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Fabio Lorenzo Traversa

Fabio Lorenzo Traversa contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall quant-ph Cell Behavior cond-mat.other Emerging Technologies Hardware Architecture nlin.AO

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preprint2016arXiv

Local energy and power for many-particle quantum systems driven by an external electrical field

We derive expressions for the expectation values of the local energy and the local power transferred by an external electrical field to a many-particle system of interacting spinless electrons. In analogy with the definition of the (local) presence and current probability densities, we construct a local energy operator such that the time-rate of change of its expectation value provides information on the spatial distribution of power. Results are presented as functions of an arbitrarily small volume $Ω$, and physical insights are discussed by means of the quantum hydrodynamical representation of the wavefunction, which is proven to allow for a clear-cut separation into contributions with and without classical correspondence. Quantum features of the local power are mainly manifested through the presence of non-local sources/sinks of power and through the action of forces with no classical counterpart. Many-particle classical-like effects arise in the form of current-force correlations and through the inflow/outflow of energy across the boundaries of the volume $Ω$. Interestingly, such intriguing features are only reflected in the expression for the local power when the volume $Ω$ is finite. Otherwise, for closed systems with $Ω\to \infty$, we recover a classical-like single-particle expression.

preprint2016arXiv

Sequential measurement of displacement and conduction currents in electronic devices

The extension of the Ramo-Schockley-Pellegrini theorem for quantum systems allows to define a positive-operator valued measure (POVM) for the total conduction plus displacement electrical current. The resulting current operator is characterized by two parameters, viz. the width of the associated Gaussian functions and the lapse of time between consecutive measurements. For large Gaussian dispersions and small time intervals, the operator obeys to a continuous weak-measurement scheme. Contrarily, in the limit of very narrow Gaussian widths and a single-shot measurement, the operator corresponds to a standard von Neumann (projective) measurement. We have implemented the resulting measurement protocol into a quantum electron transport simulator. Numerical results for a resonant tunneling diode show the great sensibility of current-voltage characteristics to different parameter configurations of the total current operator.

preprint2014arXiv

Dynamic Computing Random Access Memory

The present von Neumann computing paradigm involves a significant amount of information transfer between a central processing unit (CPU) and memory, with concomitant limitations in the actual execution speed. However, it has been recently argued that a different form of computation, dubbed memcomputing [Nature Physics, 9, 200-202 (2013)] and inspired by the operation of our brain, can resolve the intrinsic limitations of present day architectures by allowing for computing and storing of information on the same physical platform. Here we show a simple and practical realization of memcomputing that utilizes easy-to-build memcapacitive systems. We name this architecture Dynamic Computing Random Access Memory (DCRAM). We show that DCRAM provides massively-parallel and polymorphic digital logic, namely it allows for different logic operations with the same architecture, by varying only the control signals. In addition, by taking into account realistic parameters, its energy expenditures can be as low as a few fJ per operation. DCRAM is fully compatible with CMOS technology, can be realized with current fabrication facilities, and therefore can really serve as an alternative to the present computing technology.

preprint2013arXiv

Memory models of adaptive behaviour

Adaptive response to a varying environment is a common feature of biological organisms. Reproducing such features in electronic systems and circuits is of great importance for a variety of applications. Here, we consider memory models inspired by an intriguing ability of slime molds to both memorize the period of temperature and humidity variations, and anticipate the next variations to come, when appropriately trained. Effective circuit models of such behavior are designed using i) a set of LC-contours with memristive damping, and ii) a single memcapacitive system-based adaptive contour with memristive damping. We consider these two approaches in detail by comparing their results and predictions. Finally, possible biological experiments that would discriminate between the models are discussed. In this work, we also introduce an effective description of certain memory circuit elements.