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Ella Gale

Ella Gale appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Emerging Technologiescond-mat.mtrl-sciNeural and Evolutionary Computingphysics.chem-phcond-mat.mes-hallHardware ArchitectureBiological PhysicsRoboticsArtificial Intelligencecond-mat.otherphysics.comp-phSoundSystems and Control

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Published work

22 published item(s)

preprint2016arXiv

Non-ideal memristors for a non-ideal world

Memristors have pinched hysteresis loops in the $V-I$ plane. Ideal memristors are everywhere non-linear, cross at zero and are rotationally symmetric. In this paper we extend memristor theory to produce different types of non-ideality and find that: including a background current (such as an ionic current) moves the crossing point away from zero; including a degradation resistance (that increases with experimental time) leads to an asymmetry; modelling a low resistance filament in parallel describes triangular $V-I$ curves with a straight-line low resistance state. A novel measurement of hysteresis asymmetry was introduced based on hysteresis and it was found that which lobe was bigger depended on the size of the breaking current relative to the memristance. The hysteresis varied differently with each type of non-ideality, suggesting that measurements of several device I-V curves and calculation of these parameters could give an indication of the underlying mechanism.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

TiO$_2$-based Memristors and ReRAM: Materials, Mechanisms and Models (a Review)

The memristor is the fundamental non-linear circuit element, with uses in computing and computer memory. ReRAM (Resistive Random Access Memory) is a resistive switching memory proposed as a non-volatile memory. In this review we shall summarise the state of the art for these closely-related fields, concentrating on titanium dioxide, the well-utilised and archetypal material for both. We shall cover material properties, switching mechanisms and models to demonstrate what ReRAM and memristor scientists can learn from each other and examine the outlook for these technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Evolving Spiking Networks with Variable Resistive Memories

Neuromorphic computing is a brainlike information processing paradigm that requires adaptive learning mechanisms. A spiking neuro-evolutionary system is used for this purpose; plastic resistive memories are implemented as synapses in spiking neural networks. The evolutionary design process exploits parameter self-adaptation and allows the topology and synaptic weights to be evolved for each network in an autonomous manner. Variable resistive memories are the focus of this research; each synapse has its own conductance profile which modifies the plastic behaviour of the device and may be altered during evolution. These variable resistive networks are evaluated on a noisy robotic dynamic-reward scenario against two static resistive memories and a system containing standard connections only. Results indicate that the extra behavioural degrees of freedom available to the networks incorporating variable resistive memories enable them to outperform the comparative synapse types.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Single Memristor Logic Gates: From NOT to a Full Adder

Memristors have been suggested as a novel route to neuromorphic computing based on the similarity between them and neurons (specifically synapses and ion pumps). The d.c. action of the memristor is a current spike which imparts a short-term memory to the device. Here it is demonstrated that this short-term memory works exactly like habituation (e.g. in \emph{Aplysia}). We elucidate the physical rules, based on energy conservation, governing the interaction of these current spikes: summation, `bounce-back', directionality and `diminishing returns'. Using these rules, we introduce 4 different logical systems to implement sequential logic in the memristor and demonstrate how sequential logic works by instantiating a NOT gate, an AND gate, an XOR gate and a Full Adder with a single memristor. The Full Adder makes use of the memristor's short-term memory to add together three binary values and outputs the sum, the carry digit and even the order they were input in. A memristor full adder also outputs the arithmetical sum of bits, allowing for a logically (but not physically) reversible system. Essentially, we can replace an input/output port with an extra time-step, allowing a single memristor to do a hither-to unexpectedly large amount of computation. This makes up for the memristor's slow operation speed and may relate to how neurons do a similarly-large computation with such slow operations speeds. We propose that using spiking logic, either in gates or as neuron-analogues, with plastic rewritable connections between them, would allow the building of a neuromorphic computer.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Boolean Logic Gates From A Single Memristor Via Low-Level Sequential Logic

By using the memristor's memory to both store a bit and perform an operation with a second input bit, simple Boolean logic gates have been built with a single memristor. The operation makes use of the interaction of current spikes (occasionally called current transients) found in both memristors and other devices. The sequential time-based logic methodology allows two logical input bits to be used on a one-port by sending the bits separated in time. The resulting logic gate is faster than one relying on memristor's state switching, low power and requires only one memristor. We experimentally demonstrate working OR and XOR gates made with a single flexible Titanium dioxide sol-gel memristor.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Connecting Spiking Neurons to a Spiking Memristor Network Changes the Memristor Dynamics

Memristors have been suggested as neuromorphic computing elements. Spike-time dependent plasticity and the Hodgkin-Huxley model of the neuron have both been modelled effectively by memristor theory. The d.c. response of the memristor is a current spike. Based on these three facts we suggest that memristors are well-placed to interface directly with neurons. In this paper we show that connecting a spiking memristor network to spiking neuronal cells causes a change in the memristor network dynamics by: removing the memristor spikes, which we show is due to the effects of connection to aqueous medium; causing a change in current decay rate consistent with a change in memristor state; presenting more-linear $I-t$ dynamics; and increasing the memristor spiking rate, as a consequence of interaction with the spiking neurons. This demonstrates that neurons are capable of communicating directly with memristors, without the need for computer translation.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Design of a Hybrid Robot Control System using Memristor-Model and Ant-Inspired Based Information Transfer Protocols

It is not always possible for a robot to process all the information from its sensors in a timely manner and thus quick and yet valid approximations of the robot's situation are needed. Here we design hybrid control for a robot within this limit using algorithms inspired by ant worker placement behaviour and based on memristor-based non-linearity.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Does the D.C. Response of Memristors Allow Robotic Short-Term Memory and a Possible Route to Artificial Time Perception?

Time perception is essential for task switching, and in the mammalian brain appears alongside other processes. Memristors are electronic components used as synapses and as models for neurons. The d.c. response of memristors can be considered as a type of short-term memory. Interactions of the memristor d.c. response within networks of memristors leads to the emergence of oscillatory dynamics and intermittent spike trains, which are similar to neural dynamics. Based on this data, the structure of a memristor network control for a robot as it undergoes task switching is discussed and it is suggested that these emergent network dynamics could improve the performance of role switching and learning in an artificial intelligence and perhaps create artificial time perception.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Emergent Spiking in Non-Ideal Memristor Networks

Memristors have uses as artificial synapses and perform well in this role in simulations with artificial spiking neurons. Our experiments show that memristor networks natively spike and can exhibit emergent oscillations and bursting spikes. Networks of near-ideal memristors exhibit behaviour similar to a single memristor and combine in circuits like resistors do. Spiking is more likely when filamentary memristors are used or the circuits have a higher degree of compositional complexity (i.e. a larger number of anti-series or anti-parallel interactions). 3-memristor circuits with the same memristor polarity (low compositional complexity) are stabilised and do not show spiking behaviour. 3-memristor circuits with anti-series and/or anti-parallel compositions show richer and more complex dynamics than 2-memristor spiking circuits. We show that the complexity of these dynamics can be quantified by calculating (using partial auto-correlation functions) the minimum order auto-regression function that could fit it. We propose that these oscillations and spikes may be similar phenomena to brainwaves and neural spike trains and suggest that these behaviours can be used to perform neuromorphic computation.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Is Spiking Logic the Route to Memristor-Based Computers?

Memristors have been suggested as a novel route to neuromorphic computing based on the similarity between neurons (synapses and ion pumps) and memristors. The D.C. action of the memristor is a current spike, which we think will be fruitful for building memristor computers. In this paper, we introduce 4 different logical assignations to implement sequential logic in the memristor and introduce the physical rules, summation, `bounce-back', directionality and `diminishing returns', elucidated from our investigations. We then demonstrate how memristor sequential logic works by instantiating a NOT gate, an AND gate and a Full Adder with a single memristor. The Full Adder makes use of the memristor's memory to add three binary values together and outputs the value, the carry digit and even the order they were input in.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Slime Mould Memristors

In laboratory experiments we demonstrate that protoplasmic tubes of acellular slime mould \emph{Physarum polycephalum} show current versus voltage profiles consistent with memristive systems and that the effect is due to the living protoplasm of the mould. This complements previous findings on memristive properties of other living systems (human skin and blood) and contributes to development of self-growing bio-electronic circuits. Distinctive asymmetric $V$-$I$ curves which were occasionally observed when the internal current is on the same order as the driven current, are well-modelled by the concept of active memristors.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

The Memory-Conservation Theory of Memristance

The memristor, the recently discovered fundamental circuit element, is of great interest for neuromorphic computing, nonlinear electronics and computer memory. It is usually modelled either using Chua's equations, which lack material device properties, or using Strukov's phenomenological model (or models derived from it), which deviates from Chua's definitions due to the lack of a magnetic flux term. It is shown that by modelling the magnetostatics of the memory-holding ionic current (oxygen vacancies in the Strukov memristor), the memristor's magnetic flux can be identified as the flux arising from the ions. This leads to a novel theory of memristance consisting of two components: 1. A memory function which describes how the memristance, as felt by the ions, affects the conducting electrons located in the `on' part of the device; 2. A conservation function which describes the time-varying resistance in the `off' part of the device. This model allows for a straight-forward incorporation of the ions within the electronic theory and relates Chua's constitutive definition of a memristor with device material properties for the first time.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

The Short-term Memory (D.C. Response) of the Memristor Demonstrates the Causes of the Memristor Frequency Effect

A memristor is often identified by showing its distinctive pinched hysteresis curve and testing for the effect of frequency. The hysteresis size should relate to frequency and shrink to zero as the frequency approaches infinity. Although mathematically understood, the material causes for this are not well known. The d.c. response of the memristor is a decaying curve with its own timescale. We show via mathematical reasoning that this decaying curve when transformed to a.c. leads to the frequency effect by considering a descretized curve. We then demonstrate the validity of this approach with experimental data from two different types of memristors.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Uniform and Piece-wise Uniform Fields in Memristor Models

The Strukov model was the phenomenological model that accompanied the announcement of the first recognised physical instantiation of the memristor and, as such, it has been widely used. This model described the motion of a boundary, $w$, between two types of inter-converting material, $R_{\mathrm{off}}$ and $R_{\mathrm{on}}$, seemingly under a uniform field across the entire device. In fact, what was intended was a field with a discontinuity at $w$, that was uniform between $0<x<w$. In this paper we show that the discontinuity is required for the Strukov model derivation to be completed, and thus the derivation as given does not describe a situation with a uniform field across the entire device. The discontinuity can be described as a Heaviside function, $H$, located on $w$, for which there are three common single-valued approximations for $H(w)$. The Strukov model as intended includes an approximation for the Heaviside function (the field is taken to be the same as that across the $R_{\mathrm{on}}$ part of the device). We compare approximations and give solutions. We then extend the description of the field to a more-realistic continuously varying sigmoidal transition between two uniform fields and demonstrate that the centro-symmetric approximation model (taking the field as being the average of the fields across $R_{\mathrm{on}}$ and $R_{\mathrm{off}}$) is a better single-point model of that situation: the other two approximations over or underestimate the field.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Beyond Markov Chains, Towards Adaptive Memristor Network-based Music Generation

We undertook a study of the use of a memristor network for music generation, making use of the memristor's memory to go beyond the Markov hypothesis. Seed transition matrices are created and populated using memristor equations, and which are shown to generate musical melodies and change in style over time as a result of feedback into the transition matrix. The spiking properties of simple memristor networks are demonstrated and discussed with reference to applications of music making. The limitations of simulating composing memristor networks in von Neumann hardware is discussed and a hardware solution based on physical memristor properties is presented.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Comparison of Ant-Inspired Gatherer Allocation Approaches using Memristor-Based Environmental Models

Memristors are used to compare three gathering techniques in an already-mapped environment where resource locations are known. The All Site model, which apportions gatherers based on the modeled memristance of that path, proves to be good at increasing overall efficiency and decreasing time to fully deplete an environment, however it only works well when the resources are of similar quality. The Leaf Cutter method, based on Leaf Cutter Ant behaviour, assigns all gatherers first to the best resource, and once depleted, uses the All Site model to spread them out amongst the rest. The Leaf Cutter model is better at increasing resource influx in the short-term and vastly out-performs the All Site model in a more varied environments. It is demonstrated that memristor based abstractions of gatherer models provide potential methods for both the comparison and implementation of agent controls.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Drop-coated Titanium Dioxide Memristors

The fabrication of memristors by drop-coating sol-gel Ti(OH)$_4$ solution onto either aluminium foil or sputter-coated aluminium on plastic is presented. The gel layer is thick, 37$μ$m, but both devices exhibit good memristance I-V profiles. The drop coated aluminium foil memristors compare favourably with the sputter-coated ones, demonstrating an expansion in the accessibility of memristor fabrication. A comparison between aluminium and gold for use as the sputter-coated electrodes shows that aluminium is the better choice as using gold leads to device failure. The devices do not require a forming step.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Observation, Characterization and Modeling of Memristor Current Spikes

Memristors have been compared to neurons (usually specifically the synapses) since 1976 but no experimental evidence has been offered for support for this position. Here we highlight that memristors naturally form fast-response, highly reproducible and repeatable current spikes which can be used in voltage-driven neuromorphic architecture. Ease of fitting current spikes with memristor theories both suggests that the spikes are part of the memristive effect and provides modeling capability for the design of neuromorphic circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

The effect of changing electrode metal on solution-processed flexible titanium dioxide memristors

Flexible solution processed memristors show different behaviour dependent on the choice of electrode material. Use of gold for both electrodes leads to switchable WORM (Write Once Read Many times) resistive devices. Use of aluminium for both electrodes increases the richness of behaviour allowing both curved and triangular memristive switching resistance memories. A comparison device with an aluminium bottom electrode and gold top electrode only exhibited significant memristive resistance switching when the aluminium electrode was the cathode, suggesting that the electrode is acting as a source/sink of oxygen anions. When the gold electrode was the cathode this electrode was deformed by oxygen evolution. These results demonstrate that aluminium is helpful for stabilising and promoting memristive behaviour in sol-gel TiO$_2$ devices and that changing electrodes from aluminium to gold creates fundamentally different device characteristics.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Evolution of Plastic Learning in Spiking Networks via Memristive Connections

This article presents a spiking neuroevolutionary system which implements memristors as plastic connections, i.e. whose weights can vary during a trial. The evolutionary design process exploits parameter self-adaptation and variable topologies, allowing the number of neurons, connection weights, and inter-neural connectivity pattern to emerge. By comparing two phenomenological real-world memristor implementations with networks comprised of (i) linear resistors (ii) constant-valued connections, we demonstrate that this approach allows the evolution of networks of appropriate complexity to emerge whilst exploiting the memristive properties of the connections to reduce learning time. We extend this approach to allow for heterogeneous mixtures of memristors within the networks; our approach provides an in-depth analysis of network structure. Our networks are evaluated on simulated robotic navigation tasks; results demonstrate that memristive plasticity enables higher performance than constant-weighted connections in both static and dynamic reward scenarios, and that mixtures of memristive elements provide performance advantages when compared to homogeneous memristive networks.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Filamentary Extension of the Mem-Con theory of Memristance and its Application to Titanium Dioxide Sol-Gel Memristors

Titanium dioxide sol-gel memristors have two different modes of operation, believed to be dependent on whether there is bulk memristance, i.e. memristance throughout the whole volume or filamentary memristance, i.e. memristance caused by the connection of conducting filaments. The mem-con theory of memristance is based on the drift of oxygen vacancies rather than that of conducting electrons and has been previously used to describe bulk memristance in several devices. Here, the mem-con theory is extended to model memristance caused by small filaments of low resistance titanium dioxide and it compares favorably to experimental results for filamentary memristance in sol-gel devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

The Effect of Electrode Size on Memristor Properties: An Experimental and Theoretical Study

The width of the electrodes is not included in the current phenomenological models of memristance, but is included in the memory-conservation (mem-con) theory of memristance. An experimental study of the effect of changing the top electrode width was performed on titanium dioxide sol-gel memristors. It was demonstrated that both the on resistance, Ron, and the off resistance, Roff, decreased with increasing electrode size. The memory function part of the mem-con model could fit the relationship between Ron and electrode size. Similarly, the conservation function fits the change in Roff. The experimentally measured hysteresis did not fit the phenomenological model's predictions. Instead the size of the hysteresis increased with increasing electrode size, and correlated well to decreasing Ron.

0 citations0 reviewsNo code linkedOpen access