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F. Nabeshima

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5 publications

preprint2022arXiv

Interface superconductivity in FeSe thin films on SrTiO3_3grown by the PLD technique

In this study, we fabricate 5-30-nm-thick films of FeSe/STO using pulsed laser deposition (PLD). The grown films exhibit superconductivity with an onset TcT_{\mathrm{c}} that is much higher than that of bulk FeSe under ambient pressure. The observed TcT_{\mathrm{c}} values are exceptionally high in terms of the strain vs. TcT_{\mathrm{c}} relationship of the same material established so far. Furthermore, TcT_{\mathrm{c}} increases as the film thickness decreases, except for films thinner than 10 nm. This thickness dependence of TcT_{\mathrm{c}} is in good agreement with the results reported for films grown by molecular beam epitaxy (MBE) that exhibit interface superconductivity. These results indicate the realization of interface superconductivity in PLD-grown FeSe/STO. Furthermore, our PLD technique requires no post-annealing to realize interface superconductivity, which is different from MBE techniques. Because the PLD technique has the advantage that various interfaces can be fabricated easily by simply altering the target materials, our results open novel routes to study interface superconductivity toward higher TcT_{\mathrm{c}} by systematic control of the interface.

preprint2020arXiv

Dynamic Evolution of Flux Distributions in a Pulse-driven Superconductor by High-speed Magneto-optical Imaging

The accurate understanding of flux dynamics is essential for the design and operation of superconducting circuits. The time evolution of flux-density distribution in an NbN strip by the transport current was observed using high-speed magneto-optical microscopy. It was determined that even for the dynamic penetration and exclusion of vortices under the transport current, the surface barrier is essential. This feature is important for the correct understanding of the complex behavior of state-of-the-art superconducting devices.

preprint2014arXiv

Point-contact Andreev-reflection spectroscopy in Fe(Te,Se) films: multiband superconductivity and electron-boson coupling

We report on a study of the superconducting order parameter in Fe(Te1−x_{1-x}Sex_{x}) thin films (with different Se contents: x=0.3, 0.4, 0.5) by means of point-contact Andreev-reflection spectroscopy (PCARS). The PCARS spectra show reproducible evidence of multiple structures, namely two clear conductance maxima associated to a superconducting gap of amplitude ΔE≃2.75kBTcΔ_E \simeq 2.75 k_B T_c and additional shoulders at higher energy that, as we show, are the signature of the strong interaction of charge carriers with a bosonic mode whose characteristic energy coincides with the spin-resonance energy. The details of some PCARS spectra at low energy suggest the presence of a smaller and not easily discernible gap of amplitude ΔH≃1.75kBTcΔ_H \simeq 1.75 k_B T_c. The existence of this gap and its amplitude are confirmed by PCARS measurements in Fe(Te1−x_{1-x}Sex_{x}) single crystals. The values of the two gaps ΔEΔ_E and ΔHΔ_H, once plotted as a function of the local critical temperature TcAT_c^A, turn out to be in perfect agreement with the results obtained by various experimental techniques reported in literature.

preprint2012arXiv

Microscopic analysis of the chemical reaction between Fe(Te,Se) thin films and underlying CaF2_2

To understand the chemical reaction at the interface of materials, we performed a transmission electron microscopy (TEM) observation in four types of Fe(Te,Se) superconducting thin films prepared on different types of substrates: CaF2 substrate, CaF2 substrate with a CaF2 buffer layer, CaF2 substrate with a FeSe buffer layer, and a LaAlO3 substrate with a CaF2 buffer layer. Based on the energy-dispersive X-ray spectrometer (EDX) analysis, we found possible interdiffusion between fluorine and selenium that has a strong influence on the superconductivity in Fe(Te,Se) films. The chemical interdiffusion also plays a significant role in the variation of the lattice parameters. The lattice parameters of the Fe(Te,Se) thin films are primarily determined by the chemical substitution of anions, and the lattice mismatch only plays a secondary role.

preprint2011arXiv

Epitaxial growth of FeSe0.5_{0.5}Te0.5_{0.5} thin films on CaF2_2 substrates with high critical current density

In-situ epitaxial growth of FeSe0.5_{0.5}Te0.5_{0.5} thin films is demonstrated on a non-oxide substrate CaF2_2. Structural analysis reveals that compressive stress is moderately added to 36-nm thick FeSe0.5_{0.5}Te0.5_{0.5}, which pushes up the critical temperature above 15 K, showing higher values than that of bulk crystals. Critical current density at TT = 4.5 K reaches 5.9 x 104^4 Acm−2^{-2} at μ0Hμ_0H = 10 T, and 4.2 x 104^4 Acm−2^{-2} at μ0Hμ_0H = 14 T. These results indicate that fluoride substrates have high potential for the growth of iron-based superconductors in comparison with popular oxide substrates.

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