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E. Paris

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Published work

3 published item(s)

preprint2022arXiv

Resonant Inelastic X-ray Scattering Study of Electron-Exciton Coupling in High-Tc Cuprates

Explaining the mechanism of superconductivity in the high-$T_c$ cuprates requires an understanding of what causes electrons to form Cooper pairs. Pairing can be mediated by phonons, the screened Coulomb force, spin or charge fluctuations, excitons, or by a combination of these. An excitonic pairing mechanism has been postulated, but experimental evidence for coupling between conduction electrons and excitons in the cuprates is sporadic. Here we use resonant inelastic x-ray scattering (RIXS) to monitor the temperature dependence of the $\underline{d}d$ exciton spectrum of Bi$_2$Sr$_2$CaCu$_2$O$_{8-x}$ (Bi-2212) crystals with different charge carrier concentrations. We observe a significant change of the $\underline{d}d$ exciton spectra when the materials pass from the normal state into the superconductor state. Our observations show that the $\underline{d}d$ excitons start to shift up (down) in the overdoped (underdoped) sample when the material enters the superconducting phase. We attribute the superconductivity-induced effect and its sign-reversal from underdoped to overdoped to the exchange coupling of the site of the $\underline{d}d$ exciton to the surrounding copper spins.

preprint2016arXiv

Localized and mixed valence state of Ce $4f$ in superconducting and ferromagnetic CeO$_{1-x}$F$_{x}$BiS$_{2}$ revealed by x-ray absorption and photoemission spectroscopy

We have performed Ce $L_3$-edge x-ray absorption spectroscopy (XAS) and Ce $4d$-$4f$ resonant photoemission spectroscopy (PES) on single crystals of CeO$_{1-x}$F$_x$BiS$_2$ for $x=0.0$ and 0.5 in order to investigate the Ce $4f$ electronic states. In the Ce $L_3$-edge XAS, mixed valence of Ce was found in the $x=0.0$ sample and the F-doping suppresses it, which is consistent with the results on polycrystalline samples. As for the resonant PES, we found that the Ce $4f$ electrons in both $x=0.0$ and $0.5$ systems respectively form a flat band at 1.0 eV and 1.4 eV below the Fermi level and there is no contribution to the Fermi surfaces. Interestingly, Ce valence in CeOBiS$_2$ deviates from Ce$^{3+}$ even though Ce $4f$ electrons are localized, indicating the Ce valence is not in a typical valence fluctuation regime. We assume that localized Ce $4f$ in CeOBiS$_2$ is mixed with the unoccupied Bi $6p_z$, which is consistent with the previous local structural study. Based on the analysis of the Ce $L_3$-edge XAS spectra using Anderson's impurity model calculation, we found that the transfer integral becomes smaller increasing the number of Ce $4f$ electrons upon the F substitution for O.

preprint2016arXiv

Raman phonon spectrum of the Dzyaloshinskii-Moriya helimagnet Ba2CuGe2O7

The Raman spectrum of Ba2CuGe2O7, a tetragonal insulator which develops Dzyaloshinsky- Moriya helical magnetism below TN = 3.2 K, has been detected at temperatures varying from 300 to 80 K in a single crystal, with the radiation polarized either in the ab plane or along the c axis of its tetragonal cell. 29 phonon lines out of the 35 allowed by the Raman selection rules for the present geometry were observed, and their vibrational frequencies were found in overall good agreement with those provided by shell-model calculations. Together with the previous report on the infrared-active phonons [A. Nucara et al., Phys. Rev. B 90, 014304 (2014)] the present study provides an exhaustive description, both experimental and theoretical, of the lattice dynamics in Ba2CuGe2O7.