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Researcher profile

J. W. González

J. W. González contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

9 published item(s)

preprint2026arXiv

Engineering Altermagnetism via Layer Shifts and Spin Order in Bilayer MnPS$_3$

Altermagnetic materials combine compensated magnetic order with momentum-dependent spin splitting, offering a fundamentally new route for spintronic functionality beyond conventional ferromagnets and antiferromagnets. While most studies have focused on three-dimensional compounds, the emergence of altermagnetism in few-layer two-dimensional materials remains largely unexplored. Here, we demonstrate that bilayer MnPS$_3$, a prototypical 2D van der Waals magnet, can host stacking-induced altermagnetic phases. Using density-functional theory and spin-Laue symmetry analysis, we show that interlayer spin alignment and lateral displacement act as coupled symmetry control parameters that switch the system between Type II (collinear AFM) and Type III (altermagnetic) phases. Our systematic exploration reveals how specific stacking geometries enable momentum-dependent spin polarization without net magnetization, even in the absence of spin-orbit coupling. These results establish stacking engineering as a powerful, purely structural route for designing tunable altermagnetic states in 2D magnets, opening pathways toward symmetry-driven spintronic and magnetoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Complete reversal of the atomic unquenched orbital moment by a single electron

The orbital angular moment of magnetic atoms adsorbed on surfaces is often quenched as a result of an anisotropic crystal field. Due to spin-orbit coupling, what remains of the orbital moment typically delineates the orientation of the electron spin. These two effects limit the scope of information processing based on these atoms to essentially only one magnetic degree of freedom: the spin. In this work, we gain independent access to both the spin and orbital degrees of freedom of a single atom, inciting and probing excitations of each moment. By coordinating a single Fe atom atop the nitrogen site of the Cu$_2$N lattice, we realize a single-atom system with a large zero-field splitting--the largest reported for Fe atoms on surfaces--and an unquenched uniaxial orbital moment that closely approaches the free-atom value. We demonstrate a full reversal of the orbital moment through a single-electron tunneling event between the tip and Fe atom, a process that is mediated by a charged virtual state and leaves the spin unchanged. These results, which we corroborate using density functional theory and first-principles multiplet calculations, demonstrate independent control over the spin and orbital degrees of freedom in a single-atom system.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strain-induced phase transition in CrI$_{3}$ bilayers

A monolayer of CrI$_3$ is a two-dimensional crystal that in its equilibrium configuration is a ferromagnetic semiconductor, however, two coupled layers can be ferromagnetic or antiferromagnetic depending on the stacking. We study the magnetic phase diagram upon the strain of the antiferromagnetically coupled bilayer with C2/m symmetry. We found that strain may be an efficient tool to tune the magnetic phase of the structure. A tensile strain stabilizes the antiferromagnetic phase, while a compressive strain turns the system ferromagnetic. We understood that behavior by looking at the relative displacement between layers due to the strain. We also study the evolution of the magnetic anisotropy, the magnetic exchange coupling between Cr atoms, and how the Curie temperature is affected by the strain.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electron Confinement Induced by Diluted Hydrogen-like Ad-atoms in Graphene Ribbons

We report the electronic properties of two-dimensional systems made of graphene nanoribbons which are patterned with ad-atoms in two separated regions. Due to the extra electronic confinement induced by the presence of the impurities, we find resonant levels, quasi-bound and impurity-induced localized states, which determine the transport properties of the system. Regardless of the ad-atom distribution in the system, we apply band-folding procedures to simple models and predict the energies and the spatial distribution of those impurity-induced states. We take into account two different scenarios: gapped graphene and the presence of randomly distributed ad-atoms in a low dilution regime. In both cases the defect-induced resonances are still detected. Our findings would encourage experimentalist to synthesize these systems and characterize their quasi-localized states employing, for instance, scanning tunneling spectroscopy (STS). Additionally, the resonant transport features could be used in electronic applications and molecular sensor devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Graphene single electron transistor as a spin sensor for magnetic adsorbates

We study single electron transport through a graphene quantum dot with magnetic adsorbates. We focus on the relation between the spin order of the adsorbates and the linear conductance of the device. The electronic structure of the graphene dot with magnetic adsorbates is modeled through numerical diagonalization of a tight-binding model with an exchange potential. We consider several mechanisms by which the adsorbate magnetic state can influence transport in a single electron transistor: by tuning the addition energy, by changing the tunneling rate and, in the case of spin polarized electrodes, through magnetoresistive effects. Whereas the first mechanism is always present, the others require that the electrode has either an energy or spin dependent density of states. We find that graphene dots are optimal systems to detect the spin state of a few magnetic centers.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Large spin splitting in the conduction band of transition metal dichalcogenide monolayers

We study the conduction band spin splitting that arises in transition metal dichalcogenide (TMD) semiconductor monolayers such as MoS$_2$, MoSe$_2$, WS$_2$ and WSe$_2$ due to the combination of spin-orbit coupling and lack of inversion symmetry. Two types of calculation are done. First, density functional theory (DFT) calculations based on plane waves and pseudo potentials that yield large splittings, between 3 and 30 meV. Second, we derive a tight-binding model, that permits to address the atomic origin of the splitting. The basis set of the model is provided by the maximally localized Wannier orbitals, obtained from the DFT calculation, and formed by 11 atomic-like orbitals corresponding to 5$d$ and 3$p$ orbitals of the transition metal (W,Mo) and chalcogenide (S,Se) atoms respectively. In the resulting Hamiltonian we can independently change the atomic spin-orbit coupling constant of the two atomic species at the unit cell, which permits to analyse their contribution to the spin splitting at the high symmetry points. We find that ---in contrast to the valence band--- both atoms give comparable contributions to the conduction band splittings. Given that these materials are most often $n-$doped, our findings are important for developments in TMD spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Quantum Hall effect in gapped graphene heterojunctions

We model the quantum Hall effect in heterostructures made of two gapped graphene stripes with different gaps, $Δ_1$ and $Δ_2$. We consider two main situations, $Δ_1=0,Δ_2\neq0$ and $Δ_1=-Δ_2$. They are different in a fundamental aspect: only the latter feature kink states that, when intervalley coupling is absent, are protected against backscattering. We compute the two terminal conductance of heterostructures with channel length up to 430 nm, in two transport configurations, parallel and perpendicular to the interface. By studying the effect of disorder on the transport along the boundary, we quantify the robustness of kink states with respect to backscattering. Transport perpendicular to the boundary shows how interface states open a backscattering channel for the conducting edge states, spoiling the perfect conductance quantization featured by the homogeneously gapped graphene Hall bars. Our results can be relevant for the study of graphene deposited on hexagonal Boron-Nitride as well as to model graphene with an interaction-driven gapped phase with two equivalent phases separated by a domain wall.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

In-gap impurity states as the hallmark of the Quantum Spin Hall phase

We study the different response to an impurity of the two topologically different phases shown by a two dimensional insulator with time reversal symmetry, namely, the Quantum Spin Hall and the normal phase. We consider the case of graphene as a toy model that features the two phases driven, respectively, by intrinsic spin-orbit coupling and inversion symmetry breaking. We find that strictly normalizable in-gap impurity states only occur in the Quantum Spin Hall phase and carry dissipationless current whose quirality is determined by the spin and pseudospin of the residing electron. Our results imply that topological order can be unveiled by local probes of defect states.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Gate-controlled conductance through bilayer graphene ribbons

We study the conductance of a biased bilayer graphene flake with monolayer nanoribbon contacts. We find that the transmission through the bilayer ribbon strongly depends on the applied bias between the two layers and on the relative position of the monolayer contacts. Besides the opening of an energy gap on the bilayer, the bias allows to tune the electronic density on the bilayer flake, making possible the control of the electronic transmission by an external parameter.

0 citations0 reviewsNo code linkedOpen access