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E. R. Ylvisaker

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Published work

5 published item(s)

preprint2013arXiv

Doping-Induced Spectral Shifts in Two Dimensional Metal Oxides

Doping of strongly layered ionic oxides is an established paradigm for creating novel electronic behavior. This is nowhere more apparent than in superconductivity, where doping gives rise to high temperature superconductivity in cuprates (hole-doped) and to surprisingly high Tc in HfNCl (Tc=25.5K, electron-doped). First principles calculations of hole-doping of the layered delafossite CuAlO2 reveal unexpectedly large doping-induced shifts in spectral density, strongly in opposition to the rigid band picture that is widely used as an accepted guideline. These spectral shifts, of similar origin as the charge transfer used to produce negative electron affinity surfaces and adjust Schottky barrier heights, drastically alter the character of the Fermi level carriers, leading in this material to an O-Cu-O molecule-based carrier (or polaron, at low doping) rather than a nearly pure-Cu hole as in a rigid band picture. First principles linear response electron-phonon coupling (EPC) calculations reveal, as a consequence, net weak EPC and no superconductivity rather than the high Tc obtained previously using rigid band expectations. These specifically two-dimensional dipole-layer driven spectral shifts provides new insights into materials design in layered materials foe functionalities besides superconductivity.

preprint2013arXiv

Effect of Local Electron-Electron Correlation in Hydrogen-like Impurities in Ge

We have studied the electronic and local magnetic structure of the hydrogen interstitial impurity at the tetrahedral site in diamond-structure Ge, using an empirical tight binding + dynamical mean field theory approach because within the local density approximation (LDA) Ge has no gap. We first establish that within LDA the 1s spectral density bifurcates due to entanglement with the four neighboring sp3 antibonding orbitals, providing an unanticipated richness of behavior in determining under what conditions a local moment hyperdeep donor or Anderson impurity will result, or on the other hand a gap state might appear. Using a supercell approach, we show that the spectrum, the occupation, and the local moment of the impurity state displays a strong dependence on the strength of the local on-site Coulomb interaction U, the H-Ge hopping amplitude, the depth of the bare 1s energy level epsilon_H, and we address to some extent the impurity concentration dependence. In the isolated impurity, strong interaction regime a local moment emerges over most of the parameter ranges indicating magnetic activity, and spectral density structure very near (or in) the gap suggests possible electrical activity in this regime.

preprint2010arXiv

NaAlSi: a self-doped semimetallic superconductor with free electrons and covalent holes

The layered ternary sp conductor NaAlSi, possessing the iron-pnictide "111" crystal structure, superconducts at 7 K. Using density functional methods, we show that this compound is an intrinsic (self-doped) low-carrier-density semimetal with a number of unusual features. Covalent Al-Si valence bands provide the holes, and free-electron-like Al 3s bands, which propagate in the channel between the neighboring Si layers, dip just below the Fermi level to create the electron carriers. The Fermi level (and therefore the superconducting carriers) lies in a narrow and sharp peak within a pseudogap in the density of states. The small peak arises from valence bands which are nearly of pure Si, quasi-two-dimensional, flat, and coupled to Al conduction bands. Isostructural NaAlGe, which is not superconducting above 1.6 K, has almost exactly the same band structure except for one missing piece of small Fermi surface. Certain deformation potentials induced by Si and Na displacements along the c-axis are calculated and discussed. It seems likely that the mechanism of pairing is related to that of several other lightly doped two-dimensional nonmagnetic semiconductors (TiNCl, ZrNCl, HfNCl), which is not well understood but apparently not of phonon origin.

preprint2009arXiv

Charge Fluctuations and the Valence Transition in Yb under Pressure

We present a dynamical mean field theory study of the valence transition ($f^{14} \to f^{13}$) in elemental, metallic Yb under pressure. Our calculations reproduce the observed valence transition as reflected in the volume dependence of the $4f$ occupation. The transition is accelerated by heating, and suggests quasiparticle or Kondo-like structure in the spectra of the trivalent end state, consistent with the early lanthanides. Results for the local charge fluctuations and susceptibility, however, show novel signatures uniquely associated with the valence transition itself, indicating that Yb is a fluctuating valence material in contrast to the intermediate valence behavior seen in the early trivalent lanthanides Ce, Pr, and Nd.

preprint2009arXiv

Orbital order, stacking defects and spin-fluctuations in the $p$-electron molecular solid RbO$_2$

We examine magnon and orbiton behavior in localized O$_2$ anti-bonding molecular $π^*$ orbitals using an effective Kugel-Khomskii Hamiltonian derived from a two band Hubbard model with hopping parameters taken from {\em ab initio} density functional calculations. The considerable difference between intraband and interband hoppings leads to a strong coupling between the spin wave dispersion and the orbital ground state, providing a straightforward way of experimentally determining the orbital ground state from the measured magnon dispersion. The near degeneracy of different orbital ordered states leads to stacking defects which further modulate spin-fluctuation spectra. Proliferation of orbital domains disrupts long-range magnetic order, thus causing a significant reduction in the observed Néel temperature.