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Erik Nielsen

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Published work

25 published item(s)

preprint2026arXiv

Hallucination as an Anomaly: Dynamic Intervention via Probabilistic Circuits

One of the most critical challenges in Large Language Models is their tendency to hallucinate, i.e., produce factually incorrect responses. Existing approaches show promising results in terms of hallucination correction, but still suffer from a main limitation: they apply corrections indiscriminately to every token, corrupting also the originally correct generations. To overcome this drawback, we propose PCNET, a Probabilistic Circuit trained as a tractable density estimator over the LLM residual stream. The method detects hallucinations as geometric anomalies on the factual manifold, which is done via exact Negative Log-Likelihood computation, hence without the need for sampling, external verifiers, or weight modifications, as in existing techniques. To demonstrate its effectiveness, we exploit PCNET as a dynamic gate that distinguishes hallucinated from factual hidden states at each decoding step. This triggers our second main contribution, PC-LDCD (Probabilistic Circuit Latent Density Contrastive Decoding), only when the latent geometry deviates from factual regions, while leaving correct generations untouched. Across four LLMs, ranging from 1B to 8B models, and four benchmarks covering conversational reasoning, knowledge-intensive QA, reading comprehension, and truthfulness, PCNET achieves near-perfect hallucination detection across CoQA, SQuAD v2.0, and TriviaQA, with AUROC reaching up to 99%. Moreover, PC-LDCD obtains the highest True+Info, MC2, and MC3 scores on TruthfulQA in three out of four models, in comparison with state-of-the-art baselines, while reducing the mean corruption rate to 53.7% and achieving a preservation rate of 79.3%. Our proposed method is publicly available on GitHub.

preprint2022arXiv

Measuring the Capabilities of Quantum Computers

A quantum computer has now solved a specialized problem believed to be intractable for supercomputers, suggesting that quantum processors may soon outperform supercomputers on scientifically important problems. But flaws in each quantum processor limit its capability by causing errors in quantum programs, and it is currently difficult to predict what programs a particular processor can successfully run. We introduce techniques that can efficiently test the capabilities of any programmable quantum computer, and we apply them to twelve processors. Our experiments show that current hardware suffers complex errors that cause structured programs to fail up to an order of magnitude earlier - as measured by program size - than disordered ones. As a result, standard error metrics inferred from random disordered program behavior do not accurately predict performance of useful programs. Our methods provide efficient, reliable, and scalable benchmarks that can be targeted to predict quantum computer performance on real-world problems.

preprint2022arXiv

Precision tomography of a three-qubit donor quantum processor in silicon

Nuclear spins were among the first physical platforms to be considered for quantum information processing, because of their exceptional quantum coherence and atomic-scale footprint. However, their full potential for quantum computing has not yet been realized, due to the lack of methods to link nuclear qubits within a scalable device combined with multi-qubit operations with sufficient fidelity to sustain fault-tolerant quantum computation. Here we demonstrate universal quantum logic operations using a pair of ion-implanted 31P donor nuclei in a silicon nanoelectronic device. A nuclear two-qubit controlled-Z gate is obtained by imparting a geometric phase to a shared electron spin, and used to prepare entangled Bell states with fidelities up to 94.2(2.7)%. The quantum operations are precisely characterised using gate set tomography (GST), yielding one-qubit average gate fidelities up to 99.95(2)%, two-qubit average gate fidelity of 99.37(11)% and two-qubit preparation/measurement fidelities of 98.95(4)%. These three metrics indicate that nuclear spins in silicon are approaching the performance demanded in fault-tolerant quantum processors. We then demonstrate entanglement between the two nuclei and the shared electron by producing a Greenberger-Horne-Zeilinger three-qubit state with 92.5(1.0)% fidelity. Since electron spin qubits in semiconductors can be further coupled to other electrons or physically shuttled across different locations, these results establish a viable route for scalable quantum information processing using donor nuclear and electron spins.

preprint2021arXiv

A taxonomy of small Markovian errors

Errors in quantum logic gates are usually modeled by quantum process matrices (CPTP maps). But process matrices can be opaque, and unwieldy. We show how to transform a gate's process matrix into an error generator that represents the same information more usefully. We construct a basis of simple and physically intuitive elementary error generators, classify them, and show how to represent any gate's error generator as a mixture of elementary error generators with various rates. Finally, we show how to build a large variety of reduced models for gate errors by combining elementary error generators and/or entire subsectors of generator space. We conclude with a few examples of reduced models, including one with just $9N^2$ parameters that describes almost all commonly predicted errors on an N-qubit processor.

preprint2021arXiv

Characterizing mid-circuit measurements on a superconducting qubit using gate set tomography

Measurements that occur within the internal layers of a quantum circuit -- mid-circuit measurements -- are an important quantum computing primitive, most notably for quantum error correction. Mid-circuit measurements have both classical and quantum outputs, so they can be subject to error modes that do not exist for measurements that terminate quantum circuits. Here we show how to characterize mid-circuit measurements, modelled by quantum instruments, using a technique that we call quantum instrument linear gate set tomography (QILGST). We then apply this technique to characterize a dispersive measurement on a superconducting transmon qubit within a multiqubit system. By varying the delay time between the measurement pulse and subsequent gates, we explore the impact of residual cavity photon population on measurement error. QILGST can resolve different error modes and quantify the total error from a measurement; in our experiment, for delay times above 1000 ns we measured a total error rate (i.e., half diamond distance) of $ε_{\diamond} = 8.1 \pm 1.4 \%$, a readout fidelity of $97.0 \pm 0.3\%$, and output quantum state fidelities of $96.7 \pm 0.6\%$ and $93.7 \pm 0.7\%$ when measuring $0$ and $1$, respectively.

preprint2020arXiv

Detecting crosstalk errors in quantum information processors

Crosstalk occurs in most quantum computing systems with more than one qubit. It can cause a variety of correlated and nonlocal crosstalk errors that can be especially harmful to fault-tolerant quantum error correction, which generally relies on errors being local and relatively predictable. Mitigating crosstalk errors requires understanding, modeling, and detecting them. In this paper, we introduce a comprehensive framework for crosstalk errors and a protocol for detecting and localizing them. We give a rigorous definition of crosstalk errors that captures a wide range of disparate physical phenomena that have been called "crosstalk", and a concrete model for crosstalk-free quantum processors. Errors that violate this model are crosstalk errors. Next, we give an equivalent but purely operational (model-independent) definition of crosstalk errors. Using this definition, we construct a protocol for detecting a large class of crosstalk errors in a multi-qubit processor by finding conditional dependencies between observed experimental probabilities. It is highly efficient, in the sense that the number of unique experiments required scales at most cubically, and very often quadratically, with the number of qubits. We demonstrate the protocol using simulations of 2-qubit and 6-qubit processors.

preprint2020arXiv

Probing quantum processor performance with pyGSTi

PyGSTi is a Python software package for assessing and characterizing the performance of quantum computing processors. It can be used as a standalone application, or as a library, to perform a wide variety of quantum characterization, verification, and validation (QCVV) protocols on as-built quantum processors. We outline pyGSTi's structure, and what it can do, using multiple examples. We cover its main characterization protocols with end-to-end implementations. These include gate set tomography, randomized benchmarking on one or many qubits, and several specialized techniques. We also discuss and demonstrate how power users can customize pyGSTi and leverage its components to create specialized QCVV protocols and solve user-specific problems.

preprint2016arXiv

Optimization of a solid-state electron spin qubit using Gate Set Tomography

State of the art qubit systems are reaching the gate fidelities required for scalable quantum computation architectures. Further improvements in the fidelity of quantum gates demands characterization and benchmarking protocols that are efficient, reliable and extremely accurate. Ideally, a benchmarking protocol should also provide information on how to rectify residual errors. Gate Set Tomography (GST) is one such protocol designed to give detailed characterization of as-built qubits. We implemented GST on a high-fidelity electron-spin qubit confined by a single $^{31}$P atom in $^{28}$Si. The results reveal systematic errors that a randomized benchmarking analysis could measure but not identify, whereas GST indicated the need for improved calibration of the length of the control pulses. After introducing this modification, we measured a new benchmark average gate fidelity of $99.942(8)\%$, an improvement on the previous value of $99.90(2)\%$. Furthermore, GST revealed high levels of non-Markovian noise in the system, which will need to be understood and addressed when the qubit is used within a fault-tolerant quantum computation scheme.

preprint2015arXiv

Multivalley effective mass theory simulation of donors in silicon

Last year, Salfi et al. made the first direct measurements of a donor wave function and found extremely good theoretical agreement with atomistic tight-binding [Salfi et al., Nat. Mater. 13, 605 (2014)]. Here, we show that multi-valley effective mass theory, applied properly, does achieve close agreement with tight-binding and hence gives reliable predictions. To demonstrate this, we variationally solve the coupled six-valley Shindo-Nara equations, including silicon's full Bloch functions. Surprisingly, we find that including the full Bloch functions necessitates a tetrahedral, rather than spherical, donor central cell correction to accurately reproduce the experimental energy spectrum of a phosphorus impurity in silicon. We cross-validate this method against atomistic tight-binding calculations, showing that the two theories agree well for the calculation of donor-donor tunnel coupling. Further, we benchmark our results by performing a statistical uncertainty analysis, confirming that derived quantities such as the wave function profile and tunnel couplings are robust with respect to variational energy fluctuations. Finally, we apply this method to exhaustively enumerate the tunnel coupling for all donor-donor configurations within a large search volume, demonstrating conclusively that the tunnel coupling has no spatially stable regions. Though this instability is problematic for reliably coupling donor pairs for two-qubit operations, we identify specific target locations where donor qubits can be placed with scanning tunneling microscopy technology to achieve reliably large tunnel couplings.

preprint2015arXiv

Transport through an impurity tunnel coupled to a Si/SiGe quantum dot

Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here we report the characterization of a quantum dot coupled to a localized electronic state, and we present evidence of controllable coupling between the quantum dot and the localized state. A set of measurements of transport through this device enable the determination of the most likely location of the localized state, consistent with an electronically active impurity in the quantum well near the edge of the quantum dot. The experiments we report are consistent with a gate-voltage controllable tunnel coupling, which is an important building block for hybrid donor and gate-defined quantum dot devices.

preprint2014arXiv

Efficient self-consistent quantum transport simulator for quantum devices

We present a self-consistent one-dimensional (1D) quantum transport simulator based on the Contact Block Reduction (CBR) method, aiming for very fast and robust transport simulation of 1D quantum devices. Applying the general CBR approach to 1D open systems results in a set of very simple equations that are derived and given in detail for the first time. The charge self-consistency of the coupled CBR-Poisson equations is achieved by using the predictor-corrector iteration scheme with the optional Anderson acceleration. In addition, we introduce a new way to convert an equilibrium electrostatic barrier potential calculated from an external simulator to an effective doping profile, which is then used by the CBR-Poisson code for transport simulation of the barrier under non-zero biases. The code has been applied to simulate the quantum transport in a double barrier structure and across a tunnel barrier in a silicon double quantum dot. Extremely fast self-consistent 1D simulations of the differential conductance across a tunnel barrier in the quantum dot show better qualitative agreement with experiment than non-self-consistent simulations.

preprint2014arXiv

Microwave-driven coherent operations of a semiconductor quantum dot charge qubit

A most intuitive realization of a qubit is a single electron charge sitting at two well-defined positions, such as the left and right sides of a double quantum dot. This qubit is not just simple but also has the potential for high-speed operation, because of the strong coupling of electric fields to the electron. However, charge noise also couples strongly to this qubit, resulting in rapid dephasing at nearly all operating points, with the exception of one special 'sweet spot'. Fast dc voltage pulses have been used to manipulate semiconductor charge qubits, but these previous experiments did not achieve high-fidelity control, because dc gating requires excursions away from the sweet spot. Here, by using resonant ac microwave driving, we achieve coherent manipulation of a semiconductor charge qubit, demonstrating a Rabi frequency of up to 2GHz, a value approaching the intrinsic qubit frequency of 4.5GHz. Z-axis rotations of the qubit are well-protected at the sweet spot, and by using ac gating, we demonstrate the same protection for rotations about arbitrary axes in the X-Y plane of the qubit Bloch sphere. We characterize operations on the qubit using two independent tomographic approaches: standard process tomography and a newly developed method known as gate set tomography. Both approaches show that this qubit can be operated with process fidelities greater than 86% with respect to a universal set of unitary single-qubit operations.

preprint2014arXiv

QCAD Simulation and Optimization of Semiconductor Quantum Dots

We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling multi-dimensional quantum devices, particularly silicon multi-quantum dots (QDs) developed for quantum bits (qubits). This finite-element simulator has three differentiating features: (i) its core contains nonlinear Poisson, effective mass Schrodinger, and Configuration Interaction solvers that have massively parallel capability for high simulation throughput, and can be run individually or combined self-consistently for 1D/2D/3D quantum devices; (ii) the core solvers show superior convergence even at near-zero-Kelvin temperatures, which is critical for modeling quantum computing devices; and (iii) it interfaces directly with the full-featured optimization engine Dakota. In this work, we describe the capabilities and implementation of the QCAD simulation tool, and show how it can be used to both analyze existing experimental QD devices through capacitance calculations, and aid in the design of few-electron multi-QDs. In particular, we observe that computed capacitances are in rough agreement with experiment, and that quantum confinement increases capacitance when the number of electrons is fixed in a quantum dot. Coupling of QCAD with the optimizer Dakota allows for rapid identification and improvement of device layouts that are likely to exhibit few-electron quantum dot characteristics.

preprint2014arXiv

Spontaneous emission in a silicon charge qubit

The interaction between a qubit and its environment provides a channel for energy relaxation which has an energy-dependent timescale governed by the specific coupling mechanism. We measure the rate of inelastic decay in a Si MOS double quantum dot (DQD) charge qubit through sensing the charge state's response to non-adiabatic driving of its excited state population. The charge distribution is sensed remotely in the weak measurement regime. We extract emission rates down to kHz frequencies by measuring the variation of the non-equilibrium charge occupancy as a function of amplitude and dwell times between non-adiabatic pulses. Our measurement of the energy-dependent relaxation rate provides a fingerprint of the relaxation mechanism, indicating that relaxation rates for this Si MOS DQD are consistent with coupling to deformation acoustic phonons.

preprint2013arXiv

Four-component united-atom model of bitumen

We propose a four-component molecular model of bitumen. The model includes realistic chemical constituents and introduces a coarse-graining level that suppresses the highest frequency modes. Molecular dynamics simulations of the model are being carried out using Graphic-Processor-Units based software in time spans in order of microseconds, and this enables the study of slow relaxation processes characterizing bitumen. This paper focuses on the high-temperature dynamics as expressed through the mean-square displacement, the stress autocorrelation function, and rotational relaxation. The diffusivity of the individual molecules changes little as a function of temperature and reveals distinct dynamical time scales as a result of the different constituents in the system. Different time scales are also observed for the rotational relaxation. The stress autocorrelation function features a slow non-exponential decay for all temperatures studied. From the stress autocorrelation function, the shear viscosity and shear modulus are evaluated at the highest temperature, showing a viscous response at frequencies below 100 MHz. The model predictions of viscosity and diffusivities are compared to experimental data, giving reasonable agreement. The model shows that the asphaltene, resin and resinous oil tend to form nano-aggregates. The characteristic dynamical relaxation time of these aggregates is different from the homogeneously distributed parts of the system, leading to strong dynamical heterogeneity.

preprint2013arXiv

Robust, self-consistent, closed-form tomography of quantum logic gates on a trapped ion qubit

We introduce and demonstrate experimentally: (1) a framework called "gate set tomography" (GST) for self-consistently characterizing an entire set of quantum logic gates on a black-box quantum device; (2) an explicit closed-form protocol for linear-inversion gate set tomography (LGST), whose reliability is independent of pathologies such as local maxima of the likelihood; and (3) a simple protocol for objectively scoring the accuracy of a tomographic estimate without reference to target gates, based on how well it predicts a set of testing experiments. We use gate set tomography to characterize a set of Clifford-generating gates on a single trapped-ion qubit, and compare the performance of (i) standard process tomography; (ii) linear gate set tomography; and (iii) maximum likelihood gate set tomography.

preprint2013arXiv

Six-electron semiconductor double quantum dot qubits

We consider a double-quantum-dot (DQD) qubit which contains six electrons instead of the usual one or two. In this spin qubit, quantum information is encoded in a low-lying singlet-triplet space much as in the case of a two-electron DQD qubit. We find that initialization, manipulation, and read- out can be performed similarly to the two-electron case, and that energy gaps remain large enough that these operations can be performed robustly. We consider DQD potentials with parameters chosen to be representative of current experimental capabilities. Results are obtained using two complementary full configuration interaction methods.

preprint2012arXiv

A many-electron tight binding method for the analysis of quantum dot systems

We present a method which computes many-electron energies and eigenfunctions by a full configuration interaction which uses a basis of atomistic tight-binding wave functions. This approach captures electron correlation as well as atomistic effects, and is well suited to solid state quantum dot systems containing few electrons, where valley physics and disorder contribute significantly to device behavior. Results are reported for a two-electron silicon double quantum dot as an example.

preprint2011arXiv

Configuration interaction calculations of the controlled phase gate in double quantum dot qubits

We consider qubit coupling resulting from the capacitive coupling between two double quantum dot (DQD) single-triplet qubits. Calculations of the coupling when the two DQDs are detuned symmetrically or asymmetrically are performed using a full configuration interaction (CI). The full CI reveals behavior that is not observed by more commonly used approximations such as Heitler London or Hund Mulliken, particularly related to the operation of both DQDs in the (0,2) charge sector. We find that there are multiple points in detuning-space where a two-qubit entangling gate can be realized, and that trade-offs between coupling magnitude and sensitivity to fluctuations in detuning make a case for operating the gate in the (0,2) regime not commonly considered.

preprint2011arXiv

Implications of Electronics Constraints for Solid-State Quantum Error Correction and Quantum Circuit Failure Probability

In this paper we present the impact of classical electronics constraints on a solid-state quantum dot logical qubit architecture. Constraints due to routing density, bandwidth allocation, signal timing, and thermally aware placement of classical supporting electronics significantly affect the quantum error correction circuit's error rate. We analyze one level of a quantum error correction circuit using nine data qubits in a Bacon-Shor code configured as a quantum memory. A hypothetical silicon double quantum dot quantum bit (qubit) is used as the fundamental element. A pessimistic estimate of the error probability of the quantum circuit is calculated using the total number of gates and idle time using a provably optimal schedule for the circuit operations obtained with an integer program methodology. The micro-architecture analysis provides insight about the different ways the electronics impact the circuit performance (e.g., extra idle time in the schedule), which can significantly limit the ultimate performance of any quantum circuit and therefore is a critical foundation for any future larger scale architecture analysis.

preprint2011arXiv

Voltage controlled exchange energies of a two electron silicon double quantum dot with and without charge defects in the dielectric

Quantum dots are artificial atoms used for a multitude of purposes. Charge defects are commonly present and can significantly perturb the designed energy spectrum and purpose of the dots. Voltage controlled exchange energy in silicon double quantum dots (DQD) represents a system that is very sensitive to charge position and is of interest for quantum computing. We calculate the energy spectrum of the silicon double quantum dot system using a full configuration interaction that uses tight binding single particle wavefunctions. This approach allows us to analyze atomic scale charge perturbations of the DQD while accounting for the details of the complex momentum space physics of silicon (i.e., valley and valley-orbit physics). We analyze how the energy levels and exchange curves for a DQD are affected by nearby charge defects at various positions relative to the dot, which are consistent with defects expected in the metal-oxide-semiconductor system.

preprint2010arXiv

A configuration interaction analysis of exchange in double quantum dots

We describe in detail a full configuration interaction (CI) method designed to analyze systems of quantum dots. This method is capable of exploring large regions of parameter space, like more approximate approaches such as Heitler London and Hund Mulliken, though it is not limited to weakly coupled dots. In particular, this method is well-suited to the analysis of solid state quantum-dot-based qubits, and we consider the case of a double quantum dot (DQD) singlet-triplet qubit. Past analyses have used techniques which are either substantially restricted in the regimes they can be used, or device specific and unsuited to exploration of a large regions of parameter space. We analyze how the DQD exchange energy, which is central to the operation of qubit rotation gates, depends on a generic set of system parameters including magnetic field, DQD detuning, dot size, and dot separation. We discuss the implications of these results to the construction of real devices. We provide a benchmark of the CI by directly comparing results from the CI method with exact results for two electrons in a single parabolic potential (dot).

preprint2010arXiv

Implications of Simultaneous Requirements for Low Noise Exchange Gates in Double Quantum Dots

Achieving low-error, exchange-interaction operations in quantum dots for quantum computing imposes simultaneous requirements on the exchange energy's dependence on applied voltages. A double quantum dot (DQD) qubit, approximated with a quadratic potential, is solved using a full configuration interaction method. This method is more accurate than Heitler-London and Hund-Mulliken approaches and captures new and significant qualitative behavior. We show that multiple regimes can be found in which the exchange energy's dependence on the bias voltage between the dots is compatible with current quantum error correction codes and state-of-the-art electronics. Identifying such regimes may prove valuable for the construction and operation of quantum gates that are robust to charge fluctuations, particularly in the case of dynamically corrected gates.

preprint2009arXiv

Search for Ferromagnetism in doped semiconductors in the absence of transition metal ions

In contrast to semiconductors doped with transition metal magnetic elements, which become ferromagnetic at temperatures below ~ 100K, semiconductors doped with non-magnetic ions (e.g. silicon doped with phosphorous) have not shown evidence of ferromagnetism down to millikelvin temperatures. This is despite the fact that for low densities the system is expected to be well modeled by the Hubbard model, which is predicted to have a ferromagnetic ground state at T=0 on 2- or 3-dimensional bipartite lattices in the limit of strong correlation near half-filling. We examine the impurity band formed by hydrogenic centers in semiconductors at low densities, and show that it is described by a generalized Hubbard model which has, in addition to strong electron-electron interaction and disorder, an intrinsic electron-hole asymmetry. With the help of mean field methods as well as exact diagonalization of clusters around half filling, we can establish the existence of a ferromagnetic ground state, at least on the nanoscale, which is more robust than that found in the standard Hubbard model. This ferromagnetism is most clearly seen in a regime inaccessible to bulk systems, but attainable in quantum dots and 2D heterostructures. We present extensive numerical results for small systems that demonstrate the occurrence of high-spin ground states in both periodic and positionally disordered 2D systems. We consider how properties of real doped semiconductors, such as positional disorder and electron-hole asymmetry, affect the ground state spin of small 2D systems. We also discuss the relationship between this work and diluted magnetic semiconductors, such as Ga_(1-x)Mn_(x)As, which though disordered, show ferromagnetism at relatively high temperatures.

preprint2007arXiv

Modulated phases in magnetic models frustrated by long-range interactions

We study an Ising model in one dimension with short range ferromagnetic and long range (power law) antiferromagnetic interactions. We show that the zero temperature phase diagram in a (longitudinal) field H involves a sequence of up and down domains whose size varies continuously with H, between -H_c and H_c which represent the edge of the ferromagnetic up and down phases. The implications of long range interaction in many body systems are discussed.