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Source author record

E. R. MacQuarrie

E. R. MacQuarrie appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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quant-phcond-mat.mes-hallcond-mat.mtrl-sciphysics.app-phphysics.optics

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Published work

8 published item(s)

preprint2021arXiv

T centres in photonic silicon-on-insulator material

Global quantum networks will benefit from the reliable creation and control of high-performance solid-state telecom photon-spin interfaces. T radiation damage centres in silicon provide a promising photon-spin interface due to their narrow O-band optical transition near 1326 nm and long-lived electron and nuclear spin lifetimes. To date, these defect centres have only been studied as ensembles in bulk silicon. Here, we demonstrate the reliable creation of high concentration T centre ensembles in the 220 nm device layer of silicon-on-insulator (SOI) wafers by ion implantation and subsequent annealing. We then develop a method that uses spin-dependent optical transitions to benchmark the characteristic optical spectral diffusion within these T centre ensembles. Using this new technique, we show that with minimal optimization to the fabrication process high densities of implanted T centres localized $\lesssim$100 nm from an interface display ~1 GHz characteristic levels of total spectral diffusion.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Auto-tuning of double dot devices in situ with machine learning

The current practice of manually tuning quantum dots (QDs) for qubit operation is a relatively time-consuming procedure that is inherently impractical for scaling up and applications. In this work, we report on the {\it in situ} implementation of a recently proposed autotuning protocol that combines machine learning (ML) with an optimization routine to navigate the parameter space. In particular, we show that a ML algorithm trained using exclusively simulated data to quantitatively classify the state of a double-QD device can be used to replace human heuristics in the tuning of gate voltages in real devices. We demonstrate active feedback of a functional double-dot device operated at millikelvin temperatures and discuss success rates as a function of the initial conditions and the device performance. Modifications to the training network, fitness function, and optimizer are discussed as a path toward further improvement in the success rate when starting both near and far detuned from the target double-dot range.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Progress Towards a Capacitively Mediated CNOT Between Two Charge Qubits in Si/SiGe

Fast operations, an easily tunable Hamiltonian, and a straightforward two-qubit interaction make charge qubits a useful tool for benchmarking device performance and exploring two-qubit dynamics. Here, we tune a linear chain of four Si/SiGe quantum dots to host two double dot charge qubits. Using the capacitance between the double dots to mediate a strong two-qubit interaction, we simultaneously drive coherent transitions to generate correlations between the qubits. We then sequentially pulse the qubits to drive one qubit conditionally on the state of the other. We find that a conditional $π$-rotation can be driven in just 74 ps with a modest fidelity demonstrating the possibility of two-qubit operations with a 13.5 GHz clockspeed.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

The effect of external electric fields on silicon with superconducting gallium nano-precipitates

Motivated by potential transformative applications of nanoelectronic circuits that incorporate superconducting elements, and by the advantages of integrating these elements in a silicon materials platform, we investigate the properties of the superconductivity of silicon ion-implanted with gallium. Here we measure 40 different samples and explore both a variety of preparation methods (yielding both superconducting and non-superconducting samples), and the reproducibility of one of the preparation methods yielding superconducting samples. While we find agreement with the existing literature that superconducting effects are visible in this system, we also find that this superconductivity is not influenced by voltages applied to a top gate. The superconductivity in this materials system is not gateable for applied electric fields as large as 8 MV/cm. We also present results of scanning transmission electron microscopy imaging of some of the same samples for which we report electronic characterization. In agreement with the existing literature, we find that the presence of Ga precipitates is essential to the presence of a superconducting transition in these samples. However, we also find evidence for large inhomogeneities in this system, which we discuss in connection with the lack of gateability we report here.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Measurements of capacitive coupling within a quadruple quantum dot array

We present measurements of the capacitive coupling energy and the inter-dot capacitances in a linear quadruple quantum dot array in undoped Si/SiGe. With the device tuned to a regime of strong ($>$1 GHz) intra-double dot tunnel coupling, as is typical for double dot qubits, we measure a capacitive coupling energy of $20.9 \pm 0.3$ GHz. In this regime, we demonstrate a fitting procedure to extract all the parameters in the 4D Hamiltonian for two capacitively coupled charge qubits from a 2D slice through the quadruple dot charge stability diagram. We also investigate the tunability of the capacitive coupling energy, using inter-dot barrier gate voltages to tune the inter- and intra-double dot capacitances, and change the capacitive coupling energy of the double dots over a range of 15-32 GHz. We provide a model for the capacitive coupling energy based on the electrostatics of a network of charge nodes joined by capacitors, which shows how the coupling energy should depend on inter-double dot and intra-double dot capacitances in the network, and find that the expected trends agree well with the measurements of coupling energy.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

A single-molecule approach to ZnO defect studies: single photons and single defects

Investigations that probe defects one at a time offer a unique opportunity to observe properties and dynamics that are washed out of ensemble measurements. Here we present confocal fluorescence measurements of individual defects in Al-doped ZnO nanoparticles and undoped ZnO sputtered films that are excited with sub-bandgap energy light. Photon correlation measurements yield both antibunching and bunching, indicative of single-photon emission from isolated defects that possess a metastable shelving state. The single-photon emission is in the range 560 - 720 nm and typically exhibits two broad spectral peaks separated by approximately 150 meV. The excited state lifetimes range from 1 - 13 ns, consistent with the finite-size and surface effects of nanoparticles and small grains. We also observe discrete jumps in the fluorescence intensity between a bright state and a dark state. The dwell times in each state are exponentially distributed and the average dwell time in the bright (dark) state does (may) depend on the power of the exciting laser. Taken together, our measurements demonstrate the utility of a single-molecule approach to semiconductor defect studies and highlight ZnO as a potential host material for single-defect based applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Coherent Control of a Nitrogen-Vacancy Center Spin Ensemble with a Diamond Mechanical Resonator

Coherent control of the nitrogen-vacancy (NV) center in diamond's triplet spin state has traditionally been accomplished with resonant ac magnetic fields under the constraint of the magnetic dipole selection rule, which forbids direct control of the $|-1>\leftrightarrow |+1>$ spin transition. We show that high-frequency stress resonant with the spin state splitting can coherently control NV center spins within this subspace. Using a bulk-mode mechanical microresonator fabricated from single-crystal diamond, we apply intense ac stress to the diamond substrate and observe mechanically driven Rabi oscillations between the $|-1>$ and $|+1>$ states of an NV center spin ensemble. Additionally, we measure the inhomogeneous spin dephasing time ($T_{2}^{*}$) of the spin ensemble using a mechanical Ramsey sequence and compare it to the dephasing times measured with a magnetic Ramsey sequence for each of the three spin qubit combinations available within the NV center ground state. These results demonstrate coherent spin driving with a mechanical resonator and could enable the creation of a phase-sensitive $Δ$-system within the NV center ground state.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Mechanical spin control of nitrogen-vacancy centers in diamond

As spin-based quantum technology evolves, the ability to manipulate spin with non-magnetic fields is critical - both for the development of hybrid quantum systems and for compatibility with conventional technology. Particularly useful examples are electric fields, optical fields, and mechanical lattice vibrations. The last of these represents direct spin-phonon coupling, which has garnered fundamental interest as a potential mediator of spin-spin interactions, but could also find applications in high-stability inertial sensing. In this Letter, we demonstrate direct coupling between phonons and nitrogen-vacancy (NV) center spins in diamond by inducing spin transitions with mechanically-driven harmonic strain. The ability to control NV spins mechanically can enhance NV-based quantum metrology, grant access to all transitions within the spin-1 quantum state of the NV center, and provide a platform to study spin-phonon interactions at the level of a few interacting spins.

0 citations0 reviewsNo code linkedOpen access