Researcher profile

E. R. Mucciolo

E. R. Mucciolo contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2013arXiv

Fidelity of the surface code in the presence of a bosonic bath

We study the resilience of the surface code to decoherence caused by the presence of a bosonic bath. This approach allows us to go beyond the standard stochastic error model commonly used to quantify decoherence and error threshold probabilities in this system. The full quantum mechanical system-bath dynamics is computed exactly over one quantum error correction cycle. Since all physical qubits interact with the bath, space-time correlations between errors are taken into account. We compute the fidelity of the surface code as a function of the quantum error correction time. The calculation allows us to map the problem onto an Ising-like statistical spin model with two-body interactions and a fictitious temperature which is related to the inverse bath coupling constant. The model departs from the usual Ising model in the sense that interactions can be long ranged and can involve complex exchange couplings; in addition, the number of allowed configurations is restricted by the syndrome extraction. Using analytical estimates and numerical calculations, we argue that, in the limit of an infinite number of physical qubits, the spin model sustain a phase transition which can be associated to the existence of an error threshold in the surface code. An estimate of the transition point is given for the case of nearest-neighbor interactions.

preprint2012arXiv

Dynamic Spin Injection into Chemical Vapor Deposited Graphene

We demonstrate dynamic spin injection into chemical vapor deposition (CVD) grown graphene by spin pumping from permalloy (Py) layers. Ferromagnetic resonance measurements at room temperature reveal a strong enhancement of the Gilbert damping at the Py/graphene interface, exceeding that observed in even Py/platinum interfaces. Similar results are also shown on Co/graphene layers. This enhancement in the Gilbert damping is understood as the consequence of spin pumping at the interface driven by magnetization dynamics. Our observations suggest a strong enhancement of spin-orbit coupling in CVD graphene, in agreement with earlier spin valve measurements.

preprint2012arXiv

RKKY Interactions in Graphene: Dependence on Disorder and Gate Voltage

We report the dependence of Ruderman-Kittel-Kasuya-Yoshida\,(RKKY) interaction on nonmagmetic disorder and gate voltage in grapheme. First the semiclassical method is employed to reserve the expression for RKKY interaction in clean graphene. Due to the pseudogap at Dirac point, the RKKY coupling in undoped grapheme is found to be proportional to $1/R^3$. Next, we investigate how the RKKY interaction depends on nonmagnetic disorder strength and gate voltage by studying numerically the Anderson tight-binding model on a honeycomb lattice. We observe that the RKKY interaction along the armchair direction is more robust to nonmagnetic disorder than in other directions. This effect can be explained semiclassically: The presence of multiple shortest paths between two lattice sites in the armchair directions is found to be responsible for the reduceddisorder sensitivity. We also present the distribution of the RKKY interaction for the zigzag and armchair directions. We identify three different shapes of the distributions which are repeated periodically along the zigzag direction, while only one kind, and more narrow distribution, is observed along the armchair direction. Moreover, we find that the distribution of amplitudes of the RKKY interaction crosses over from a non-Gaussian shape with very long tails to a completely log-normal distribution when increasing the nonmagnetic disorder strength. The width of the log-normal distribution is found to linearly increase with the strength of disorder, in agreement with analytical predictions. At finite gate voltage near the Dirac point, Friedel oscillation appears in addition to the oscillation from the interference between two Dirac points. This results in a beating pattern. We study how these beating patterns are effected by the nonmagnetic disorder in doped graphene.

preprint2011arXiv

Correlated random hopping disorder in graphene at high magnetic fields: Landau level broadening and localization properties

We study the density of states and localization properties of the lowest Landau levels of graphene at high magnetic fields. We focus on the effects caused by correlated long-range hopping disorder, which, in exfoliated graphene, is induced by static ripples. We find that the broadening of the lowest Landau level shrinks exponentially with increasing disorder correlation length. At the same time, the broadening grows linearly with magnetic field and with disorder amplitudes. The lowest Landau level peak shows a robust splitting, whose origin we identify as the breaking of the sublattice (valley) degeneracy.

preprint2011arXiv

RKKY Interaction in Disordered Graphene

We investigate the effects of nonmagnetic disorder on the Ruderman-Kittel-Kasuya-Yoshida (RKKY) interaction in graphene by studying numerically the Anderson model with on-site and hopping disorder on a honeycomb lattice at half filling. We evaluate the strength of the interaction as a function of the distance R between two magnetic ions, as well as their lattice positions and orientations. In the clean limit, we find that the strength of the interaction decays as 1/R^3, with its sign and oscillation amplitude showing strong anisotropy. With increasing on-site disorder, the mean amplitude decreases exponentially at distances exceeding the elastic mean free path. At smaller distances, however, the oscillation amplitude increases strongly and its sign changes on the same sublattice for all directions but the armchair direction. For random hopping disorder, no sign change is observed. No significant changes to the geometrical average values of the RKKY interaction are found at small distances, while exponential suppression is observed at distances exceeding the localization length.