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Raman Sankar

Raman Sankar appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.supr-concond-mat.mtrl-scicond-mat.str-elcond-mat.dis-nnphysics.app-ph

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Published work

19 published item(s)

preprint2020arXiv

Electron-Electron Interactions in 2D Semiconductor InSe

Electron-electron interactions (EEIs) in 2D van der Waals structures is one of the topics with high current interest in physics. We report the observation of a negative parabolic magnetoresistance (MR) in multilayer 2D semiconductor InSe beyond the low-field weak localization/antilocalization regime, and provide evidence for the EEI origin of this MR behavior. Further, we analyze this negative parabolic MR and other observed quantum transport signatures of EEIs (temperature dependent conductance and Hall coefficient) within the framework of Fermi liquid theory and extract the gate voltage tunable Fermi liquid parameter $F_0^σ$ which quantifies the electron spin-exchange interaction strength.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Ultralow Schottky Barriers in hBN-Encapsulated Monolayer WSe$_2$ Tunnel Field-Effect Transistors

To explore the potential of field-effect transistors (FETs) based on monolayers of the two-dimensional semiconducting channel(SC) for spintronics, the two most important issues are to ensure the formation of variable low resistive tunnel ferromagnetic contacts(FC), and to preserve intrinsic properties of the SC during fabrication. Large Schottky barriers lead to the formation of high resistive contacts and methods adopted to control the barriers often alter the intrinsic properties of the SC. This work aims at addressing both issues in fully encapsulated monolayer WSe$_2$ FETs by using bi-layer h-BN as a tunnel barrier at the FC/SC interface. We investigate the electrical transport in monolayer WSe$_2$ FETs with current-in-plane geometry that yields hole mobilities $\sim$ 38.3 $cm^{2}V^{-1}s^{-1}$ at 240 K and On/Off ratios of the order of 10$^7$, limited by the contact regions. We have achieved ultralow effective Schottky barrier ($\sim$ 5.34 meV) with encapsulated tunneling device as opposed to a non-encapsulated device in which the barrier heights are considerably higher. These observations provide an insight into the electrical behavior of the FC/h-BN/SC/h-BN heterostructures and such control over the barrier heights opens up the possibilities for WSe$_2$-based spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Wohlleben Effect and Emergent Pi junctions in superconducting Boron doped Diamond thin films

Diamond is an excellent band insulator. However, boron (B) doping is known to induce superconductivity. We present two interesting effects in superconducting B doped diamond (BDD) thin films: i) Wohlleben effect (paramagnetic Meissner effect, PME) and ii) a low field spin glass like susceptibility anomaly. We have performed electrical and magnetic measurements (under pressure in one sample) at dopings (1.4 , 2.6 and 3.6) X 1021 cm-3, in a temperature range 2 - 10 K. PME, a low field anomaly in inhomogeneous superconductors could arise from flux trapping, flux compression, or for non-trivial reason such as emergent Josephson Pi junctions. Joint occurrence of PME and spin glass type anomalies points to possible emergence of Pi junctions. BDD is a disordered s-wave superconductor; and Pi junctions could be produced by spin flip scattering of spin half moments when present at weak superconducting regions (Bulaevski et al. 1978). A frustrated network of 0 and Pi junctions will result (Kusmartsev et al. 1992) in a distribution of spontaneous equilibrium supercurrents, a phase glass state. Anderson localized spin half spinons embedded in a metallic fluid (two fluid model of Bhatt et al.) could create Pi junction by spin flip scattering. Our findings are consistent with presence of Pi junctions, invoked to explain their (Bhattacharyya et al.) observation of certain resistance anomaly in BDD.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Field-free platform for topological zero-energy mode in superconductors LiFeAs and PbTaSe$_2$

Superconducting materials exhibiting topological properties are emerging as an exciting platform to realize fundamentally new excitations from topological quantum states of matter. In this work, we explore the possibility of a field-free platform for generating Majorana zero energy excitations by depositing magnetic Fe impurities on the surface of candidate topological superconductors, LiFeAs and PbTaSe$_2$. We use scanning tunneling microscopy to probe localized states induced at the Fe adatoms on the atomic scale and at sub-Kelvin temperatures. We find that each Fe adatom generates a striking zero-energy bound state inside the superconducting gap, which do not split in magnetic fields up to 8T, underlining a nontrivial topological origin. Our findings point to magnetic Fe adatoms evaporated on bulk superconductors with topological surface states as a new platform for exploring Majorana zero modes and quantum information science under field-free conditions.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Tuning Rashba Spin-Orbit Coupling in Gated Multilayer InSe

Manipulating the electron spin with the aid of spin-orbit coupling (SOC) is an indispensable element of spintronics. Electrostatically gating a material with strong SOC results in an effective magnetic field which can in turn be used to govern the electron spin. In this work, we report the existence and electrostatic tunability of Rashba SOC in multilayer InSe. We observed a gate-voltage-tuned crossover from weak localization (WL) to weak antilocalization (WAL) effect in quantum transport studies of InSe, which suggests an increasing SOC strength. Quantitative analyses of magneto-transport studies and energy band diagram calculations provide strong evidence for the predominance of Rashba SOC in electrostatically gated InSe. Furthermore, we attribute the tendency of the SOC strength to saturate at high gate voltages to the increased electronic density of states-induced saturation of the electric field experienced by the electrons in the InSe layer. This explanation of nonlinear gate voltage control of Rashba SOC can be generalized to other electrostatically gated semiconductor nanomaterials in which a similar tendency of spin-orbit length saturation was observed (e.g. nanowire field effect transistors), and is thus of broad implications in spintronics. Identifying and controlling the Rashba SOC in InSe may serve pivotally in devising III-VI semiconductor-based spintronic devices in the future.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Superconducting Topological Surface States in Non-centrosymmetric Bulk Superconductor PbTaSe2

The search for topological superconductors (TSCs) is one of the most urgent contemporary problems in condensed matter systems. TSCs are characterized by a full superconducting gap in the bulk and topologically protected gapless surface (or edge) states. Within each vortex core of TSCs, there exist the zero energy Majorana bound states, which are predicted to exhibit non-Abelian statistics and to form the basis of the fault-tolerant quantum computation. So far, no stoichiometric bulk material exhibits the required topological surface states (TSSs) at Fermi level combined with fully gapped bulk superconductivity. Here, we report atomic scale visualization of the TSSs of the non-centrosymmetric fully-gapped superconductor, PbTaSe2. Using quasiparticle scattering interference (QPI) imaging, we find two TSSs with a Dirac point at E~1.0eV, of which the inner TSS and partial outer TSS cross Fermi level, on the Pb-terminated surface of this fully gapped superconductor. This discovery reveals PbTaSe2 as a promising candidate as a TSC.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Topological Dirac States and Pairing Correlations in the Non-Centrosymmetric Superconductor PbTaSe2

Superconductivity in topological band structures is a platform for many novel exotic quantum phenomena such as emergent supersymmetry. This potential nourishes the search for topological materials with intrinsic superconducting instabilities, in which Cooper pairing is introduced to electrons with helical spin texture such as the Dirac states of topological insulators and Dirac Semimetals, forming a natural topological superconductor of helical kind. We employ first-principles calculations, ARPES experiments and new theoretical analysis to reveal that PbTaSe2, a non-centrosymmetric superconductor, possesses a nonzero Z2 topological invariant and fully spin-polarized Dirac states. Moreover, we analyze the phonon spectrum of PbTaSe2 to show how superconductivity can emerge due to a stiffening of phonons by the Pb intercalation, which diminishes a competing charge-density-wave instability. Our work establishes PbTaSe2 as a stoichiometric superconductor with nontrivial Z2 topological band structure, and shows that it holds great promise for studying novel forms of topological superconductivity not realized previously.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Atomic Scale Visualization of Quantum Interference on a Weyl Semimetal Surface by Scanning Tunneling Microscopy/Spectroscopy

Weyl semimetals may open a new era in condensed matter physics, materials science and nanotech after graphene and topological insulators. We report the first atomic scale view of the surface states of a Weyl semimetal (NbP) using scanning tunneling microscopy/spectroscopy. We observe coherent quantum interference patterns that arise from the scattering of quasiparticles near point defects on the surface. The measurements reveal the surface electronic structure both below and above the chemical potential in both real and reciprocal spaces. Moreover, the interference maps uncover the scattering processes of NbP's exotic surface states. Through comparison between experimental data and theoretical calculations, we further discover that the scattering channels are largely restricted by the orbital and/or spin texture of the surface band. The visualization of the scattering processes can help design novel transport effects and electronics on the topological surface of a Weyl semimetal.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Doping effects on charge density instability in non-centrosymmetric PbxTaSe2

We report on the investigation of vibrational and electronic properties of the Pb doped dichalcogenide PbxTaSe2 using Raman scattering experiments. We observe a marked variation of the main vibrational modes with Pb concentration x. The concentration dependence of the vibrational modes resembles the dependence of the vibrational modes in TaSe2 on the number of crystallographic layers along the c axis direction [1]. The temperature and polarization dependence of Raman spectra of PbxTaSe2 revealed additional broad modes in the low frequency regime which are discussed in context of remnant charge density wave, induced disorder, or PbSe phase formed in the interface of Pb and TaSe2 layers.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electronic structure and relaxation dynamics in a superconducting topological material

Topological superconductors host new states of quantum matter which show a pairing gap in the bulk and gapless surface states providing a platform to realize Majorana fermions. Recently, alkaline-earth metal Sr intercalated Bi2Se3 has been reported to show superconductivity with a Tc ~ 3 K and a large shielding fraction. Here we report systematic normal state electronic structure studies of Sr0.06Bi2Se3 (Tc ~ 2.5 K) by performing photoemission spectroscopy. Using angle-resolved photoemission spectroscopy (ARPES), we observe a quantum well confined two-dimensional (2D) state coexisting with a topological surface state in Sr0.06Bi2Se3. Furthermore, our time-resolved ARPES reveals the relaxation dynamics showing different decay mechanism between the excited topological surface states and the two-dimensional states. Our experimental observation is understood by considering the intra-band scattering for topological surface states and an additional electron phonon scattering for the 2D states, which is responsible for the superconductivity. Our first-principles calculations agree with the more effective scattering and a shorter lifetime of the 2D states. Our results will be helpful in understanding low temperature superconducting states of these topological materials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Experimental discovery of a topological Weyl semimetal state in TaP

Weyl semimetals are expected to open up new horizons in physics and materials science because they provide the first realization of Weyl fermions and exhibit protected Fermi arc surface states. However, they had been found to be extremely rare in nature. Recently, a family of compounds, consisting of TaAs, TaP, NbAs and NbP was predicted as Weyl semimetal candidates. Here, we experimentally realize a Weyl semimetal state in TaP. Using photoemission spectroscopy, we directly observe the Weyl fermion cones and nodes in the bulk and the Fermi arcs on the surface. Moreover, we find that the surface states show an unexpectedly rich structure, including both topological Fermi arcs and several topologically-trivial closed contours in the vicinity of the Weyl points, which provides a promising platform to study the interplay between topological and trivial surface states on a Weyl semimetal's surface. We directly demonstrate the bulk-boundary correspondence and hence establish the topologically nontrivial nature of the Weyl semimetal state in TaP, by resolving the net number of chiral edge modes on a closed path that encloses the Weyl node. This also provides, for the first time, an experimentally practical approach to demonstrating a bulk Weyl fermion from a surface state dispersion measured in photoemission.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Intrinsic electron mobility exceeding 1000 cm$^2$/Vs in multilayer InSe FETs

Graphene-like two-dimensional (2D) materials, not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also, hold promises for device miniaturization down to atomic thickness. As one material belonging to this category, InSe is not only a promising candidate for optoelectronic devices but also has potential for ultrathin field effect transistor (FET) with high mobility transport. In this work, various substrates such as PMMA, bare silicon oxide, passivated silicon oxide, and silicon nitride were used to fabricate multi-layer InSe FET devices. Through back gating and Hall measurement in four-probe configuration, the devices' field effect mobility and intrinsic Hall mobility were extracted at various temperatures to study the material's intrinsic transport behavior and the effect of dielectric substrate. The sample's field effect and Hall mobilities over the range of 77-300K fall in the range of 0.1-2.0$\times$10$^3$ cm$^2$/Vs, which are comparable or better than the state of the art FETs made of 2D transition metal-dichalcogenides.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Nanoscale Determination of the Mass Enhancement Factor in the Lightly-Doped Bulk Insulator Lead Selenide

Bismuth chalcogenides and lead telluride/selenide alloys exhibit exceptional thermoelectric properties which could be harnessed for power generation and device applications. Since phonons play a significant role in achieving these desired properties, quantifying the interaction between phonons and electrons, which is encoded in the Eliashberg function of a material, is of immense importance. However, its precise extraction has in part been limited due to the lack of local experimental probes. Here we construct a method to directly extract the Eliashberg function using Landau level spectroscopy, and demonstrate its applicability to lightly-doped thermoelectric bulk insulator PbSe. In addition to its high energy resolution only limited by thermal broadening, this novel experimental method could be used to detect variations in mass enhancement factor at the nanoscale. As such, it opens up a new pathway for investigating the effects of chemical defects, surface doping and strain on the mass enhancement factor.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Single crystal growth and physical property characterization of PbTaSe2 as a noncentrosymmetric type-II superconductor

The single crystal growth and superconducting properties of PbTaSe2 with non-centrosymmetric crystal structure is reported. Using the chemical vapor transport (CVT) technique, PbTaSe2 crystallizes in a layered structure and the crystal symmetry has been shown belonging to a non-centrosymmetric space group P6-m2 confirmed by the consistent band picture near the Fermi level between the angle-resolved photoemission spectrum (ARPES) and theoretical calculations. Superconductivity with Tc =3.83 K has been characterized fully with electrical resistivity \r{ho}(T), magnetic susceptibility \c{hi}(T), and specific heat C(T) measurements using single crystal samples. The superconducting anisotropy, electron-phonon coupling λep, superconducting energy gap Δ0, and the specific heat jump ΔC/λTc at Tc confirms that PbTaSe2 can be categorized as a weakly coupled type-II superconductor.

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preprint2015arXiv

Surface Versus Bulk Dirac States Tuning in a Three-Dimensional Topological Dirac Semimetal

Recently, crystalline-symmetry-protected three-dimensional (3D) bulk Dirac semimetal phase has been experimentally identified in a stoichiometric high-mobility compound, Cd3As2. The Dirac state observed in Cd3As2 has been attributed to originate mostly from the bulk state while calculations show that the bulk and surface states overlap over the entire Dirac dispersion energy range. In this study, we unambiguously reveal doping induced evolution of the ground state of surface and bulk electron dynamics in a 3D Dirac semimetal. We develop a systematic technique to isolate the surface and bulk states in Cd3As2, by simultaneously utilizing angle-resolved photoemission spectroscopy (ARPES) and in-situ surface deposition. Our experimental results provide a method for tuning the chemical potential as well as to observe surface states degenerate with bulk states, which will be useful for future applications of 3D Dirac semimetal.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Momentum space imaging of Cooper pairing in a half-Dirac-gas topological superconductor (a helical 2D topological superconductor)

Superconductivity in Dirac electrons has recently been proposed as a new platform between novel concepts in high-energy and condensed matter physics. It has been proposed that supersymmetry and exotic quasiparticles, both of which remain elusive in particle physics, may be realized as emergent particles in superconducting Dirac electron systems. Using artificially fabricated topological insulator-superconductor heterostructures, we present direct spectroscopic evidence for the existence of Cooper pairing in a half Dirac gas 2D topological superconductor. Our studies reveal that superconductivity in a helical Dirac gas is distinctly different from that of in an ordinary two-dimensional superconductor while considering the spin degrees of freedom of electrons. We further show that the pairing of Dirac electrons can be suppressed by time-reversal symmetry breaking impurities removing the distinction. Our demonstration and momentum-space imaging of Cooper pairing in a half Dirac gas and its magnetic behavior taken together serve as a critically important 2D topological superconductor platform for future testing of novel fundamental physics predictions such as emergent supersymmetry and quantum criticality in topological systems.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Observation of monolayer valence band spin-orbit effect and induced quantum well states (QWS) in MoX2

Transition metal dichalcogenides have attracted much attention recently due to their potential applications in spintronics and photonics as a result of the indirect to direct band gap transition and the emergence of the spin-valley coupling phenomenon upon moving from the bulk to monolayer limit. Here, we report high-resolution angle-resolved photoemission spectroscopy on MoSe2 (molybdenum diselenide) single crystals and monolayer films of MoS2 grown on Highly Ordered Pyrolytic Graphite substrate. Our experimental results, for the first time, resolve the two distinct bands at the Brillouin zone corner of the bulk MoSe2, and provide evidence for the critically important spin-orbit split bands of the monolayer MoS2. Moreover, by depositing potassium on cleaved surfaces of these materials, the process through which quantum well states form on the surfaces of transition metal dichalcogenides is systematically imaged. We present a theoretical model to account for the observed spin-orbit splitting and the rich spectrum of the quantum well states observed in our experiments. Our findings taken together provide important insights into future applications of transition metal dichalcogenides in nanoelectronics, spintronics, and photonics devices as they critically depend on the spin-orbit physics of these materials.

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