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F. Scholze

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physics.optics physics.comp-ph

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preprint2012arXiv

Analytical modeling and 3D finite element simulation of line edge roughness in scatterometry

The influence of edge roughness in angle resolved scatterometry at periodically structured surfaces is investigated. A good description of the radiation interaction with structured surfaces is crucial for the understanding of optical imaging processes like, e.g. in photolithography. We compared an analytical 2D model and a numerical 3D simulation with respect to the characterization of 2D diffraction of a line grating involving structure roughness. The results show a remarkably high agreement. The diffraction intensities of a rough structure can therefore be estimated using the numerical simulation result of an undisturbed structure and an analytically derived correction function. This work allows to improve scatterometric results for the case of practically relevant 2D structures.

preprint2011arXiv

Investigation of 3D Patterns on EUV Masks by Means of Scatterometry and Comparison to Numerical Simulations

EUV scatterometry is performed on 3D patterns on EUV lithography masks. Numerical simulations of the experimental setup are performed using a rigorous Maxwell solver. Mask geometry is determined by minimizing the difference between experimental results and numerical results for varied geometrical input parameters for the simulations.

preprint2010arXiv

Metrology of EUV Masks by EUV-Scatterometry and Finite Element Analysis

Extreme ultraviolet (EUV) lithography is seen as a main candidate for production of future generation computer technology. Due to the short wavelength of EUV light (around 13 nm) novel reflective masks have to be used in the production process. A prerequisite to meet the high quality requirements for these EUV masks is a simple and accurate method for absorber pattern profile characterization. In our previous work we demonstrated that the Finite Element Method (FEM) is very well suited for the simulation of EUV scatterometry and can be used to reconstruct EUV mask profiles from experimental scatterometric data. In this contribution we apply an indirect metrology method to periodic EUV line masks with different critical dimensions (140 nm and 540 nm) over a large range of duty cycles (1:2, ..., 1:20). We quantitatively compare the reconstructed absorber pattern parameters to values obtained from direct AFM and CD-SEM measurements. We analyze the reliability of the reconstruction for the given experimental data. For the CD of the absorber lines, the comparison shows agreement of the order of 1nm. Furthermore we discuss special numerical techniques like domain decomposition algorithms and high order finite elements and their importance for fast and accurate solution of the inverse problem.