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Changjian Zhang

Changjian Zhang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

7 published item(s)

preprint2015arXiv

Radiative Lifetimes of Excitons and Trions in Monolayers of Metal Dichalcogenide MoS2

We present results on the radiative lifetimes of excitons and trions in a monolayer of metal dichalcogenide MoS2. The small exciton radius and the large exciton optical oscillator strength result in radiative lifetimes in the 0.18-0.30 ps range for excitons that have small in-plane momenta and couple to radiation. Average lifetimes of thermally distributed excitons depend linearly on the exciton temperature and can be in the few picoseconds range at small temperatures and more than a nanosecond near room temperature. Localized excitons exhibit lifetimes in the same range and the lifetime increases as the localization length decreases. The radiative lifetimes of trions are in the hundreds of picosecond range and increase with the increase in the trion momentum. Average lifetimes of thermally distributed trions increase with the trion temperature as the trions acquire thermal energy and larger momenta. We expect our theoretical results to be applicable to most other 2D transition metal dichalcogenides.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Surface Recombination Limited Lifetimes of Photoexcited Carriers in Few-Layer Transition Metal Dichalcogenide MoS2

We present results on photoexcited carrier lifetimes in few-layer transition metal dichalcogenide MoS2 using nondegenerate ultrafast optical pump-probe technique. Our results show a sharp increase of the carrier lifetimes with the number of layers in the sample. Carrier lifetimes increase from few tens of picoseconds in monolayer samples to more than a nanosecond in 10-layer samples. The inverse carrier lifetime was found to scale according to the probability of the carriers being present at the surface layers, as given by the carrier wavefunction in few layer samples, which can be treated as quantum wells. The carrier lifetimes were found to be largely independent of the temperature and the inverse carrier lifetimes scaled linearly with the photoexcited carrier density. These observations are consistent with defect-assisted carrier recombination, in which the capture of electrons and holes by defects occurs via Auger scatterings. Our results suggest that carrier lifetimes in few-layer samples are surface recombination limited due to the much larger defect densities at the surface layers compared to the inner layers.

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preprint2015arXiv

Ultrafast Response of Monolayer Molybdenum Disulfide (MoS2) Photodetectors

The strong light emission and absorption exhibited by single atomic layer transitional metal dichalcogenides in the visible to near-infrared wavelength range makes them attractive for optoelectronic applications. In this work, using two-pulse photovoltage correlation technique, we show that monolayer molybdenum disulfide photodetector can have intrinsic response times as short as 3 ps implying photodetection bandwidths as wide as 300 GHz. The fast photodetector response is a result of the short electron-hole and exciton lifetimes in this material. Recombination of photoexcited carriers in most two-dimensional metal dichalcogenides is dominated by non-radiative processes, most notable among which is Auger scattering. The fast response time, and the ease of fabrication of these devices, make them interesting for low-cost ultrafast optical communication links.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Absorption of Light by Excitons and Trions in Monolayers of Metal Dichalcogenide MoS$_{2}$: Experiments and Theory

We measure the optical absorption spectra and optical conductivities of excitons and trions in monolayers of metal dichalcogenide MoS$_{2}$ and compare the results with theoretical models. Our results show that the Wannier-Mott model for excitons, with modifications to account for small exciton radii and large exciton relative wavefunction spread in momentum space, phase space blocking due to Pauli exclusion in doped materials, and wavevector dependent dielectric constant, gives results that agree well with experiments. The measured exciton optical absorption spectra are used to obtain experimental estimates for the exciton radii that fall in the $7-10Å$ range and agree well with theory. The measured trion optical absorption spectra are used to obtain values for the trion radii that also agree well with theory. The measured values of the exciton and trion radii correspond to binding energies that are in good agreement with values obtained from first principles calculations.

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preprint2014arXiv

Fast Exciton Annihilation by Capture of Electrons or Holes by Defects via Auger Scattering in Monolayer Metal Dichalcogenides

The strong Coulomb interactions and the small exciton radii in two-dimensional metal dichalcogenides can result in very fast capture of electrons and holes of excitons by mid-gap defects from Auger processes. In the Auger processes considered here, an exciton is annihilated at a defect site with the capture of the electron (or the hole) by the defect and the hole (or the electron) is scattered to a high energy. In the case of excitons, the probability of finding an electron and a hole near each other is enhanced many folds compared to the case of free uncorrelated electrons and holes. Consequently, the rate of carrier capture by defects from Auger scattering for excitons in metal dichalcogenides can be 100-1000 times larger than for uncorrelated electrons and holes for carrier densities in the $10^{11}$-$10^{12}$ cm$^{-2}$ range. We calculate the capture times of electrons and holes by defects and show that the capture times can be in the sub-picosecond to a few picoseconds range. The capture rates exhibit linear as well as quadratic dependence on the exciton density. These fast time scales agree well with the recent experimental observations, and point to the importance of controlling defects in metal dichalcogenides for optoelectronic applications.

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preprint2014arXiv

Temperature Renormalization of Optical Spectra of Monolayer MoS2

Newly measured optical absorption and photoluminescence spectra reveal substantial frequency shifts of both exciton and trion peaks as monolayer MoS2 is cooled from 363 K to 4 K. First-principles simulations using the GW-Bethe-Salpeter Equation approach satisfactorily reproduce these frequency shifts by incorporating many-electron interactions and the thermal expansion of the in-plane lattice constant. Studying these temperature effects in monolayer MoS2 is crucial for rectifying the results of room-temperature experiments with the previous predictions of zero-temperature-limit simulations. Moreover, we estimate that the thermal expansion coefficient of monolayer MoS2 is around 25% less than that of bulk counterpart by tracking the frequency shifts of the exciton or trion peaks in optical spectra. This may serve as a convenient way to estimate thermal expansion coefficients of general two-dimensional chalcogenides.

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preprint2014arXiv

Ultrafast Dynamics of Defect-Assisted Electron-Hole Recombination in Monolayer MoS2

In this letter, we present non-degenerate ultrafast optical pump-probe studies of the carrier recombination dynamics in MoS$_{2}$ monolayers. By tuning the probe to wavelengths much longer than the exciton line, we make the probe transmission sensitive to the total population of photoexcited electrons and holes. Our measurement reveals two distinct time scales over which the photoexcited electrons and holes recombine; a fast time scale that lasts $\sim$2 ps and a slow time scale that lasts longer than $\sim$100 ps. The temperature and the pump fluence dependence of the observed carrier dynamics are consistent with defect-assisted recombination as being the dominant mechanism for electron-hole recombination in which the electrons and holes are captured by defects via Auger processes. Strong Coulomb interactions in two dimensional atomic materials, together with strong electron and hole correlations in two dimensional metal dichalcogenides, make Auger processes particularly effective for carrier capture by defects. We present a model for carrier recombination dynamics that quantitatively explains all features of our data for different temperatures and pump fluences. The theoretical estimates for the rate constants for Auger carrier capture are in good agreement with the experimentally determined values. Our results underscore the important role played by Auger processes in two dimensional atomic materials.

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