers in doped silicon, it is key to explain measured electron mobilities at high doping, and it leads to a quantum zero-point renormalization of the band gap in agreement with experiment.

preprint2016arXiv

Unified theory of electron-phonon renormalization and phonon-assisted optical absorption

We present a theory of electronic excitation energies and optical absorption spectra which incorporates energy-level renormalization and phonon-assisted optical absorption within a unified framework. Using time-independent perturbation theory we show how the standard approaches for studying vibronic effects in molecules and those for addressing electron-phonon interactions in solids correspond to slightly different choices for the non-interacting Hamiltonian. Our present approach naturally leads to the Allen-Heine theory of temperature-dependent energy levels, the Franck-Condon principle, the Herzberg-Teller effect and to phonon-assisted optical absorption in indirect band gap materials. In addition, our theory predicts sub-gap phonon-assisted optical absorption in direct gap materials, as well as an exponential edge which we tentatively assign to the Urbach tail. We also consider a semiclassical approach to the calculation of optical absorption spectra which simultaneously captures energy-level renormalization and phonon-assisted transitions and is especially suited to first-principles electronic structure calculations. We demonstrate this approach by calculating the phonon-assisted optical absorption spectrum of bulk silicon.

preprint2015arXiv

Band structures of plasmonic polarons

Using state-of-the-art many-body calculations based on the `GW plus cumulant' approach, we show that electron-plasmon interactions lead to the emergence of plasmonic polaron bands in the band structures of common semiconductors. Using silicon and group IV transition metal dichalcogenide monolayers (AX2 with A=Mo,W and X=S,Se) as prototypical examples, we demonstrate that these new bands are a general feature of systems characterized by well defined plasmon resonances. We find that the energy vs. momentum dispersion relations of these plasmonic structures closely follow the standard valence bands, although they appear broadened and blueshifted by the plasmon energy. Based on our results we identify general criteria for observing plasmonic polaron bands in the angle-resolved photoelectron spectra of solids.

preprint2015arXiv

First-principles study of structurally modulated multiferroic CaMn$_7$O$_{12}$

We study the electronic and magnetic structures of multiferroic CaMn$_7$O$_{12}$ by first-principle calculations, based on the experimentally determined modulated crystal structure. We confirm the presence of a 3$d$ orbital modulation of the Mn2 (Mn$^{3+}$) sites, previously inferred from the Jahn-Teller crystal distortions. Our results indicate that in the multiferroic phase the magnetic structure of the Mn3 (Mn$^{4+}$) sites is anharmonically modulated via orbitally-mediated coupling with the structural modulation, and that the Dzyaloshinskii-Moriya and exchange striction mechanisms contribute equally to the polarization

preprint2015arXiv

Fröhlich electron-phonon vertex from first principles

We develop a method for calculating the electron-phonon vertex in polar semiconductors and insulators from first principles. The present formalism generalizes the Fröhlich vertex to the case of anisotropic materials and multiple phonon branches, and can be used either as a post-processing correction to standard electron-phonon calculations, or in conjunction with {\it ab initio} interpolation based on maximally localized Wannier functions. We demonstrate this formalism by investigating the electron-phonon interactions in anatase TiO$_2$, and show that the polar vertex significantly reduces the electron lifetimes and enhances the anisotropy of the coupling. The present work enables {\it ab initio} calculations of carrier mobilities, lifetimes, mass enhancement, and pairing in polar materials.

preprint2015arXiv

Spectral Fingerprints of Electron-Plasmon Coupling

We investigate the spectroscopic fingerprints of electron-plasmon coupling in integrated (PES) and angle-resolved photoemission spectroscopy (ARPES). To account for electron-plasmon interactions at a reduced computational cost, we derived the plasmonic polaron model, an approach based on the cumulant expansion of many-body perturbation theory that circumvents the calculation of the GW self-energy. Through the plasmonic polaron model, we predict the complete spectral functions and the effects of electron-plasmon coupling for Si, Ge, GaAs, and diamond. Si, Ge, and GaAs exhibit well-defined plasmonic polaron band structures, i.e., broadened replica of the valence bands redshifted by the plasmon energy. Based on these results, (i) we assign the structures of the plasmon satellite of silicon (as revealed by PES experiments) to plasmonic Van Hove singularities occurring at the L, $Ω$, and X high-symmetry points and (ii) we predict the ARPES signatures of electron-plasmon coupling for Si, Ge, GaAs, and diamond. Overall, the concept of plasmonic polaron bands emerges as a new paradigm for the interpretation of electronic processes in condensed matter, and the theoretical approach presented here provides a computationally affordable tool to explore its effect in a broad set of materials.

preprint2015arXiv

Stochastic approach to phonon-assisted optical absorption

We develop a first-principles theory of phonon-assisted optical absorption in semiconductors and insulators which incorporates the temperature dependence of the electronic structure. We show that the Hall-Bardeen-Blatt theory of indirect optical absorption and the Allen-Heine theory of temperature-dependent band structures can be derived from the present formalism by retaining only one-phonon processes. We demonstrate this method by calculating the optical absorption coefficient of silicon using an importance sampling Monte Carlo scheme, and we obtain temperature-dependent lineshapes and band gaps in good agreement with experiment. The present approach opens the way to predictive calculations of the optical properties of solids at finite temperature.

preprint2014arXiv

First-principles study of multiferroic RbFe(MoO$_4$)$_2$

We have investigated the magnetic structure and ferroelectricity in RbFe(MoO$_4$)$_2$ via first-principles calculations. Phenomenological analyses have shown that ferroelectricity may arise due to both the triangular chirality of the magnetic structure, and through coupling between the magnetic helicity and the ferroaxial structural distortion. Indeed, it was recently proposed that the structural distortion plays a key role in stabilising the chiral magnetic structure itself. We have determined the relative contribution of the two mechanisms via \emph{ab-initio} calculations. Whilst the structural axiality does induce the magnetic helix by modulating the symmetric exchange interactions, the electric polarization is largely due to the in-plane spin triangular chirality, with both electronic and ionic contributions being of relativistic origin. At the microscopic level, we interpret the polarization as a secondary steric consequence of the inverse Dzyaloshinskii-Moriya mechanism and accordingly explain why the ferroaxial component of the electric polarization must be small.

preprint2014arXiv

GW quasiparticle band gap of the hybrid organic-inorganic perovskite CH$_3$NH$_3$PbI$_3$: Effect of spin-orbit interaction, semicore electrons, and self-consistency

We study the quasiparticle band gap of the hybrid organic-inorganic lead halide perovskite CH$_3$NH$_3$PbI$_3$, using many-body perturbation theory based on the $GW$ approximation. We perform a systematic analysis of the band gap sensitivity to relativistic spin-orbit effects, to the description of semicore Pb-5$d$ and I-4$d$ electrons, and to the starting Kohn-Sham eigenvalues. We find that the inclusion of semicore states increases the calculated band gap by 0.2 eV, and self-consistency on the quasiparticle eigenvalues using a scissor correction increases the band gap by 0.4 eV with respect to the $G_0W_0$ result. These findings allow us to resolve an inconsistency between previously reported $GW$ calculations for CH$_3$NH$_3$PbI$_3$. Our most accurate band gap is 1.65 eV, and is in good agreement with the measured optical gap after considering a small excitonic shift as determined in experiments.

preprint2014arXiv

Steric engineering of metal-halide perovskites with tunable optical band gaps

Owing to their high energy-conversion efficiency and inexpensive fabrication routes, solar cells based on metal-organic halide perovskites have rapidly gained prominence as a disruptive technology. An attractive feature of perovskite absorbers is the possibility of tailoring their properties by changing the elemental composition through the chemical precursors. In this context, rational in silico design represents a powerful tool for mapping the vast materials landscape and accelerating discovery. Here we show that the optical band gap of metal-halide perovskites, a key design parameter for solar cells, strongly correlates with a simple structural feature, the largest metal-halide-metal bond angle. Using this descriptor we suggest continuous tunability of the optical gap from the mid-infrared to the visible. Precise band gap engineering is achieved by controlling the bond angles through the steric size of the molecular cation. Based on these design principles we predict novel low-gap perovskites for optimum photovoltaic efficiency, and we demonstrate the concept of band gap modulation by synthesising and characterising novel mixed-cation perovskites.

preprint2014arXiv

Two-gap superconductivity in heavily n-doped graphene: ab initio Migdal-Eliashberg theory

Graphene is the only member of the carbon family from zero- to three-dimensional materials for which superconductivity has not been observed yet. At this time, it is not clear whether the quest for superconducting graphene is hindered by technical challenges, or else by the fluctuation of the order parameter in two dimensions. In this area, ab initio calculations are useful to guide experimental efforts by narrowing down the search space. In this spirit, we investigate from first principles the possibility of inducing superconductivity in doped graphene using the fully anisotropic Migdal-Eliashberg theory powered by Wannier-Fourier interpolation. To address a best-case scenario, we consider both electron and hole doping at high carrier densities, so as to align the Fermi level to a van Hove singularity. In these conditions, we find superconducting gaps of $s$-wave symmetry, with a slight anisotropy induced by the trigonal warping, and, in the case of $n$-doped graphene, an unexpected two-gap structure reminiscent of MgB$_2$. Our Migdal-Eliashberg calculations suggest that the observation of superconductivity at low temperature should be possible for $n$-doped graphene at carrier densities exceeding $10^{15}$ cm$^{-2}$.

preprint2013arXiv

GW quasiparticle band structures of stibnite, antimonselite, bismuthinite, and guanajuatite

We present first-principles calculations of the quasiparticle band structures of four isostructural semiconducting metal chalcogenides A$_2$B$_3$ (with A = Sb, Bi and B = S, Se) of the stibnite family within the G$_0$W$_0$ approach. We perform extensive convergence tests and identify a sensitivity of the quasiparticle corrections to the structural parameters and to the semicore $d$ electrons. Our calculations indicate that all four chalcogenides exhibit direct band gaps, if we exclude some indirect transitions marginally below the direct gap. Relativistic spin-orbit effects are evaluated for the Kohn-Sham band structures, and included as scissor corrections in the quasiparticle band gaps. Our calculated band gaps are 1.5 eV (Sb$_2$S$_3$), 1.3 eV (Sb$_2$Se$_3$), 1.4 eV (Bi$_2$S$_3$) and 0.9 eV (Bi$_2$Se$_3$). By comparing our calculated gaps with the ideal Shockley-Queisser value we find that all four chalcogenides are promising as light sensitizers for nanostructured photovoltaics.

preprint2012arXiv

Dielectric screening in extended systems using the self-consistent Sternheimer equation and localized basis sets

We develop a first-principles computational method for investigating the dielectric screening in extended systems using the self-consistent Sternheimer equation and localized non-orthogonal basis sets. Our approach does not require the explicit calculation of unoccupied electronic states, only uses two-center integrals, and has a theoretical scaling of order O(N^3). We demonstrate this method by comparing our calculations for silicon, germanium, diamond, and LiCl with reference planewaves calculations. We show that accuracy comparable to planewaves calculations can be achieved via a systematic optimization of the basis set.

preprint2012arXiv

First-principles investigation of hyperfine interactions for nuclear spin entanglement in photo-excited fullerenes

The study of hyperfine interactions in optically excited fullerenes has recently acquired importance within the context of nuclear spin entanglement for quantum information technology. We here report a first-principles pseudopotential study of the hyperfine coupling parameters of optically excited fullerene derivatives as well as small organic radicals. The calculations are performed within the gauge-invariant projector-augmented wave method [C. Pickard and F. Mauri, Phys. Rev. B. 63, 245101 (2001)]. In order to establish the accuracy of this methodology we compare our results with all-electron calculations and with experiment. In the case of fullerene derivatives we study the hyperfine coupling in the spin-triplet exciton state and compare our calculations with recent electron paramagnetic resonance measurements [M. Schaffry et al., Phys. Rev. Lett. 104, 200501 (2010)]. We discuss our results in light of a recent proposal for entangling remote nuclear spins in photo-excited chromophores.

preprint2012arXiv

GW quasiparticle bandgaps of anatase TiO2 starting from DFT+U

We investigate the quasiparticle band structure of anatase TiO2, a wide gap semiconductor widely employed in photovoltaics and photocatalysis. We obtain GW quasiparticle energies starting from density-functional theory (DFT) calculations including Hubbard U corrections. Using a simple iterative procedure we determine the value of the Hubbard parameter yielding a vanishing quasiparticle correction to the fundamental band gap of anatase TiO2. The band gap (3.3 eV) calculated using this optimal Hubbard parameter is smaller than the value obtained by applying many-body perturbation theory to standard DFT eigenstates and eigenvalues (3.7 eV). We extend our analysis to the rutile polymorph of TiO2 and reach similar conclusions. Our work highlights the role of the starting non-interacting Hamiltonian in the calculation of GW quasiparticle energies in TiO2, and suggests an optimal Hubbard parameter for future calculations.

preprint2012arXiv

Performance of local orbital basis sets in the self-consistent Sternheimer method for dielectric matrices of extended systems

We present a systematic study of the performance of numerical pseudo-atomic orbital basis sets in the calculation of dielectric matrices of extended systems using the self-consistent Sternheimer approach of [F. Giustino et al., Phys. Rev. B 81 (11), 115105 (2010)]. In order to cover a range of systems, from more insulating to more metallic character, we discuss results for the three semiconductors diamond, silicon, and germanium. Dielectric matrices calculated using our method fall within 1-3% of reference planewaves calculations, demonstrating that this method is promising. We find that polarization orbitals are critical for achieving good agreement with planewaves calculations, and that only a few additional ζ's are required for obtaining converged results, provided the split norm is properly optimized. Our present work establishes the validity of local orbital basis sets and the self-consistent Sternheimer approach for the calculation of dielectric matrices in extended systems, and prepares the ground for future studies of electronic excitations using these methods.

preprint2012arXiv

Ultrafast entangling gates between nuclear spins using photo-excited triplet states

The representation of information within the spins of electrons and nuclei has been powerful in the ongoing development of quantum computers. Although nuclear spins are advantageous as quantum bits (qubits) due to their long coherence lifetimes (exceeding seconds), they exhibit very slow spin interactions and have weak polarisation. A coupled electron spin can be used to polarise the nuclear spin and create fast single-qubit gates, however, the permanent presence of electron spins is a source of nuclear decoherence. Here we show how a transient electron spin, arising from the optically excited triplet state of C60, can be used to hyperpolarise, manipulate and measure two nearby nuclear spins. Implementing a scheme which uses the spinor nature of the electron, we performed an entangling gate in hundreds of nanoseconds: five orders of magnitude faster than the liquid-state J coupling. This approach can be widely applied to systems comprising an electron spin coupled to multiple nuclear spins, such as NV centres, while the successful use of a transient electron spin motivates the design of new molecules able to exploit photo-excited triplet states.

preprint2011arXiv

Hydrogen-bonded supramolecular assembly of dyes at nanostructured solar cell interfaces

We calculate from first principles the O1s core-level shifts for a variety of atomistic models of the interface between TiO2 and the dye N3 found in dye-sensitized solar cells. A systematic comparison between our calculations and published photoemission data shows that only interface models incorporating hydrogen bonding between the dyes are compatible with experiment. Based on our analysis we propose that at the TiO2/N3 interface the dyes are arranged in supramolecular assemblies. Our work opens a new direction in the modeling of semiconductor/dye interfaces and bears on the design of more efficient nanostructured solar cells.

preprint2010arXiv

Angle-resolved photoemission spectra of graphene from first-principles calculations

Angle-resolved photoemission spectroscopy (ARPES) is a powerful experimental technique for directly probing electron dynamics in solids. The energy vs. momentum dispersion relations and the associated spectral broadenings measured by ARPES provide a wealth of information on quantum many-body interaction effects. In particular, ARPES allows studies of the Coulomb interaction among electrons (electron-electron interactions) and the interaction between electrons and lattice vibrations (electron-phonon interactions). Here, we report ab initio simulations of the ARPES spectra of graphene including both electron-electron and electron-phonon interactions on the same footing. Our calculations reproduce some of the key experimental observations related to many-body effects, including the indication of a mismatch between the upper and lower halves of the Dirac cone.

preprint2010arXiv

Entangling remote nuclear spins linked by a chromophore

Molecular nanostructures may constitute the fabric of future quantum technologies, if their degrees of freedom can be fully harnessed. Ideally one might use nuclear spins as low-decoherence qubits and optical excitations for fast controllable interactions. Here, we present a method for entangling two nuclear spins through their mutual coupling to a transient optically-excited electron spin, and investigate its feasibility through density functional theory and experiments on a test molecule. From our calculations we identify the specific molecular properties that permit high entangling power gates under simple optical and microwave pulses; synthesis of such molecules is possible with established techniques.

preprint2010arXiv

EPW: A program for calculating the electron-phonon coupling using maximally localized Wannier functions

EPW (Electron-Phonon coupling using Wannier functions) is a program written in FORTRAN90 for calculating the electron-phonon coupling in periodic systems using density-functional perturbation theory and maximally-localized Wannier functions. EPW can calculate electron-phonon interaction self-energies, electron-phonon spectral functions, and total as well as mode-resolved electron-phonon coupling strengths. The calculation of the electron-phonon coupling requires a very accurate sampling of electron-phonon scattering processes throughout the Brillouin zone, hence reliable calculations can be prohibitively time-consuming. EPW combines the Kohn-Sham electronic eigenstates and the vibrational eigenmodes provided by the Quantum-ESPRESSO package [1] with the maximally localized Wannier functions provided by the wannier90 package [2] in order to generate electron-phonon matrix elements on arbitrarily dense Brillouin zone grids using a generalized Fourier interpolation. This feature of EPW leads to fast and accurate calculations of the electron-phonon coupling, and enables the study of the electron-phonon coupling in large and complex systems.

preprint2009arXiv

GW method with the self-consistent Sternheimer equation

We propose a novel approach to quasiparticle GW calculations which does not require the computation of unoccupied electronic states. In our approach the screened Coulomb interaction is evaluated by solving self-consistent linear-response Sternheimer equations, and the noninteracting Green's function is evaluated by solving inhomogeneous linear systems. The frequency-dependence of the screened Coulomb interaction is explicitly taken into account. In order to avoid the singularities of the screened Coulomb interaction the calculations are performed along the imaginary axis, and the results are analytically continued to the real axis through Pade' approximants. As a proof of concept we implemented the proposed methodology within the empirical pseudopotential formalism and we validated our implementation using silicon as a test case. We examine the advantages and limitations of our method and describe promising future directions.