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Elias Lahoud

Elias Lahoud appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2016arXiv

Internal pressure in superconducting Cu intercalated Bi$_2$Se$_3$

Angle-resolved photoemission spectroscopy is used to study the band-structure of superconducting electrochemically intercalated Cu$_x$Bi$_2$Se$_3$. We find that in these samples the band-gap at the $Γ$ point is much larger than in pristine Bi$_2$Se$_3$. Comparison to the results of band-structure calculations indicates that the origin of this large gap is internal stress caused by disorder created by the Cu intercalation. We suggest that the internal pressure may be necessary for superconductivity in Cu$_x$Bi$_2$Se$_3$.

preprint2014arXiv

Emergent Novel Metallic State in a Disordered 2D Mott Insulator

It is well established that for non-interacting electrons, increasing disorder drives a metal into a gapless localized Anderson insulator. While in three dimensions a threshold in disorder must be crossed for the transition, in two dimensions and lower, the smallest amount of disorder destabilizes the metal. The nature of the metal-insulator transition in an interacting system remains unresolved. Here we explore the effect of disorder on a strongly correlated Mott insulator without changing the carrier concentration. Angle resolved photoemission spectroscopy (ARPES) measurements on copper intercalated single crystals of the layered dichalcogenide 1T-TaS2 reveal the presence of new delocalized states within the Mott gap. This is the first experimental realization of a novel disorder-induced metal that was theoretically predicted to exist between the Mott insulator and Anderson insulator.