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Edward McCann

Edward McCann contributes to research discovery and scholarly infrastructure.

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Published work

12 published item(s)

preprint2026arXiv

A non-Hermitian Su-Schrieffer-Heeger model with the energy levels of free parafermions

Using a parent Hermitian tight-binding model on a bipartite lattice with chiral symmetry, we theoretically generate non-Hermitian models for free fermions with $p$ orbitals per unit cell satisfying a complex generalization of chiral symmetry. The $p$ complex energy bands in $k$ space are given by a common $k$-dependent real factor, determined by the bands of the parent model, multiplied by the $p$th roots of unity. When the parent model is the Su-Schrieffer-Heeger (SSH) model, the single-particle energy levels are the same as those of free parafermion solutions to Baxter's non-Hermitian clock model. This construction relies on fully unidirectional hopping to create Bloch Hamiltonians with the form of generalized permutation matrices, but we also describe the effect of partial unidirectional hopping. For fully bidirectional hopping, the Bloch Hamiltonians are Hermitian and may be separated into even and odd parity blocks with respect to inversion of the orbitals within the unit cell. Partially unidirectional hopping breaks the inversion symmetry and mixes the even and odd blocks, and the real energy spectrum evolves into a complex one as the degree of unidirectionality increases, with details determined by the topology of the parent model and the number of orbitals per unit cell, $p$. We describe this process in detail for $p=3$ and $p=4$ with the SSH model. We also apply our approach to graphene, and show that $AA$-stacked bilayer graphene evolves into a square root Hamiltonian of monolayer graphene with the introduction of unidirectional hopping. We show that higher-order exceptional points occur at edge states and solitons in the non-Hermitian SSH model, and at the Dirac point of non-Hermitian graphene.

preprint2016arXiv

Interaction-induced insulating state in thick multilayer graphene

Close to charge neutrality, the low-energy properties of high-quality suspended devices based on atomically thin graphene layers are determined by electron-electron interactions. Bernal-stacked layers, in particular, have shown a remarkable even-odd effect with mono- and tri-layers remaining gapless conductors, and bi- and tetra-layers becoming gapped insulators. These observations $-$at odds with the established notion that (Bernal) trilayers and thicker multilayers are semi-metals$-$ have resulted in the proposal of a physical scenario leading to a surprising prediction, namely that even-layered graphene multilayers remain insulating irrespective of their thickness. Here, we present data from two devices that conform ideally to this hypothesis, exhibiting the behavior expected for Bernal-stacked hexa and octalayer graphene. Despite their large thickness, these multilayers are insulating for carrier density |n|<2-3x10$^{10}$cm$^{-2}$, possess an energy gap of approximately 1.5 meV at charge neutrality (in virtually perfect agreement with what is observed in bi and tetra layer graphene) and exhibit the expected integer quantum Hall effect. These findings indicate the soundness of our basic insights on the effect of electron interactions in Bernal graphene multilayers, show that graphene multilayers exhibit unusual and interesting physics that remains to be understood, and pose ever more pressing questions as to the microscopic mechanisms behind the semimetallic behavior of bulk graphite.

preprint2016arXiv

Magnetic ratchet effect in bilayer graphene

We consider the orbital effect of an in-plane magnetic field on electrons in bilayer graphene, deriving linear-in-field contributions to the low-energy Hamiltonian arising from the presence of either skew interlayer coupling or interlayer potential asymmetry, the latter being tunable by an external metallic gate. To illustrate the relevance of such terms, we consider the ratchet effect in which a dc current results from the application of an alternating electric field in the presence of an in-plane magnetic field and inversion-symmetry breaking. By comparison with recent experimental observations in monolayer graphene [C. Drexler et al., Nature Nanotech. 8, 104 (2013)], we estimate that the effect in bilayer graphene can be two orders of magnitude greater than that in monolayer, illustrating that the bilayer is an ideal material for the realization of optoelectronic effects that rely on inversion-symmetry breaking.

preprint2015arXiv

Insulating state in tetralayers reveals an even-odd interaction effect in multilayer graphene

The absence of an energy gap separating valence and conduction bands makes the low-energy electronic properties of graphene and its multi-layers sensitive to electron-electron interactions. In bilayers, for instance, interactions are predicted to open a gap at charge neutrality, turning the system into an insulator, as observed experimentally. In mono and (Bernal-stacked) trilayers, interactions, although still important, do not have an equally drastic effect, and these systems remain conducting at low temperature. It may be expected that interaction effects become weaker for thicker multilayers, whose behavior should eventually converge to that of graphite. Here we show that this expectation does not correspond to reality by investigating the case of Bernal-stacked tetralayer graphene (4LG). We reveal the occurrence of a robust insulating state in a narrow range of carrier densities around charge neutrality, incompatible with the behavior expected from the single-particle band structure. The phenomenology resembles that observed in bilayers, but the stronger conductance suppression makes the insulating state in 4LG visible at higher temperature. To account for our findings, we suggest a natural generalization of the interaction-driven, symmetry-broken states proposed for bilayers. This generalization also explains the systematic even-odd effect of interactions in Bernal-stacked layers of different thickness that is emerging from experiments, and has implications for the multilayer-to-graphite crossover.

preprint2013arXiv

The electronic properties of bilayer graphene

We review the electronic properties of bilayer graphene, beginning with a description of the tight-binding model of bilayer graphene and the derivation of the effective Hamiltonian describing massive chiral quasiparticles in two parabolic bands at low energy. We take into account five tight-binding parameters of the Slonczewski-Weiss-McClure model of bulk graphite plus intra- and interlayer asymmetry between atomic sites which induce band gaps in the low-energy spectrum. The Hartree model of screening and band-gap opening due to interlayer asymmetry in the presence of external gates is presented. The tight-binding model is used to describe optical and transport properties including the integer quantum Hall effect, and we also discuss orbital magnetism, phonons and the influence of strain on electronic properties. We conclude with an overview of electronic interaction effects.

preprint2012arXiv

Electronic properties of monolayer and bilayer graphene

The tight-binding model of electrons in graphene is reviewed. We derive low-energy Hamiltonians supporting massless Dirac-like chiral fermions and massive chiral fermions in monolayer and bilayer graphene, respectively, and we describe how their chirality is manifest in the sequencing of plateaus observed in the integer quantum Hall effect. The opening of a tuneable band gap in bilayer graphene in response to a transverse electric field is described, and we explain how Hartree theory may be used to develop a simple analytical model of screening.

preprint2012arXiv

Multilayer graphenes with mixed stacking structure: interplay of Bernal and rhombohedral stacking

We study the electronic structure of multilayer graphenes with a mixture of Bernal and rhombohedral stacking and propose a general scheme to understand the electronic band structure of an arbitrary configuration. The system can be viewed as a series of finite Bernal graphite sections connected by stacking faults. We find that the low-energy eigenstates are mostly localized in each Bernal section, and, thus, the whole spectrum is well approximated by a collection of the spectra of independent sections. The energy spectrum is categorized into linear, quadratic and cubic bands corresponding to specific eigenstates of Bernal sections. The ensemble-averaged spectrum exhibits a number of characteristic discrete structures originating from finite Bernal sections or their combinations likely to appear in a random configuration. In the low-energy region, in particular, the spectrum is dominated by frequently-appearing linear bands and quadratic bands with special band velocities or curvatures. In the higher energy region, band edges frequently appear at some particular energies, giving optical absorption edges at corresponding characteristic photon frequencies.

preprint2011arXiv

Landau level spectra and the quantum Hall effect of multilayer graphene

The Landau level spectra and the quantum Hall effect of ABA-stacked multilayer graphenes are studied in the effective mass approximation. The low-energy effective mass Hamiltonian may be partially diagonalized into an approximate block-diagonal form, with each diagonal block contributing parabolic bands except, in a multilayer with an odd number of layers, for an additional block describing Dirac-like bands with a linear dispersion. We fully include the band parameters and, taking into account the symmetry of the lattice, we analyze their affect on the block-diagonal Hamiltonian. Next-nearest layer couplings are shown to be particularly important in determining the low-energy spectrum and the phase diagram of the quantum Hall conductivity, by causing energy shifts, level anti-crossings, and valley splitting of the low-lying Landau levels.

preprint2011arXiv

z/-z Symmetry of spin-orbit coupling and weak localization in graphene

We show that the influence of spin-orbit (SO) coupling on the weak localization effect for electrons in graphene depends on the lack or presence of z/-z symmetry in the system. While for z/-z asymmetric SO coupling, disordered graphene should display a weak anti-localization behavior at lowest temperature, z/-z symmetric coupling leads to an effective saturation of decoherence time which can be partially lifted by an in-plane magnetic field, thus, tending to restore the weak localization effect.

preprint2010arXiv

Parity and valley degeneracy in multilayer graphene

We study spatial symmetry in general ABA-stacked multilayer graphene to illustrate how electronic spectra at the two valleys are related in a magnetic field. We show that the lattice of multilayers with an even number of layers, as well as that of monolayer graphene, satisfy spatial inversion symmetry, which rigorously guarantees valley degeneracy in the absence of time-reversal symmetry. A multilayer with an odd number of layers (three or more) lacks inversion symmetry, but there is another transformation imposing an approximate valley degeneracy, which arises because the low-energy Hamiltonian consists of separate monolayerlike and bilayerlike parts. We show that an external electrostatic potential generally breaks valley degeneracy in a magnetic field, in a markedly different manner in odd and even multilayers.

preprint2010arXiv

Spin-orbit coupling and broken spin degeneracy in multilayer graphene

Since the lattices of ABA-stacked graphene multilayers with an even number of layers, as well as that of monolayer graphene, satisfy spatial-inversion symmetry, their electronic bands must be spin degenerate in the presence of time-inversion symmetry. In intrinsic monolayer and bilayer graphene, when symmetry is not broken by external fields, the only spin-orbit coupling present at low energy near the corner of the Brillouin zone is the Kane-Mele term, that opens a bulk energy gap but does not break the spin degeneracy of the energy bands [C. L. Kane and E. J. Mele, Phys. Rev. Lett. 95, 226801 (2005)]. However, spin splitting is allowed in multilayers with an odd number of layers (greater than or equal to 3) because their lattices do not satisfy spatial inversion symmetry. We show that, in trilayer graphene, in addition to the Kane-Mele term, there is a second type of intrinsic spin-orbit coupling present at low energy near the corner of the Brillouin zone. It introduces a Zeeman-like spin splitting of the energy bands at each valley, with an opposite sign of the effective magnetic field in the two valleys. We estimate the magnitude of the effective field to be ~2T.

preprint2009arXiv

Trigonal warping and Berry&#39;s phase N pi in ABC-stacked multilayer graphene

The electronic band structure of ABC-stacked multilayer graphene is studied within an effective mass approximation. The electron and hole bands touching at zero energy support chiral quasiparticles characterized by Berry&#39;s phase N pi for N-layers, generalizing the low-energy band structure of monolayer and bilayer graphene. We investigate the trigonal-warping deformation of the energy bands and show that the Lifshitz transition, in which the Fermi circle breaks up into separate parts at low energy, reflects Berry&#39;s phase N pi. It is particularly prominent in trilayers, N=3, with the Fermi circle breaking into three parts at a relatively large energy that is related to next-nearest-layer coupling. For N=3, we study the effects of electrostatic potentials which vary in the stacking direction, and find that a perpendicular electric field, as well as opening an energy gap, strongly enhances the trigonal-warping effect. In magnetic fields, the N=3 Lifshitz transition is manifested as a coalescence of Landau levels into triply-degenerate levels.