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Researcher profile

M. Kaveh

M. Kaveh contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.dis-nncond-mat.stat-mechphysics.comp-ph

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Published work

8 published item(s)

preprint2016arXiv

Critical behaviour of anisotropic magnets with quenched disorder: replica symmetry breaking studied by operator product expansion

We study critical behaviour of disordered magnets near four dimensions. We consider the system with explicit cubic anisotropy and scalar disorder and that with random direction of anisotropy axis. The quenched disorder is taken into account by replica method. Using the method of operator product expansion, we derive in the first order to $ε$ approximation the renormalization group equations taking into account possible replica symmetry breaking.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Influence of ageing on Raman spectra and the conductivity of monolayer graphene samples irradiated by heavy and light ions

The influence of long-term ageing (about one year) on the Raman scattering (RS) spectra and the temperature dependence of conductivity has been studied in two series of monolayer graphene samples irradiated by different doses of C$^{+}$ and Xe$^{+}$ ions. It is shown that the main result of ageing consists of changes in the intensity and position of D- and G- and 2D-lines in RS spectra and in an increase of the conductivity. The observed effects are explained in terms of an increase of the radius of the \textquotedblleft activated\textquotedblright{} area around structural defects.

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preprint2016arXiv

Transmission Resonances Anomaly in 1D Disordered Quantum Systems

Connections between the electron eigenstates and conductivity of one-dimensional disordered electron systems is studied in the framework of the tight-binding model. We show that for weak disorder only part of the states exhibit resonant transmission and contribute to the conductivity. The rest of the eigenvalues are not associated with peaks in transmission and the amplitudes of their wave functions do not exhibit a significant maxima within the sample. Moreover, unlike ordinary states, the lifetimes of these `hidden' modes either remain constant or even decrease (depending on the coupling with the leads) as the disorder becomes stronger. In a wide range of the disorder strengths, the averaged ratio of the number of transmission peaks to the total number of the eigenstates is independent of the degree of disorder and is close to the value $\sqrt{2/5}$, which was derived analytically in the weak-scattering approximation. These results are in perfect analogy to the spectral and transport properties of light in one-dimensional randomly inhomogeneous media, which provides strong grounds to believe that the existence of hidden, non-conducting modes is a general phenomenon inherent to 1D open random systems, and their fraction of the total density of states is the same for quantum particles and classical waves.

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preprint2015arXiv

Hopping magnetoresistance in ion irradiated monolayer graphene

Magnetoresistance (MR) of ion irradiated monolayer graphene samples with variable-range hopping (VRH) mechanism of conductivity was measured at temperatures down to $T = 1.8$ K in magnetic fields up to $B = 8$ T. It was observed that in perpendicular magnetic fields, hopping resistivity $R$ decreases, which corresponds to negative MR (NMR), while parallel magnetic field results in positive MR (PMR) at low temperatures. NMR is explained on the basis of the "orbital" model in which perpendicular magnetic field suppresses the destructive interference of many paths through the intermediate sites in the total probability of the long-distance tunneling in the VRH regime. At low fields, a quadratic dependence ($|ΔR/R|\sim B^2$) of NMR is observed, while at $B > B^*$, the quadratic dependence is replaced by the linear one. It was found that all NMR curves for different samples and different temperatures could be merged into common dependence when plotted as a function of $B/B^*$. It is shown that $B^*\sim T^{1/2}$ in agreement with predictions of the "orbital" model. The obtained values of $B^*$ allowed also to estimate the localization radius $ξ$ of charge carriers for samples with different degree of disorder. PMR in parallel magnetic fields is explained by suppression of hopping transitions via double occupied states due to alignment of electron spins.

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preprint2015arXiv

Localization of charge carriers in monolayer graphene gradually disordered by ion irradiation

Gradual localization of charge carriers was studied in a series of micro-size samples of monolayer graphene fabricated on the common large scale film and irradiated by different doses of C$^+$ ions with energy 35 keV. Measurements of the temperature dependence of conductivity and magnetoresistance in fields up to 4 T showed that at low disorder, the samples are in the regime of weak localization and antilocalization. Further increase of disorder leads to strong localization regime, when conductivity is described by the variable-range-hopping (VRH) mechanism. A crossover from the Mott regime to the Efros-Shklovskii regime of VRH is observed with decreasing temperature. Theoretical analysis of conductivity in both regimes showed a remarkably good agreement with experimental data.

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preprint2015arXiv

Raman scattering and electrical resistance of highly disordered graphene

Raman scattering (RS) spectra and current-voltage characteristics at room temperature were measured in six series of small samples fabricated by means of electron-beam lithography on the surface of a large size (5x5 mm) industrial monolayer graphene film. Samples were irradiated by different doses of C${}^+$ ion beam up to $10^{15}$ cm${}^{-2}$. It was observed that at the utmost degree of disorder, the Raman spectra lines disappear which is accompanied by the exponential increase of resistance and change in the current-voltage characteristics.These effects are explained by suggestion that highly disordered graphene film ceases to be a continuous and splits into separate fragments. The relationship between structure (intensity of RS lines) and sample resistance is defined. It is shown that the maximal resistance of the continuous film is of order of reciprocal value of the minimal graphene conductivity $πh/4e^2\approx 20$ kOhm.

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preprint2014arXiv

Energy bands in graphene: Comparison between the tight-binding model and {\it ab initio} calculations

We compare the classification of the electron bands in graphene, obtained by group theory algebra in the framework of tight-binding model (TBM), with that calculated in the density-functional theory (DFT) framework. Identification in the DFT band-structure of all eight energy bands (four valence and four conduction bands) corresponding to the TBM-derived energy bands is performed and corresponding analysis is presented. The four occupied (three $σ$- and one $π$-like) and three unoccupied (two $σ$- and one $π$-like) bands given by DFT closely correspond to those predicted by TBM, both by their symmetry and their dispersion law. However, the two lowest lying at the $Γ$-point unoccupied bands (one of them of a $σ$-like type and the other of a $π$-like one), are not of TBM type. According both to their symmetry and to the electron density these bands are plane waves orthogonal to the TBM valence bands; dispersion of these states can be determined unambiguously up to the Brillouin zone borders. On the other hand, the fourth unoccupied band given by the TBM, can be identified among those given by the DFT band calculations; it is situated rather high with respect to energy. The interaction of this band with the free-electron states is so strong, that it exists only in a part of $k$-space.

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