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F. Navarin

F. Navarin appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

2 published item(s)

preprint2013arXiv

Evidence for the coexistence of Dirac and massive carriers in a-(BEDT-TTF)2I3 under hydrostatic pressure

Transport measurements were performed on the organic layered compound \aI3 under hydrostatic pressure. The carrier types, densities and mobilities are determined from the magneto-conductance of \aI3 . While evidence of high-mobility massless Dirac carriers has already been given, we report here, their coexistence with low-mobility massive holes. This coexistence seems robust as it has been found up to the highest studied pressure. Our results are in agreement with recent DFT calculations of the band structure of this system under hydrostatic pressure. A comparison with graphene Dirac carriers has also been done.

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preprint2013arXiv

Tuning a Schottky barrier in a photoexcited topological insulator with transient Dirac cone electron-hole asymmetry

The advent of Dirac materials has made it possible to realize two dimensional gases of relativistic fermions with unprecedented transport properties in condensed matter. Their photoconductive control with ultrafast light pulses is opening new perspectives for the transmission of current and information. Here we show that the interplay of surface and bulk transient carrier dynamics in a photoexcited topological insulator can control an essential parameter for photoconductivity - the balance between excess electrons and holes in the Dirac cone. This can result in a strongly out of equilibrium gas of hot relativistic fermions, characterized by a surprisingly long lifetime of more than 50 ps, and a simultaneous transient shift of chemical potential by as much as 100 meV. The unique properties of this transient Dirac cone make it possible to tune with ultrafast light pulses a relativistic nanoscale Schottky barrier, in a way that is impossible with conventional optoelectronic materials.

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