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F. Tang

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Published work

7 published item(s)

preprint2021arXiv

ALMA Lensing Cluster Survey: an ALMA galaxy signposting a MUSE galaxy group at z=4.3 behind 'El Gordo'

We report the discovery of a Multi Unit Spectroscopic Explorer (MUSE) galaxy group at z=4.32 lensed by the massive galaxy cluster ACT-CL J0102-4915 (aka El Gordo) at z=0.87, associated with a 1.2 mm source which is at a 2.07+/-0.88 kpc projected distance from one of the group galaxies. Three images of the whole system appear in the image plane. The 1.2 mm source has been detected within the Atacama Large Millimetre/submillimetre Array (ALMA) Lensing Cluster Survey (ALCS). As this ALMA source is undetected at wavelengths lambda < 2 microns, its redshift cannot be independently determined, however, the three lensing components indicate that it belongs to the same galaxy group at z=4.32. The four members of the MUSE galaxy group have low to intermediate stellar masses (~ 10^7-10^{10} Msun) and star formation rates (SFRs) of 0.4-24 Msun/yr, resulting in high specific SFRs (sSFRs) for two of them, which suggest that these galaxies are growing fast (with stellar-mass doubling times of only ~ 2x10^7 years). This high incidence of starburst galaxies is likely a consequence of interactions within the galaxy group, which is compact and has high velocity dispersion. Based on the magnification-corrected sub-/millimetre continuum flux density and estimated stellar mass, we infer that the ALMA source is classified as an ordinary ultra-luminous infrared galaxy (with associated dust-obscured SFR~200-300 Msun/yr) and lies on the star-formation main sequence. This reported case of an ALMA/MUSE group association suggests that some presumably isolated ALMA sources are in fact signposts of richer star-forming environments at high redshifts.

preprint2020arXiv

Anisotropic and extreme magnetoresistance in the magnetic semimetal candidate Erbium monobismuthide

Rare-earth monopnictides display rich physical behaviors, featuring most notably spin and orbital orders in their ground state. Here, we grow ErBi single crystal and study its magnetic, thermal and electrical properties. An analysis of the magnetic entropy and magnetization indicates that the weak magnetic anisotropy in ErBi possibly derives from the mixing effect, namely the anisotropic ground state of Er3+ (4f11) mingles with the isotropic excited state through exchange interaction. At low temperature, an extremely large magnetoresistance (~104%) with a parabolic magnetic-field dependence is observed, which can be ascribed to the nearly perfect electron-hole compensation and ultrahigh carrier mobility. When the magnetic field is rotated in the ab (ac) plane and the current flows in the b axis, the angular magnetoresistance in ErBi shows a twofold (fourfold) symmetry. Similar case has been observed in LaBi where the anisotropic Fermi surface dominates the low-temperature transport. Our theoretical calculation suggests that near the Fermi level ErBi shares similarity with LaBi in the electronic band structures. These findings indicate that the angular magnetoresistance of ErBi could be mainly determined by its anisotropic Fermi surface topology. Besides, contributions from several other possibilities, including the spin-dependent scattering, spin-orbit scattering, and demagnetization correlation to the angular magnetoresistance of ErBi are also discussed.

preprint2020arXiv

Magnetic-field-induced nontrivial electronic state in the Kondo-lattice semimetal CeSb

Synergic effect of electronic correlation and spin-orbit coupling is an emerging topic in topological materials. Central to this rapidly developing area are the prototypes of strongly correlated heavy-fermion systems. Recently, some Ce-based compounds are proposed to host intriguing topological nature, among which the electronic properties of CeSb are still under debate. In this paper, we report a comprehensive study combining magnetic and electronic transport measurements, and electronic band structure calculations of this compound to identify its topological nature. Quantum oscillations are clearly observed in both magnetization and magnetoresistance at high fields, from which one pocket with a nontrivial Berry phase is recognized. Angular-dependent magnetoresistance shows that this pocket is elongated in nature and corresponds to the electron pocket as observed in LaBi. Nontrivial electronic structure of CeSb is further confirmed by first-principle calculations, which arises from spin splitting in the fully polarized ferromagnetic state. These features indicate that magnetic-field can induce nontrivial topological electronic states in this prototypical Kondo semimetal.

preprint2020arXiv

Pressure effect on the topologically nontrivial electronic state and transport of lutecium monobismuthide

Rare-earth monopnictides are predicted to be nontrivial semimetal candidates and show pressure-induced superconductivity. Here, we grow LuBi single crystal and study the magnetization, transport behaviors and electronic band structures to reveal its topological semimetal feature and superconductivity under pressure. At 0 GPa, the quantum oscillations indicate that there are several topologically nontrivial carrier pockets around the Fermi level, among which the hole ones are isotropic in shape, while the electron ones are anisotropic and responsible for the angular magnetoresistance. Upon compression, the superconductivity emerges in the titled compound, showing a similar pressure dependence as that observed in LaBi. Our calculation suggests that the electronic band structures are robust at low- and high-pressure respectively and thus the topological features are always preserved. Besides, the nearly pressure-independent density of state in LuBi indicates that the conventional electron-phonon coupling appears to play a minor role in the superconductivity.

preprint2016arXiv

A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates

In this paper we report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane and m-plane free-standing bulk GaN substrates where the In content varied from 0.14 to 0.28 in the m-plane series and 0.08 to 0.21 for the a-plane series. The low temperature photoluminescence spectra from both sets of samples are very broad with full width at half-maximum height increasing from 81 to 330 meV as the In fraction increases. Comparative photoluminescence excitation spectroscopy indicates that the recombination mainly involves strongly localised carriers. At a temperature of 10 K the degree of linear polarisation of the a-plane samples is much smaller than of the m-plane counterparts and also varies across the spectrum. From polarisation-resolved photoluminescence excitation spectroscopy we measured the energy splitting between the lowest valence sub-band states to lie in the range of 23-54 meV for both a-and m-plane samples in which we could observe distinct exciton features in the polarised photoluminescence excitation spectroscopy. Thus, the thermal occupation of a higher valence subband cannot be responsible for the reduction of the degree of linear polarisation. Time-resolved spectroscopy indicates that in a-plane samples there is an extra emission component which at least partly responsible for the reduction in the degree of linear polarisation.

preprint2015arXiv

Signature of strong spin-orbital coupling in the large non-saturating magnetoresistance material WTe2

We report the detailed electronic structure of WTe$_2$ by high resolution angle-resolved photoemission spectroscopy. Unlike the simple one electron plus one hole pocket type of Fermi surface topology reported before, we resolved a rather complicated Fermi surface of WTe$_2$. Specifically, there are totally nine Fermi pockets, including one hole pocket at the Brillouin zone center $Γ$, and two hole pockets and two electron pockets on each side of $Γ$ along the $Γ$-$X$ direction. Remarkably, we have observed circular dichroism in our photoemission spectra, which suggests that the orbital angular momentum exhibits a rich texture at various sections of the Fermi surface. As reported previously for topological insulators and Rashiba systems, such a circular dichroism is a signature for spin-orbital coupling (SOC). This is further confirmed by our density functional theory calculations, where the spin texture is qualitatively reproduced as the conjugate consequence of SOC. Since the backscattering processes are directly involved with the resistivity, our data suggest that the SOC and the related spin and orbital angular momentum textures may be considered in the understanding of the anomalous magnetoresistance of WTe$_2$.

preprint2015arXiv

Structural, electronic, and optical properties of $m$-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory

In this paper we present a detailed analysis of the structural, electronic, and optical properties of an $m$-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally characterized by x-ray diffraction, scanning transmission electron microscopy, and 3D atom probe tomography. The optical properties of the sample have been studied by photoluminescence (PL), time-resolved PL spectroscopy, and polarized PL excitation spectroscopy. The PL spectrum consisted of a very broad PL line with a high degree of optical linear polarization. To understand the optical properties we have performed atomistic tight-binding calculations, and based on our initial atom probe tomography data, the model includes the effects of strain and built-in field variations arising from random alloy fluctuations. Furthermore, we included Coulomb effects in the calculations. Our microscopic theoretical description reveals strong hole wave function localization effects due to random alloy fluctuations, resulting in strong variations in ground state energies and consequently the corresponding transition energies. This is consistent with the experimentally observed broad PL peak. Furthermore, when including Coulomb contributions in the calculations we find strong exciton localization effects which explain the form of the PL decay transients. Additionally, the theoretical results confirm the experimentally observed high degree of optical linear polarization. Overall, the theoretical data are in very good agreement with the experimental findings, highlighting the strong impact of the microscopic alloy structure on the optoelectronic properties of these systems.