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Researcher profile

Farhan Rana

Farhan Rana contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hallphysics.app-ph

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Published work

4 published item(s)

preprint2022arXiv

Antiferromagnetic Spin Orientation and Magnetic Domain Structure in Epitaxially Grown MnN Studied using Optical Second Harmonic Generation

MnN is a centrosymmetric collinear antiferromagnet belonging to the transition metal nitride family with a high Neel temperature, a low anisotropy field, and a large magnetic moment per Mn atom. Despite several recent experimental and theoretical studies, the spin symmetry (magnetic point group) and magnetic domain structure of the material remain unknown. In this work, we use optical second harmonic generation (SHG) to study the magnetic structure of thin epitaxially-grown single-crystal (001) MnN films. Our work shows that spin moments in MnN are tilted away from the [001] direction and the components of the spin moments in the (001) plane are aligned along one of the two possible in-plane symmetry axes ([100] or [110]) resulting in a magnetic point group symmetry of 2/m1'. Our work rules out magnetic point group symmetries 4/mmm1' and mmm1' that have been previously discussed in the literature. Four different spin domains consistent with the 2/m1' magnetic point group symmetry are possible in MnN. A statistical model based on the observed variations in the polarization-dependent intensity of the second harmonic signal collected over large sample areas puts an upper bound of 0.65 microns on the mean domain size. Our results show that SHG can be used to probe the magnetic order in metallic antiferromagnets. This work is expected to contribute to the recent efforts in using antiferromagnets for spintronic applications.

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preprint2021arXiv

Many-body theory of radiative lifetimes of exciton-trion superposition states in doped two-dimensional materials

Optical absorption and emission spectra of doped two-dimensional (2D) materials exhibit sharp peaks that are often identified with pure excitons and pure trions (or charged excitons), but both peaks have been recently attributed to superpositions of 2-body exciton and 4-body trion states and correspond to the approximate energy eigenstates in doped 2D materials. In this paper, we present the radiative lifetimes of these exciton-trion superposition energy eigenstates using a many-body formalism that is appropriate given the many-body nature of the strongly coupled exciton and trion states in doped 2D materials. Whereas the exciton component of these superposition eigenstates are optically coupled to the material ground state, and can emit a photon and decay into the material ground state provided the momentum of the eigenstate is within the light cone, the trion component is optically coupled only to the excited states of the material and can emit a photon even when the momentum of the eigenstate is outside the light cone. In an electron-doped 2D material, when a 4-body trion state with momentum outside the light cone recombines radiatively, and a photon is emitted with a momentum inside the light cone, the excess momentum is taken by an electron-hole pair left behind in the conduction band. The radiative lifetimes of the exciton-trion superposition states, with momenta inside the light cone, are found to be in the few hundred femtoseconds to a few picoseconds range and are strong functions of the doping density. The radiative lifetimes of exciton-trion superposition states, with momenta outside the light cone, are in the few hundred picoseconds to a few nanoseconds range and are again strongly dependent on the doping density.

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preprint2020arXiv

A Many-Body Theory of the Optical Conductivity of Excitons and Trions in Two-Dimensional Materials

The optical spectra of two dimensional (2D) materials exhibit sharp absorption peaks that are commonly identified with exciton and trions (or charged excitons). In this paper, we show that excitons and trions in doped 2D materials can be described by two coupled Schrodinger-like equations - one two-body equation for excitons and another four-body equation for trions. In electron doped 2D materials, a bound trion state is identified with a four-body bound state of an exciton and an excited conduction band electron-hole pair. In doped 2D materials, the exciton and the trions states are the not the eigenstates of the full Hamiltonian and their respective Schrodinger equations are coupled due to Coulomb interactions. The strength of this coupling increases with the doping density. Solutions of these two coupled equations can quantitatively explain all the prominent features experimentally observed in the optical absorption spectra of 2D materials including the observation of two prominent absorption peaks and the variation of their energy splittings and spectral shapes and strengths with the electron density. The optical conductivity obtained in our work satisfies the optical conductivity sum rule exactly. A superposition of exciton and trion states can be used to construct a solution of the two coupled Schrodinger equations and this solution resembles the variational exciton-polaron state, thereby establishing the relationship between our approach and Fermi polaron physics.

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preprint2020arXiv

Intra- and Inter-Conduction Band Optical Absorption Processes in $β$-Ga$_2$O$_3$

$β$-Ga$_2$O$_3$ is an ultra-wide bandgap semiconductor and is thus expected to be optically transparent to light of sub-bandgap wavelengths well into the ultraviolet. Contrary to this expectation, it is found here that free electrons in n-doped $β$-Ga$_2$O$_3$ absorb light from the IR to the UV wavelength range via intra- and inter-conduction band optical transitions. Intra-conduction band absorption occurs via an indirect optical phonon mediated process with a $1/ω^{3}$ dependence in the visible to near-IR wavelength range. This frequency dependence markedly differs from the $1/ω^{2}$ dependence predicted by the Drude model of free-carrier absorption. The inter-conduction band absorption between the lowest conduction band and a higher conduction band occurs via a direct optical process at $λ\sim 349$ nm (3.55 eV). Steady state and ultrafast optical spectroscopy measurements unambiguously identify both these absorption processes and enable quantitative measurements of the inter-conduction band energy, and the frequency dependence of absorption. Whereas the intra-conduction band absorption does not depend on light polarization, inter-conduction band absorption is found to be strongly polarization dependent. The experimental observations, in excellent agreement with recent theoretical predictions for $β$-Ga$_2$O$_3$, provide important limits of sub-bandgap transparency for optoelectronics in the deep-UV to visible wavelength range, and are also of importance for high electric field transport effects in this emerging semiconductor.

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