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Federico Bisti

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el cond-mat.other

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preprint2022arXiv

Can the "shadow" of graphene band clarify its flatness?

Graphene band renormalization at the proximity of the van Hove singularity (VHS) has been investigated by angle-resolved photoemission spectroscopy (ARPES) on the Li-doped quasi-freestanding graphene on the cobalt (0001) surface. The absence of graphene band hybridization with the substrate, the doping contribution well represented by a rigid energy shift and the excellent electron-electron interaction screening ensured by the metallic substrate offer a privileged point of view for such investigation. A clear ARPES signal is detected along the M point of the graphene Brillouin zone, giving rise to an apparent flattened band. By simulating the graphene spectral function from the density functional theory calculated bands, we demonstrate that the photoemission signal along the M point originates from the "shadow" of the spectral function of the unoccupied band above the Fermi level. Such interpretation put forward the absence of any additional strong correlation effects at the VHS proximity, reconciling the mean field description of the graphene band structure even in the highly doped scenario.

preprint2022arXiv

Evidence for Highly p-type doping and type II band alignment in large scale monolayer WSe2 /Se-terminated GaAs heterojunction grown by Molecular beam epitaxy

Two-dimensional materials (2D) arranged in hybrid van der Waals (vdW) heterostructures provide a route toward the assembly of 2D and conventional III-V semiconductors. Here, we report the structural and electronic properties of single layer WSe2 grown by molecular beam epitaxy on Se-terminated GaAs(111)B. Reflection high-energy electron diffraction images exhibit sharp streaky features indicative of a high-quality WSe2 layer produced via vdW epitaxy. This is confirmed by in-plane x-ray diffraction. The single layer of WSe2 and the absence of interdiffusion at the interface are confirmed by high resolution X-ray photoemission spectroscopy and high-resolution transmission microscopy. Angle-resolved photoemission investigation revealed a well-defined WSe2 band dispersion and a high p-doping coming from the charge transfer between the WSe2 monolayer and the Se-terminated GaAs substrate. By comparing our results with local and hybrid functionals theoretical calculation, we find that the top of the valence band of the experimental heterostructure is close to the calculations for free standing single layer WSe2. Our experiments demonstrate that the proximity of the Se-terminated GaAs substrate can significantly tune the electronic properties of WSe2. The valence band maximum (VBM, located at the K point of the Brillouin zone) presents an upshifts of about 0.56 eV toward the Fermi level with respect to the VBM of WSe2 on graphene layer, which is indicative of high p-type doping and a key feature for applications in nanoelectronics and optoelectronics.

preprint2020arXiv

Electron-polaron dichotomy of charge carriers in perovskite oxides

Many transition metal oxides (TMOs) are Mott insulators due to strong Coulomb repulsion between electrons, and exhibit metal-insulator transitions (MITs) whose mechanisms are not always fully understood. Unlike most TMOs, minute doping in CaMnO3 induces a metallic state without any structural transformations. This material is thus an ideal platform to explore band formation through the MIT. Here, we use angle-resolved photoemission spectroscopy to visualize how electrons delocalize and couple to phonons in CaMnO3. We show the development of a Fermi surface where mobile electrons coexist with heavier carriers, strongly coupled polarons. The latter originate from a boost of the electron-phonon interaction (EPI). This finding brings to light the role that the EPI can play in MITs even caused by purely electronic mechanisms. Our discovery of the EPI-induced dichotomy of the charge carriers explains the transport response of Ce-doped CaMnO3 and suggests strategies to engineer quantum matter from TMOs.

preprint2016arXiv

Band Structure of EuO/Si Spin Contact: Justification for Silicon Spintronics

Silicon spintronics requires injection of spin-polarized carriers into Si. An emerging approach is direct electrical injection from a ferromagnetic semiconductor - EuO being the prime choice. Functionality of the EuO/Si spin contact is determined by the interface band alignment. In particular, the band offset should fall within the 0.5-2 eV range. We employ soft-X-ray ARPES to probe the electronic structure of the buried EuO/Si interface with momentum resolution and chemical specificity. The band structure reveals a conduction band offset of 1.0 eV attesting the technological potential of the EuO/Si system.