BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

E. Kogan

E. Kogan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.stat-mechcond-mat.dis-nncond-mat.othercond-mat.str-elphysics.flu-dyn

Catalog footprint

What is connected

24works
7topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

24 published item(s)

preprint2016arXiv

Critical behaviour of anisotropic magnets with quenched disorder: replica symmetry breaking studied by operator product expansion

We study critical behaviour of disordered magnets near four dimensions. We consider the system with explicit cubic anisotropy and scalar disorder and that with random direction of anisotropy axis. The quenched disorder is taken into account by replica method. Using the method of operator product expansion, we derive in the first order to $ε$ approximation the renormalization group equations taking into account possible replica symmetry breaking.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Influence of ageing on Raman spectra and the conductivity of monolayer graphene samples irradiated by heavy and light ions

The influence of long-term ageing (about one year) on the Raman scattering (RS) spectra and the temperature dependence of conductivity has been studied in two series of monolayer graphene samples irradiated by different doses of C$^{+}$ and Xe$^{+}$ ions. It is shown that the main result of ageing consists of changes in the intensity and position of D- and G- and 2D-lines in RS spectra and in an increase of the conductivity. The observed effects are explained in terms of an increase of the radius of the \textquotedblleft activated\textquotedblright{} area around structural defects.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Hopping magnetoresistance in ion irradiated monolayer graphene

Magnetoresistance (MR) of ion irradiated monolayer graphene samples with variable-range hopping (VRH) mechanism of conductivity was measured at temperatures down to $T = 1.8$ K in magnetic fields up to $B = 8$ T. It was observed that in perpendicular magnetic fields, hopping resistivity $R$ decreases, which corresponds to negative MR (NMR), while parallel magnetic field results in positive MR (PMR) at low temperatures. NMR is explained on the basis of the "orbital" model in which perpendicular magnetic field suppresses the destructive interference of many paths through the intermediate sites in the total probability of the long-distance tunneling in the VRH regime. At low fields, a quadratic dependence ($|ΔR/R|\sim B^2$) of NMR is observed, while at $B > B^*$, the quadratic dependence is replaced by the linear one. It was found that all NMR curves for different samples and different temperatures could be merged into common dependence when plotted as a function of $B/B^*$. It is shown that $B^*\sim T^{1/2}$ in agreement with predictions of the "orbital" model. The obtained values of $B^*$ allowed also to estimate the localization radius $ξ$ of charge carriers for samples with different degree of disorder. PMR in parallel magnetic fields is explained by suppression of hopping transitions via double occupied states due to alignment of electron spins.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Localization of charge carriers in monolayer graphene gradually disordered by ion irradiation

Gradual localization of charge carriers was studied in a series of micro-size samples of monolayer graphene fabricated on the common large scale film and irradiated by different doses of C$^+$ ions with energy 35 keV. Measurements of the temperature dependence of conductivity and magnetoresistance in fields up to 4 T showed that at low disorder, the samples are in the regime of weak localization and antilocalization. Further increase of disorder leads to strong localization regime, when conductivity is described by the variable-range-hopping (VRH) mechanism. A crossover from the Mott regime to the Efros-Shklovskii regime of VRH is observed with decreasing temperature. Theoretical analysis of conductivity in both regimes showed a remarkably good agreement with experimental data.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Raman scattering and electrical resistance of highly disordered graphene

Raman scattering (RS) spectra and current-voltage characteristics at room temperature were measured in six series of small samples fabricated by means of electron-beam lithography on the surface of a large size (5x5 mm) industrial monolayer graphene film. Samples were irradiated by different doses of C${}^+$ ion beam up to $10^{15}$ cm${}^{-2}$. It was observed that at the utmost degree of disorder, the Raman spectra lines disappear which is accompanied by the exponential increase of resistance and change in the current-voltage characteristics.These effects are explained by suggestion that highly disordered graphene film ceases to be a continuous and splits into separate fragments. The relationship between structure (intensity of RS lines) and sample resistance is defined. It is shown that the maximal resistance of the continuous film is of order of reciprocal value of the minimal graphene conductivity $πh/4e^2\approx 20$ kOhm.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Energy bands in graphene: Comparison between the tight-binding model and {\it ab initio} calculations

We compare the classification of the electron bands in graphene, obtained by group theory algebra in the framework of tight-binding model (TBM), with that calculated in the density-functional theory (DFT) framework. Identification in the DFT band-structure of all eight energy bands (four valence and four conduction bands) corresponding to the TBM-derived energy bands is performed and corresponding analysis is presented. The four occupied (three $σ$- and one $π$-like) and three unoccupied (two $σ$- and one $π$-like) bands given by DFT closely correspond to those predicted by TBM, both by their symmetry and their dispersion law. However, the two lowest lying at the $Γ$-point unoccupied bands (one of them of a $σ$-like type and the other of a $π$-like one), are not of TBM type. According both to their symmetry and to the electron density these bands are plane waves orthogonal to the TBM valence bands; dispersion of these states can be determined unambiguously up to the Brillouin zone borders. On the other hand, the fourth unoccupied band given by the TBM, can be identified among those given by the DFT band calculations; it is situated rather high with respect to energy. The interaction of this band with the free-electron states is so strong, that it exists only in a part of $k$-space.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Comment on the "Create Dirac Cones in Your Favorite Materials", by Chia-Hui Lin and Wei Ku (arXiv:1303.4822)

Recently a paper by Lin and Ku \cite{lin} was posted, where the authors propose a very interesting idea to engineer the Dirac points in material which originally did not have such points by inducing a CDW state through introduction of impurities like vacancy, substitution, or intercalation. In this comment we would like to explain the appearance of the Dirac points in such engineered structures by symmetry arguments.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Next-nearest-neighbor Tight-binding Model of Plasmons in Graphene

In this paper we investigate the influence of the next-nearest-neighbor coupling of tight-binding model of graphene on the spectrum of plasmon excitations. The nearest-neighbor tight-binding model was previously used to calculate plasmon spectrum in the next paper [1]. We expand the previous results of the paper by the next-nearest-neighbor tight-binding model. Both methods are based on the numerical calculation of the dielectric function of graphene and loss function. Here we compare plasmon spectrum of the next-nearest and nearest-neighbor tight-binding models and find differences between plasmon dispersion of two models.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Space Group Symmetry Classification of Energy Bands in Graphene and Destruction of Dirac Points by Supercell Potential

In the previous publications (E. Kogan and V. U. Nazarov, Phys. Rev. B {\bf 85}, 115418 (2012) and E. Kogan, Graphene {\bf 2}, 74 (2013)) we presented point group symmetry classification of energy bands in graphene. In the present note we generalize classification by considering the space group symmetry. Also in the framework of group theory we describe destruction of the Dirac points in graphene by a supercell potential.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

All approaches to RKKY interaction in graphene are equal, but some approaches are more equal than others

We show explicitly that two approaches to calculations of RKKY interaction between two magnetic impurities in graphene based on Green's functions: one using coordinate--imaginary time representation, and the other using momentum--frequency representation, give exactly the same results and none of them has to operate with diverging integrals and implement the cut-off procedure. Together with this, we claim that the first approach is more convenient for the calculations than the second one.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

RKKY interaction in gapped or doped graphene

In our previous work (E. Kogan, Phys. Rev. B {\bf 84}, 115119 (2011)) we calculated RKKY interaction between two magnetic impurities in pristine graphene using the Green's functions (GF) in the coordinate -- imaginary time representation. Now we show that the calculations of the GF in this representation can be simplified by using the Feynman's trick, which allows to easily calculate RKKY interaction in gapped graphene. We also present calculations of the RKKY interaction in gapped or doped graphene using the coordinate -- imaginary frequency representation. Both representations, corresponding to calculation of the bubble diagram in Euclidean space, have an important advantage over those corresponding to calculation in Minkowskii space, which are very briefly reviewed in the Appendix to the present work. The former, in distinction to the latter, operate only with the convergent integrals from the start to the end of the calculation.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Symmetry classification of energy bands in graphene and silicene

We present the results of the symmetry classification of the electron energy bands in graphene and silicene using group theory algebra and the tight--binding approximation. The analysis is performed both in the absence and in the presence of the spin-orbit coupling. We also discuss the bands merging in the Brillouin zone symmetry points and the conditions for the latter to become Dirac points.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

While calculating RKKY interaction in graphene no theorist should do a cut-off without cause

In our previous work (E. Kogan, Phys. Rev. B 84, 115119 (2011)) we presented calculation of RKKY interaction between two magnetic impurities in graphene based on Matsubara Green's functions (MGF) in the coordinate -- imaginary time representation. Now we present the calculation based on MGF in the coordinate -- frequency representation. We claim that both approaches have an important advantage over those based on zero temperature Green's functions (ZTGF), which are very briefly reviewed in the beginning of the present work. The MGF approaches, in distinction to the ZTGF approaches, operate only with the convergent integrals from the start to the end of the calculation. The coordinate -- frequency representation for the MGF turns out to be as convenient as the coordinate -- imaginary time representation and allows to easily consider the cases of doped and gapped graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Why Dirac points in graphene are where they are?

We present a simple group theory explanation of the fact that the energy bands merge in the corners of the Brillouin zone for graphene and for two particular cases of Kagome lattice for arbitrary tight--binding Hamiltonian. We connect the linearity of the spectrum in the vicinity of these points for monolayer graphene, bilayer graphene for AA stacking and Kagome lattice with the properties of the conical points of the surface, known from geometry.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Frequency splitting of intervalley phonons in graphene

We study the thermal distribution of intervalley phonons in a graphene sheet. These phonons have two components with the same frequency. The degeneracy of the two modes is preserved by weak electron-phonon coupling. A sufficiently strong electron-phonon coupling, however, can result in a splitting into an optical and an acoustic phonon branch, which creates a fluctuating gap in the electronic spectrum. We describe these effects by treating the phonon distribution within a saddle-point approximation. Fluctuations around the saddle point indicate a Berezinskii-Kosterlitz-Thouless transition of the acoustic branch. This transition might be observable in the polarization of Raman scattered light.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Ising instability of a Holstein phonon mode in graphene

We study the thermal distribution of phonons in a graphene sheet. Due to the two electronic bands there are two out-of-plane phonon modes with respect to the two sublattices. One of these modes undergoes an Ising transition by spontaneously breaking the sublattice symmetry. We calculate the critical point, the renormalization of the phonon frequency and the average lattice distortion. This transition might be observable in Raman scattering and in transport properties.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Itinerant Ferromagnetism in the electronic localization limit

We present Hall effect, $R_{xy}(H)$, and magnetoresistance, $R_{xx}(H)$, measurements of ultrathin films of Ni, Co and Fe with thicknesses varying between 0.2-8 nm and resistances between 1 M$Ω$ - 100 $Ω.$ Both measurements show that films having resistance above a critical value, $R_{C}$, (thickness below a critical value, $d_{C}$) show no signs for ferromagnetism. Ferromagnetism appears only for films with $R<R_{C}$, where $R_{C}$ is material dependent. We raise the possibility that the reason for the absence of spontaneous magnetization is suppression of itinerant ferromagnetism by electronic disorder in the strong localization regime.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Quasi-localization and quasi-mobility edge for light atoms mixed with heavy ones

A mixture of light and heavy atoms is considered. We study the kinetics of the light atoms, scattered by the heavy ones, the latter undergoing slow diffusive motion. In three-dimensional space we claim the existence of a crossover region (in energy), which separates the states of the light atoms with fast diffusion and the states with slow diffusion; the latter is determined by the dephasing time. For the two dimensional case we have a transition between weak localization, observed when the dephasing length is less than the localization length (calculated for static scatterers), and strong localization observed in the opposite case.

0 citations0 reviewsNo code linkedOpen access