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E. Rotunno

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3 published item(s)

preprint2022arXiv

Ultrafast Transverse Modulation of Free Electrons by Interaction with Shaped Optical Fields

Spatio-temporal shaping of electron beams is a bold frontier in electron microscopy, enabling new routes toward spatial-resolution enhancement, selective probing, low-dose imaging and faster data acquisition. Over the last decade, shaping methods evolved from passive phase plates to low-speed electrostatic and magnetostatic displays. Recently, higher shaping speed and flexibility have become feasible by the advent of ultrafast electron microscopy, embodying a swift change of paradigm that relies on using light to control free electrons. Here, we experimentally demonstrate that arbitrary transverse modulation of electron beams is possible without the need for designing and fabricating complicated electron-optics elements or material nanostructures, but rather resorting to shaping light beams reflected from a planar thin film. We demonstrate arbitrary transverse modulation of electron wavepackets via inelastic interaction with a shaped ultrafast light field controlled by an external spatial light modulator (SLM). We illustrate this method by generating Hermite-Gaussian (HG) electron beams with HG10 and HG01 symmetry and discuss their possible use in enhancing the imaging contrast of microscopic features. Relative to current schemes, our approach adopting an external SLM dramatically widens the range of patterns that can be imprinted on the electron wave function and makes electron shaping a much easier task to perform.

preprint2020arXiv

Insights into image contrast from dislocations in ADF-STEM

Competitive mechanisms contribute to image contrast from dislocations in annular dark field scanning transmission electron microscopy ADF STEM. A clear theoretical understanding of the mechanisms underlying the ADF STEM contrast is therefore essential for correct interpretation of dislocation images. This paper reports on a systematic study of the ADF STEM contrast from dislocations in a GaN specimen, both experimentally and computationally. Systematic experimental ADF STEM images of the edge character dislocations revealed a number of characteristic contrast features that are shown to depend on both the angular detection range and specific position of the dislocation in the sample. A theoretical model based on electron channelling and Bloch wave scattering theories, supported by multislice simulations using Grillo s strain channelling equation, is proposed to elucidate the physical origin of such complex contrast phenomena.