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Eva Monroy

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cond-mat.mtrl-sci cond-mat.mes-hall physics.optics cond-mat.supr-con physics.app-ph physics.ins-det

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preprint2026arXiv

Growth and Morphology of InN Nanowires on Si<111> and Si<100> at Back-End-Of-Line Compatible Temperatures

InN nanowires were grown on Si<111> and Si<100> substrates by plasma-assisted molecular beam epitaxy using a thin AlN buffer layer at temperatures compatible with the thermal budget limitation imposed by Back-End-Of-Line processing. Reflection high-energy electron diffraction reveals different nucleation behaviors on the two substrate orientations, with higher structural disorder in the case of Si<100>. However, vertically aligned nanowires with hexagonal cross section and N polarity are obtained on both substrates. A statistical analysis of nanowire morphology as a function of growth temperature indicates similar trends in diameter, density, and length on Si<111> and Si<100>, which are explained by adatom kinetics during growth. Nanowires on Si<100> exhibit improved uniformity and reduced tapering, attributed to the different nanowire nucleation due to microstructural properties of the AlN buffer layer. The results demonstrate the feasibility of growing high-quality InN nanowires on Si<100>, supporting their potential for monolithic integration of nanowire-based photodetectors on silicon.

preprint2022arXiv

Reduction of the lasing threshold in optically pumped AlGaN/GaN lasers with two-step etched facets

We report a two-step process to obtain smooth and vertical {10-10} m-plane facets in AlGaN/GaN separate confinement heterostructures designed to fabricate UV lasers emitting at 355 nm. The process consists in a dry etching by RIE-ICP combined with a crystallographic-selective wet etching process using a KOH-based solution. The anisotropy in the wet etching rates between the different crystallographic planes of the AlGaN structure, allows the fabrication of flat and parallel facets without a degradation of the multilayered ensemble. The optical performance of the lasers display a major improved when using the two-step process for the definition of the cavity, in comparison to cavities fabricated by mechanical cleaving, with the lasing threshold under optical pumping being reduced to almost half.

preprint2021arXiv

Optical net gain measurement on Al$_{0.07}$Ga$_{0.93}$N/GaN multi-quantum well

We present net gain measurements at room temperature in Al$_{0.07}$Ga$_{0.93}$N/GaN 10-period multi-quantum well emitting at 367 nm, using the variable stripe length method. Measurements were conducted at two different positions on the sample, where the net gain threshold was attained at 218 kW/cm$^{2}$ and 403 kW/cm$^{2}$. At the position with higher threshold, we observed an anomalous amplification of the photoluminescence intensity that occurs for long stripe lengths (superior to 400 $μ$m) and high pumping power (superior to 550 kW/cm$^{2}$), leading to an overestimation of the gain value. We attribute such a phenomenon to the feedback provided by the reflection from cracks, which were created during the epitaxial growth due to the strong lattice mismatch between different layers. The highest gain value without anomalous amplification was 131 cm$^{-1}$, obtained at the maximum pumping power density of the experimental setup (743 kW/cm$^{2}$). Using the intrinsic efficiency limit of the cathodoluminescence process, we estimate a lower limit for electron beam pumped laser threshold at room temperature of 390 kW/cm$^{2}$ for this multi-quantum well structure.

preprint2020arXiv

Correlated electro-optical and structural study of electrically tunable nanowire quantum dot emitters

Quantum dots inserted in semiconducting nanowires are a promising platform for the fabrication of single photon devices. However, it is difficult to fully comprehend the electro-optical behaviour of such quantum objects without correlated studies of the structural and optical properties on the same nanowire. In this work, we study the spectral tunability of the emission of a single quantum dot in a GaN nanowire by applying external bias. The nanowires are dispersed and contacted on electron beam transparent Si3N4 membranes, so that transmission electron microscopy observations, photocurrent and micro-photoluminescence measurements under bias can be performed on the same specimen. The emission from a single dot blue or red shifts when the external electric field compensates or enhances the internal electric field generated by the spontaneous and piezoelectric polarization. A detailed study of two nanowire specimens emitting at 327.5 nm and 307.5 nm shows spectral shifts at rates of 20 and 12 meV/V, respectively. Theoretical calculations facilitated by the modelling of the

preprint2016arXiv

Design of broadband high-efficiency superconducting-nanowire single photon detectors

In this paper several designs to maximize the absorption efficiency of superconducting-nanowire single-photon detectors are investigated. Using a simple optical cavity consisting of a gold mirror and a SiO2 layer, the absorption efficiency can be boosted to over 97%: this result is confirmed experimentally by the realization of an NbTiN-based detector having an overall system detection efficiency of 85% at 1.31 micrometers. Calculations show that by sandwiching the nanowire between two dielectric Bragg reflectors, unity absorption (> 99.9%) could be reached at the peak wavelength for optimized structures. To achieve broadband high efficiency, a different approach is considered: a waveguide-coupled detector. The calculations performed in this work show that, by correctly dimensioning the waveguide and the nanowire, polarization-insensitive detectors absorbing more than 95% of the injected photons over a wavelength range of several hundred nm can be designed. We propose a detector design making use of GaN/AlN waveguides, since these materials allow lattice-matched epitaxial deposition of Nb(Ti)N films and are transparent on a very wide wavelength range.

preprint2014arXiv

Polarization fields in GaN/AlN nanowire heterostructures studied by Off axis holography

In this work, we present an off-axis holography study of GaN/AlN heterostructured nanowires grown by plasma-assisted molecular-beam epitaxy. We discuss the sample preparation of nanowire samples for electron holography and combine potential profiles obtained using holography with theoretical calculations of the projected potential in order to gain understanding of the potential distribution in these nanostructures. The effects of surface states are discussed