Researcher profile

E. Suárez Morell

E. Suárez Morell contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
7works
0followers
2topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

7 published item(s)

preprint2026arXiv

Engineering Altermagnetism via Layer Shifts and Spin Order in Bilayer MnPS$_3$

Altermagnetic materials combine compensated magnetic order with momentum-dependent spin splitting, offering a fundamentally new route for spintronic functionality beyond conventional ferromagnets and antiferromagnets. While most studies have focused on three-dimensional compounds, the emergence of altermagnetism in few-layer two-dimensional materials remains largely unexplored. Here, we demonstrate that bilayer MnPS$_3$, a prototypical 2D van der Waals magnet, can host stacking-induced altermagnetic phases. Using density-functional theory and spin-Laue symmetry analysis, we show that interlayer spin alignment and lateral displacement act as coupled symmetry control parameters that switch the system between Type II (collinear AFM) and Type III (altermagnetic) phases. Our systematic exploration reveals how specific stacking geometries enable momentum-dependent spin polarization without net magnetization, even in the absence of spin-orbit coupling. These results establish stacking engineering as a powerful, purely structural route for designing tunable altermagnetic states in 2D magnets, opening pathways toward symmetry-driven spintronic and magnetoelectronic devices.

preprint2020arXiv

Strain-induced phase transition in CrI$_{3}$ bilayers

A monolayer of CrI$_3$ is a two-dimensional crystal that in its equilibrium configuration is a ferromagnetic semiconductor, however, two coupled layers can be ferromagnetic or antiferromagnetic depending on the stacking. We study the magnetic phase diagram upon the strain of the antiferromagnetically coupled bilayer with C2/m symmetry. We found that strain may be an efficient tool to tune the magnetic phase of the structure. A tensile strain stabilizes the antiferromagnetic phase, while a compressive strain turns the system ferromagnetic. We understood that behavior by looking at the relative displacement between layers due to the strain. We also study the evolution of the magnetic anisotropy, the magnetic exchange coupling between Cr atoms, and how the Curie temperature is affected by the strain.

preprint2013arXiv

Electronic Properties of Twisted Trilayer Graphene

We study the electronic properties of a twisted trilayer graphene, where two of the layers have Bernal stacking and the third one has a relative rotation with respect to the AB-stacked layers. Near the Dirac point, the AB-twisted trilayer graphene spectrum shows two parabolic Bernal-like bands and a twisted-like Dirac cone. For small twist angles, the parabolic bands present a gap that increases for decreasing rotation angle. There is also a shift in the twisted-like Dirac cone with a similar angle dependence. We correlate the gap in the trilayer with the shift of the Dirac cone in an isolated twisted bilayer, which is due to the loss of electron-hole symmetry caused by sublattice mixing in the rotated geometry. Using a tight-binding and a continuum model, we derive an effective Hamiltonian which accounts for the relevant low-energy properties of this system.

preprint2013arXiv

Radiation effects on the electronic structure of bilayer graphene

We report on the effects of laser illumination on the electronic properties of bilayer graphene. By using Floquet theory combined with Green's functions we unveil the appeareance of laser-induced gaps not only at integer multiples of $\hbar Ω/2$ but also at the Dirac point with features which are shown to depend strongly on the laser polarization. Trigonal warping corrections are shown to lead to important corrections for radiation in the THz range, reducing the size of the dynamical gaps. Furthermore, our analysis of the topological properties at low energies reveals that when irradiated with linearly polarized light, ideal bilayer graphene behaves as a trivial insulator, whereas circular polarization leads to a non-trivial insulator per valley.

preprint2011arXiv

Charge redistribution and interlayer coupling in twisted bilayer graphene under electric fields

We investigate the electronic density redistribution of rotated bilayer graphene under a perpendicular electric field, showing that the layers are actually coupled even for large angles. This layer-layer coupling is evidenced by the charge transfer on these structures as a function of the external voltage. We find an inhomogeneous excess charge distribution that is related to the moiré patterns for small angles, but that persists for larger angles where the carriers' velocity is equal to that of single layer graphene. Our results show that rotated bilayer systems are coupled for all rotation angles.

preprint2011arXiv

Trigonal distortion of topologically confined channels in bilayer Graphene

In this work we show that the trigonal warping of the electronic bands in bilayer graphene dramatically modifies the behavior of the one-dimensional modes topologically confined due to an inhomogeneous bias that changes sign across a channel. The topologically protected states are present but their behavior is disrupted from the predicted in the isotropic approximation. We present detailed studies of the electronic properties of the 1D channel in function of the orientation of the channel.

preprint2010arXiv

Flat Bands in Slightly Twisted Bilayer Graphene

The bands of graphite are extremely sensitive to topological defects which modify the electronic structure. In this paper we found non-dispersive flat bands no farther than 10 meV of the Fermi energy in slightly twisted bilayer graphene as a signature of a transition from a parabolic dispersion of bilayer graphene to the characteristic linear dispersion of graphene. This transition occurs for relative rotation angles of layers around $1.5^o$ and is related to a process of layer decoupling. We have performed ab-initio calculations to develop a tight binding model with an interaction Hamiltonian between layers that includes the $π$ orbitals of all atoms and takes into account interactions up to third nearest-neighbors within a layer.