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Researcher profile

Fang-Cheng Chou

Fang-Cheng Chou contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.dis-nncond-mat.mtrl-scicond-mat.str-elcond-mat.supr-conphysics.app-ph

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Published work

4 published item(s)

preprint2020arXiv

Electron-Electron Interactions in 2D Semiconductor InSe

Electron-electron interactions (EEIs) in 2D van der Waals structures is one of the topics with high current interest in physics. We report the observation of a negative parabolic magnetoresistance (MR) in multilayer 2D semiconductor InSe beyond the low-field weak localization/antilocalization regime, and provide evidence for the EEI origin of this MR behavior. Further, we analyze this negative parabolic MR and other observed quantum transport signatures of EEIs (temperature dependent conductance and Hall coefficient) within the framework of Fermi liquid theory and extract the gate voltage tunable Fermi liquid parameter $F_0^σ$ which quantifies the electron spin-exchange interaction strength.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Ultralow Schottky Barriers in hBN-Encapsulated Monolayer WSe$_2$ Tunnel Field-Effect Transistors

To explore the potential of field-effect transistors (FETs) based on monolayers of the two-dimensional semiconducting channel(SC) for spintronics, the two most important issues are to ensure the formation of variable low resistive tunnel ferromagnetic contacts(FC), and to preserve intrinsic properties of the SC during fabrication. Large Schottky barriers lead to the formation of high resistive contacts and methods adopted to control the barriers often alter the intrinsic properties of the SC. This work aims at addressing both issues in fully encapsulated monolayer WSe$_2$ FETs by using bi-layer h-BN as a tunnel barrier at the FC/SC interface. We investigate the electrical transport in monolayer WSe$_2$ FETs with current-in-plane geometry that yields hole mobilities $\sim$ 38.3 $cm^{2}V^{-1}s^{-1}$ at 240 K and On/Off ratios of the order of 10$^7$, limited by the contact regions. We have achieved ultralow effective Schottky barrier ($\sim$ 5.34 meV) with encapsulated tunneling device as opposed to a non-encapsulated device in which the barrier heights are considerably higher. These observations provide an insight into the electrical behavior of the FC/h-BN/SC/h-BN heterostructures and such control over the barrier heights opens up the possibilities for WSe$_2$-based spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Field-free platform for topological zero-energy mode in superconductors LiFeAs and PbTaSe$_2$

Superconducting materials exhibiting topological properties are emerging as an exciting platform to realize fundamentally new excitations from topological quantum states of matter. In this work, we explore the possibility of a field-free platform for generating Majorana zero energy excitations by depositing magnetic Fe impurities on the surface of candidate topological superconductors, LiFeAs and PbTaSe$_2$. We use scanning tunneling microscopy to probe localized states induced at the Fe adatoms on the atomic scale and at sub-Kelvin temperatures. We find that each Fe adatom generates a striking zero-energy bound state inside the superconducting gap, which do not split in magnetic fields up to 8T, underlining a nontrivial topological origin. Our findings point to magnetic Fe adatoms evaporated on bulk superconductors with topological surface states as a new platform for exploring Majorana zero modes and quantum information science under field-free conditions.

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preprint2018arXiv

Tuning Rashba Spin-Orbit Coupling in Gated Multilayer InSe

Manipulating the electron spin with the aid of spin-orbit coupling (SOC) is an indispensable element of spintronics. Electrostatically gating a material with strong SOC results in an effective magnetic field which can in turn be used to govern the electron spin. In this work, we report the existence and electrostatic tunability of Rashba SOC in multilayer InSe. We observed a gate-voltage-tuned crossover from weak localization (WL) to weak antilocalization (WAL) effect in quantum transport studies of InSe, which suggests an increasing SOC strength. Quantitative analyses of magneto-transport studies and energy band diagram calculations provide strong evidence for the predominance of Rashba SOC in electrostatically gated InSe. Furthermore, we attribute the tendency of the SOC strength to saturate at high gate voltages to the increased electronic density of states-induced saturation of the electric field experienced by the electrons in the InSe layer. This explanation of nonlinear gate voltage control of Rashba SOC can be generalized to other electrostatically gated semiconductor nanomaterials in which a similar tendency of spin-orbit length saturation was observed (e.g. nanowire field effect transistors), and is thus of broad implications in spintronics. Identifying and controlling the Rashba SOC in InSe may serve pivotally in devising III-VI semiconductor-based spintronic devices in the future.

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