Researcher profile

E. Sarnelli

E. Sarnelli contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

Proton induced Dark Count Rate degradation in 150-nm CMOS Single-Photon Avalanche Diodes

Proton irradiation effects on a Single-Photon Avalanche Diodes (SPADs) device manufactured using a 150-nm CMOS process are presented. An irradiation campaign has been carried out with protons of 20 MeV and 24 MeV on several samples of a test chip containing SPADs arrays with two different junction layouts. The dark count rate distributions have been analyzed as a function of the displacement damage dose. Annealing and cooling have been investigated as possible damage mitigation approaches. We also discuss, through a space radiation simulation, the suitability of such devices on several space mission case-studies.

preprint2013arXiv

πstates in all-pnictide Josephson junctions

We study the Josephson effect in $s_{\pm}/I/s_{\pm}$ junctions made by two bands reversed sign s-wave ($s_{\pm}$) superconductive materials. We derive an equation providing the bound Andreev energy states parameterized by the band ratio $α$, a parameter accounting for the weight of the second band with respect to the first one at the interface. For selected values of the band ratio and tunnel barrier amplitude, we predict various features of the Josephson current, among which a possible high temperature $π$ state of the junction (a doubly degenerate junction ground state) and a $π\rightarrow 0$ crossover with decreasing temperature.

preprint2009arXiv

Two-stage dissipation in a superconducting microbridge: Experiment and modeling

Using fluorescent microthermal imaging we have investigated the origin of "two-step" behavior in I-V curves for a current-carrying YBa_2Cu_3O_x superconducting bridge. High resolution temperature maps reveal that as the applied current increases the first step in the voltage corresponds to local dissipation (hot spot), whereas the second step is associated with onset of global dissipation throughout the entire bridge. A quantitative explanation of the experimental results is provided by a simple model for an inhomogeneous superconductor, assuming that the hot spot nucleates at a location with slightly depressed superconducting properties.