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A. Ichinose

A. Ichinose appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.supr-concond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2012arXiv

Microscopic analysis of the chemical reaction between Fe(Te,Se) thin films and underlying CaF$_2$

To understand the chemical reaction at the interface of materials, we performed a transmission electron microscopy (TEM) observation in four types of Fe(Te,Se) superconducting thin films prepared on different types of substrates: CaF2 substrate, CaF2 substrate with a CaF2 buffer layer, CaF2 substrate with a FeSe buffer layer, and a LaAlO3 substrate with a CaF2 buffer layer. Based on the energy-dispersive X-ray spectrometer (EDX) analysis, we found possible interdiffusion between fluorine and selenium that has a strong influence on the superconductivity in Fe(Te,Se) films. The chemical interdiffusion also plays a significant role in the variation of the lattice parameters. The lattice parameters of the Fe(Te,Se) thin films are primarily determined by the chemical substitution of anions, and the lattice mismatch only plays a secondary role.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Epitaxial growth of FeSe$_{0.5}$Te$_{0.5}$ thin films on CaF$_2$ substrates with high critical current density

In-situ epitaxial growth of FeSe$_{0.5}$Te$_{0.5}$ thin films is demonstrated on a non-oxide substrate CaF$_2$. Structural analysis reveals that compressive stress is moderately added to 36-nm thick FeSe$_{0.5}$Te$_{0.5}$, which pushes up the critical temperature above 15 K, showing higher values than that of bulk crystals. Critical current density at $T$ = 4.5 K reaches 5.9 x 10$^4$ Acm$^{-2}$ at $μ_0H$ = 10 T, and 4.2 x 10$^4$ Acm$^{-2}$ at $μ_0H$ = 14 T. These results indicate that fluoride substrates have high potential for the growth of iron-based superconductors in comparison with popular oxide substrates.

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preprint2011arXiv

Hall effect of FeTe and Fe(Se_1-x_Te_x_) thin films

The Hall effect is investigated in thin-film samples of iron-chalcogenide superconductors in detail. The Hall coefficient (RH) of FeTe and Fe(Se1-xTex) exhibits a similar positive value around 300 K, indicating that the high-temperature normal state is dominated by hole-channel transport. FeTe exhibits a sign reversal from positive to negative across the transition to the low-temperature antiferromagnetic state, indicating the occurrence of drastic reconstruction in the band structure. The mobility analysis using the carrier density theoretically calculated reveals that the mobility of holes is strongly suppressed to zero, and hence the electric transport looks to be dominated by electrons. The Se substitution to Te suppresses the antiferromagnetic long-range order and induces superconductivity instead. The similar mobility analysis for Fe(Se0.4Te0.6) and Fe(Se0.5Te0.5) thin films shows that the mobility of electrons increases with decreasing temperature even in the paramagnetic state, and keeps sufficiently high values down to the superconducting transition temperature. From the comparison between FeTe and Fe(Se1-xTex), it is suggested that the coexistence of 'itinerant' carriers both in electron and hole channels is indispensable for the occurrence of superconductivity.

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