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Edith Bourret-Courchesne

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cond-mat.supr-con cond-mat.mtrl-sci cond-mat.str-el

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preprint2020arXiv

Non-superconducting electronic ground state in pressurized BaFe$_2$S$_3$ and BaFe$_2$S$_{2.5}$Se$_{0.5}$

We report a comprehensive study of the spin ladder compound BaFe$_2$S$_{2.5}$Se$_{0.5}$ using neutron diffraction, inelastic neutron scattering, high pressure synchrotron diffraction, and high pressure transport techniques. We find that BaFe$_2$S$_{2.5}$Se$_{0.5}$ possesses the same $Cmcm$ structure and stripe antiferromagnetic order as does BaFe$_2$S$_3$, but with a reduced N{é}el temperature of $T_N=98$ K compared to 120 K for the undoped system, and a slightly increased ordered moment of 1.40$μ_B$ per iron. The low-energy spin excitations in BaFe$_2$S$_{2.5}$Se$_{0.5}$ are likewise similar to those observed in BaFe$_2$S$_{3}$. However, unlike the reports of superconductivity in BaFe$_2$S$_3$ below $T_c \sim 14$~K under pressures of 10~GPa or more, we observe no superconductivity in BaFe$_2$S$_{2.5}$Se$_{0.5}$ at any pressure up to 19.7~GPa. In contrast, the resistivity exhibits an upturn at low temperature under pressure. Furthermore, we show that additional high-quality samples of BaFe$_2$S$_3$ synthesized for this study likewise fail to become superconducting under pressure, instead displaying a similar upturn in resistivity at low temperature. These results demonstrate that microscopic, sample-specific details play an important role in determining the ultimate electronic ground state in this spin ladder system. We suggest that the upturn in resistivity at low temperature in both BaFe$_2$S$_3$ and BaFe$_2$S$_{2.5}$Se$_{0.5}$ may result from Anderson localization induced by S vacancies and random Se substitutions, enhanced by the quasi-one-dimensional ladder structure.

preprint2020arXiv

Structural, magnetic, and electronic evolution of the spin-ladder system BaFe$_2$S$_{3-x}$Se$_x$ with isoelectronic substitution

We report experimental studies of a series of BaFe$_2$S$_{3-x}$Se$_x$ ($0\leq x\leq3$) single crystals and powder specimens using x-ray diffraction, neutron diffraction, muon spin relaxation, and electrical transport measurements. A structural transformation from Cmcm (BaFe$_2$S$_3$) to Pnma (BaFe$_2$Se$_3$) was identified around $x = 0.7\sim 1$. Neutron diffraction measurements on the samples with $x$ = 0.2, 0.4, and 0.7 reveal that the N$é$el temperature of the stripe antiferromagnetic order is gradually suppressed from $\sim$120 to 85 K, while the magnitude of the ordered Fe$^{2+}$ moments shows very little variation. Similarly, the block antiferromagnetic order in BaFe$_2$Se$_3$ remains robust for $1.5\leq x\leq3$ with negligible variation in the ordered moment and a slight decrease of the N$é$el temperature from 250 K ($x=3$) to 225 K ($x=1.5$). The sample with $x=1$ near the Cmcm and Pnma border shows coexisting, two-dimensional, short-range stripe- and block-type antiferromagnetic correlations. The system remains insulating for all $x$, but the thermal activation gap shows an abrupt increase when traversing the boundary from the Cmcm stripe phase to the Pnma block phase. The results demonstrate that the crystal structure, magnetic order, and electronic properties are strongly coupled in the BaFe$_2$S$_{3-x}$Se$_x$ system.

preprint2019arXiv

Observation of a C-type short range antiferromagnetic order in expanded FeS

We report neutron diffraction studies of FeS single crystals obtained from Rb$_x$Fe$_{2-y}$S$_2$ single crystals via a hydrothermal method. While no $\sqrt {5}\times \sqrt {5}$ iron vacancy order or block antiferromagnetic order typical of Rb$_x$Fe$_{2-y}$S$_2$ is found in our samples, we observe $C$-type short range antiferromagnetic order with moments pointed along the $c$-axis hosted by a new phase of FeS with an expanded inter-layer spacing. The Néel temperature for this magnetic order is determined to be 165 K. Our finding of a variant FeS structure hosting this $C$-type antiferromagnetic order demonstrates that the known FeS phase synthesized in this method is in the vicinity of a magnetically ordered ground state, providing insights into understanding a variety of phenomena observed in FeS and the related FeSe$_{1-x}$S$_x$ iron chalcogenide system.

preprint2015arXiv

Effect of stoichiometric vacancies on the structure and properties of the Ga2SeTe2 compound semiconductor

Ga2SeTe2 belongs to a family of materials with large intrinsic vacancy concentrations that are being actively studied due to their potential for diverse applications that include thermoelectrics and phase-change memory. In this article, the Ga2SeTe2 structure is investigated via synchrotron x-ray diffraction, electron microscopy, and x-ray absorption experiments. Diffraction and microscopy measurements showed that the extent of vacancy ordering in Ga2SeTe2 is highly dependent on thermal annealing. It is posited that stoichiometric vacancies play a role in local atomic distortions in Ga2SeTe2 (based on the fine structure signals in the collected x-ray absorption spectra). The effect of vacancy ordering on Ga2SeTe2 material properties is also examined through band gap and Hall effect measurements, which reveal that the Ga2SeTe2 band gap redshifts by ~0.05 eV as the vacancies order and accompanied by gains in charge carrier mobility. The results serve as an encouraging example of altering material properties via intrinsic structural rearrangement as opposed to extrinsic means such as doping.

preprint2015arXiv

Elucidating the magnetic and superconducting phases in the alkali metal intercalated iron chalcogenides

The complex interdigitated phases have greatly frustrated attempts to document the basic features of the superconductivity in the alkali metal intercalated iron chalcogenides. Here, using elastic neutron scattering, energy-dispersive x-ray spectroscopy, and resistivity measurements, we elucidate the relations of these phases in Rb$_{1-δ}$Fe$_y$Se$_{2-z}$S$_z$. We find: i) the iron content is crucial in stabilizing the stripe antiferromagnetic (AF) phase with rhombic iron vacancy order ($y\approx1.5$), the block AF phase with $\sqrt{5}\times \sqrt{5}$ iron vacancy order ($y\approx1.6$), and the iron vacancy-free phase ($y\approx2$); ii) the superconducting phase ($z=0$) evolves into a metallic phase ($z>1.5$) with sulfur substitution due to the progressive decrease of the electronic correlation strength. Both the stripe AF phase and the block AF phase are Mott insulators. Our data suggest that there are miscibility gaps between these three phases. The existence of the miscibility gaps in the iron content is the key to understanding the relationship between these complicated phases.

preprint2014arXiv

The role of stoichiometric vacancy periodicity in pressure-induced amorphization of the Ga2SeTe2 semiconductor alloy

We observe that pressure-induced amorphization of Ga2SeTe2 (a III-VI semiconductor) is directly influenced by the periodicity of its intrinsic defect structures. Specimens with periodic and semi-periodic two-dimensional vacancy structures become amorphous around 10-11 GPa in contrast to those with aperiodic structures, which amorphize around 7-8 GPa. The result is a notable instance of altering material phase-change properties via rearrangement of stoichiometric vacancies as opposed to adjusting their concentrations. Based on our experimental findings, we posit that periodic two-dimensional vacancy structures in Ga2SeTe2 provide an energetically preferred crystal lattice that is less prone to collapse under applied pressure. This is corroborated through first-principles electronic structure calculations, which demonstrate that the energy stability of III-VI structures under hydrostatic pressure is highly dependent on the configuration of intrinsic vacancies.

preprint2013arXiv

Probing the local environment of two-dimensional ordered vacancy structures in Ga2SeTe2 via aberration-corrected electron microscopy

There has been considerable interest in chalcogenide alloys with high concentrations of native vacancies that lead to properties desirable for thermoelectric and phase-change materials. Recently, vacancy ordering has been identified as the mechanism for metal-insulator transitions observed in GeSb2Te4 and an unexpectedly low thermal conductivity in Ga2Te3. Here, we report the direct observation of vacancy ordering in Ga2SeTe2 utilizing aberration-corrected electron microscopy. Images reveal a cation-anion dumbbell inversion associated with the accommodation of vacancy ordering across the entire crystal. The result is a striking example of the interplay between native defects and local structure.