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Kirby K. H. Smithe

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cond-mat.mes-hall cond-mat.mtrl-sci physics.app-ph

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preprint2020arXiv

High Current Density in Monolayer MoS$_2$ Doped by AlO$_x$

Semiconductors require stable doping for applications in transistors, optoelectronics, and thermoelectrics. However, this has been challenging for two-dimensional (2D) materials, where existing approaches are either incompatible with conventional semiconductor processing or introduce time-dependent, hysteretic behavior. Here we show that low temperature (< 200$^\circ$ C) sub-stoichiometric AlO$_x$ provides a stable n-doping layer for monolayer MoS$_2$, compatible with circuit integration. This approach achieves carrier densities > 2x10$^{13}$ 1/cm$^2$, sheet resistance as low as ~7 kOhm/sq, and good contact resistance ~480 Ohm.um in transistors from monolayer MoS$_2$ grown by chemical vapor deposition. We also reach record current density of nearly 700 uA/um (>110 MA/cm$^2$) in this three-atom-thick semiconductor while preserving transistor on/off current ratio > $10^6$. The maximum current is ultimately limited by self-heating and could exceed 1 mA/um with better device heat sinking. With their 0.1 nA/um off-current, such doped MoS$_2$ devices approach several low-power transistor metrics required by the international technology roadmap

preprint2020arXiv

Temperature Dependent Thermal Boundary Conductance of Monolayer MoS$_2$ by Raman Thermometry

The electrical and thermal behavior of nanoscale devices based on two-dimensional (2D) materials is often limited by their contacts and interfaces. Here we report the temperature-dependent thermal boundary conductance (TBC) of monolayer MoS$_2$ with AlN and SiO$_2$, using Raman thermometry with laser-induced heating. The temperature-dependent optical absorption of the 2D material is crucial in such experiments, which we characterize here for the first time above room temperature. We obtain TBC ~ 15 MWm$^-$$^2$K$^-$$^1$ near room temperature, increasing as ~ T$^0$$^.$$^6$$^5$ in the range 300 - 600 K. The similar TBC of MoS$_2$ with the two substrates indicates that MoS$_2$ is the "softer" material with weaker phonon irradiance, and the relatively low TBC signifies that such interfaces present a key bottleneck in energy dissipation from 2D devices. Our approach is needed to correctly perform Raman thermometry of 2D materials, and our findings are key for understanding energy coupling at the nanoscale.

preprint2016arXiv

Intrinsic Electrical Transport and Performance Projections of Synthetic Monolayer MoS2 Devices

We demonstrate monolayer MoS2 grown by chemical vapor deposition (CVD) with transport properties comparable to those of the best exfoliated devices over a wide range of carrier densities (up to ~10^13 1/cm^2) and temperatures (80-500 K). Transfer length measurements reveal monolayer mobility of ~20 cm2/V/s on SiO2 substrates at 300 K and practical carrier densities (>2x10^12 1/cm^2). We also demonstrate the highest current density reported to date (~270 uA/um or 44 MA/cm^2) at 300 K for an 80 nm device from CVD-grown monolayer MoS2. Using simulations, we discuss what improvements of monolayer MoS2 are still required to meet technology roadmap requirements for low power (LP) and high performance (HP) applications. Such results are an important step towards large-area electronics based on monolayer semiconductors.