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Researcher profile

J. P. Dodson

J. P. Dodson contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallquant-ph

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Published work

5 published item(s)

preprint2022arXiv

How valley-orbit states in silicon quantum dots probe quantum well interfaces

The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron interactions. Here, we report measurements of one- and two-electron valley-orbit state energies as the dot potential is modified by changing gate voltages, and we calculate these same energies using full configuration interaction calculations. The results enable an understanding of the interplay between the physical contributions and enable a new probe of the quantum well interface.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Auto-tuning of double dot devices in situ with machine learning

The current practice of manually tuning quantum dots (QDs) for qubit operation is a relatively time-consuming procedure that is inherently impractical for scaling up and applications. In this work, we report on the {\it in situ} implementation of a recently proposed autotuning protocol that combines machine learning (ML) with an optimization routine to navigate the parameter space. In particular, we show that a ML algorithm trained using exclusively simulated data to quantitatively classify the state of a double-QD device can be used to replace human heuristics in the tuning of gate voltages in real devices. We demonstrate active feedback of a functional double-dot device operated at millikelvin temperatures and discuss success rates as a function of the initial conditions and the device performance. Modifications to the training network, fitness function, and optimizer are discussed as a path toward further improvement in the success rate when starting both near and far detuned from the target double-dot range.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Microwave Engineering for Semiconductor Quantum Dots in a cQED Architecture

We develop an engineered microwave environment for coupling high Q superconducting resonators to quantum dots using a multilayer fabrication stack for the dot control wiring. Analytic and numerical models are presented to understand how parasitic capacitive coupling to the dot bias leads can result in microwave energy leakage and low resonator quality factors. We show that by controlling the characteristic impedance of the dot bias wiring, on-chip quality factors of 8140 can be attained without the addition of explicit filtering. Using this approach we demonstrate single electron occupation in double and triple dots detected via dipole or quadrupole coupling to a superconducting resonator. Additionally, by using multilayer fabrication we are able to improve ground plane integrity and keep microwave crosstalk below -20 dB out to 18 GHz while maintaining high wire density which will be necessary for future circuit quantum electrodyanmics (cQED) quantum dot processors.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Progress Towards a Capacitively Mediated CNOT Between Two Charge Qubits in Si/SiGe

Fast operations, an easily tunable Hamiltonian, and a straightforward two-qubit interaction make charge qubits a useful tool for benchmarking device performance and exploring two-qubit dynamics. Here, we tune a linear chain of four Si/SiGe quantum dots to host two double dot charge qubits. Using the capacitance between the double dots to mediate a strong two-qubit interaction, we simultaneously drive coherent transitions to generate correlations between the qubits. We then sequentially pulse the qubits to drive one qubit conditionally on the state of the other. We find that a conditional $π$-rotation can be driven in just 74 ps with a modest fidelity demonstrating the possibility of two-qubit operations with a 13.5 GHz clockspeed.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Measurements of capacitive coupling within a quadruple quantum dot array

We present measurements of the capacitive coupling energy and the inter-dot capacitances in a linear quadruple quantum dot array in undoped Si/SiGe. With the device tuned to a regime of strong ($>$1 GHz) intra-double dot tunnel coupling, as is typical for double dot qubits, we measure a capacitive coupling energy of $20.9 \pm 0.3$ GHz. In this regime, we demonstrate a fitting procedure to extract all the parameters in the 4D Hamiltonian for two capacitively coupled charge qubits from a 2D slice through the quadruple dot charge stability diagram. We also investigate the tunability of the capacitive coupling energy, using inter-dot barrier gate voltages to tune the inter- and intra-double dot capacitances, and change the capacitive coupling energy of the double dots over a range of 15-32 GHz. We provide a model for the capacitive coupling energy based on the electrostatics of a network of charge nodes joined by capacitors, which shows how the coupling energy should depend on inter-double dot and intra-double dot capacitances in the network, and find that the expected trends agree well with the measurements of coupling energy.

0 citations0 reviewsNo code linkedOpen access