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M. Barroso

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cond-mat.mtrl-sci nucl-ex cond-mat.mes-hall hep-ex nucl-th

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preprint2022arXiv

Determination of the argon spectral function from (e,e'p) data

The E12-14-012 experiment, performed in Jefferson Lab Hall A, has measured the $(e, e'p)$ cross section in parallel kinematics using a natural argon target. Here, we report the full results of the analysis of the data set corresponding to beam energy 2.222 GeV, and spanning the missing momentum and missing energy range $15 \lesssim p_m \lesssim 300$ MeV/c and $12 \lesssim E_m \lesssim 80$ MeV. The reduced cross section, determined as a function of $p_m$ and $E_m$ with $\approx$4\% accuracy, has been fitted using the results of Monte Carlo simulations involving a model spectral function and including the effects of final state interactions. The overall agreement between data and simulations turns out to be quite satisfactory ($χ^2$/n.d.o.f.=1.9). The resulting spectral function will provide valuable new information, needed for the interpretation of neutrino interactions in liquid argon detectors.

preprint2021arXiv

Measurement of the Ar(e,e$^\prime$ p) and Ti(e,e$^\prime$ p) cross sections in Jefferson Lab Hall A

The E12-14-012 experiment, performed in Jefferson Lab Hall A, has collected exclusive electron-scattering data (e,e$^\prime$p) in parallel kinematics using natural argon and natural titanium targets. Here, we report the first results of the analysis of the data set corresponding to beam energy of 2,222 MeV, electron scattering angle 21.5 deg, and proton emission angle -50 deg. The differential cross sections, measured with $\sim$4% uncertainty, have been studied as a function of missing energy and missing momentum, and compared to the results of Monte Carlo simulations, obtained from a model based on the Distorted Wave Impulse Approximation.

preprint2013arXiv

Electronic structure modification of Si-nanocrystals with F4 -TCNQ

We use first-principles models to demonstrate how an organic oxidizing agent, F4 -TCNQ (7,7,8,8- tetracyano-2,3,5,6-tetrafluoroquinodimethane), modifies the electronic structure of silicon nanocrys- tals, suggesting it may enhance p-type carrier density and mobility. The proximity of the lowest unoccupied level of F4 -TCNQ to the highest occupied level of the Si-nanocrystals promotes the formation of an empty hybrid state overlapping both nanocrystal and molecule, reducing the exci- tation energy to about 0.8-1 eV in vacuum. Hence, it is suggested that F4 -TCNQ can serve both as a surface oxidant and a mediator for hole hopping between adjacent nanocrystals.

preprint2012arXiv

Doping of Si nanoparticles: the effect of oxidation

The preferred location of boron and phosphorus in oxidized free-standing Si nanoparticles was investigated using a first-principles density functional approach. The calculated formation energies indicate that P should segregate to the silicon core, whereas B is equally stable in the Si and SiO_2 regions. Our models thus suggest that, in contrast with nanocrystals with H-terminated surfaces, the efficiency of phosphorus incorporation in oxidized Si nanoparticles can be improved by thermal annealing.