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Researcher profile

E. L. Silva

E. L. Silva contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

2 published item(s)

preprint2013arXiv

Electronic structure modification of Si-nanocrystals with F4 -TCNQ

We use first-principles models to demonstrate how an organic oxidizing agent, F4 -TCNQ (7,7,8,8- tetracyano-2,3,5,6-tetrafluoroquinodimethane), modifies the electronic structure of silicon nanocrys- tals, suggesting it may enhance p-type carrier density and mobility. The proximity of the lowest unoccupied level of F4 -TCNQ to the highest occupied level of the Si-nanocrystals promotes the formation of an empty hybrid state overlapping both nanocrystal and molecule, reducing the exci- tation energy to about 0.8-1 eV in vacuum. Hence, it is suggested that F4 -TCNQ can serve both as a surface oxidant and a mediator for hole hopping between adjacent nanocrystals.

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preprint2012arXiv

Hydrogen Impurity in Yttria: \textit{Ab-Initio} Study by Semi-Local and Hybrid Functionals

A study based on density functional theory calculations was performed for the three charge states of interstitial hydrogen in Yttria. The present calculations were carried out by employing the GGA-PBE and the HSE06 exchange-correlation functional. It is observed that the ground state H$^0$ and H$^-$ configurations are similar in behaviour; these prefer to relax in the O vacant site, with limited structural relaxation. For the neutral and the negative charged systems more two different geometrical configurations occur with higher energies, which evidence the existence of metastable sites of H in the Yttria lattice. The H$^+$ equilibrium state is found only when a strong bond between the impurity ion and an anion, O-H bond of $\sim$1 Å, is formed. The formation energy of the interstitial impurity is studied, for which amphoteric behaviour is found for this defect and for the ground state structures. These results evidence that hydrogen counteracts the prevailing conductivity of the host lattice, thus passivating any existing electrical levels originated from other doping sources. To compare results with non-equilibrium and short time-scale $μ$SR measurements, the formation energy of the higher energy configurations were also evaluated. For the Bond O geometrical site, H evidences a donor-dopant behaviour, hence enabling the coexistence of donor behaviour with the ground-state amphoteric behaviour. From the density of states results, and for the H$^0$ and H$^-$ charge states, a defect level was observed in the band gap. For the ground state Vacant O configuration and the metastable Interstitial structure the defect level was found to be slightly above the valence band maximum, hence indicating no dopant-donor character for the Yttria material. But, for the Bond O, local-minimum, configuration, the defect level is located above the middle of the band gap, closer the conduction band.

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