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Elias Lahoud

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2 publications

preprint2016arXiv

Internal pressure in superconducting Cu intercalated Bi2_2Se3_3

Angle-resolved photoemission spectroscopy is used to study the band-structure of superconducting electrochemically intercalated Cux_xBi2_2Se3_3. We find that in these samples the band-gap at the ΓΓ point is much larger than in pristine Bi2_2Se3_3. Comparison to the results of band-structure calculations indicates that the origin of this large gap is internal stress caused by disorder created by the Cu intercalation. We suggest that the internal pressure may be necessary for superconductivity in Cux_xBi2_2Se3_3.

preprint2014arXiv

Emergent Novel Metallic State in a Disordered 2D Mott Insulator

It is well established that for non-interacting electrons, increasing disorder drives a metal into a gapless localized Anderson insulator. While in three dimensions a threshold in disorder must be crossed for the transition, in two dimensions and lower, the smallest amount of disorder destabilizes the metal. The nature of the metal-insulator transition in an interacting system remains unresolved. Here we explore the effect of disorder on a strongly correlated Mott insulator without changing the carrier concentration. Angle resolved photoemission spectroscopy (ARPES) measurements on copper intercalated single crystals of the layered dichalcogenide 1T-TaS2 reveal the presence of new delocalized states within the Mott gap. This is the first experimental realization of a novel disorder-induced metal that was theoretically predicted to exist between the Mott insulator and Anderson insulator.

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