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E. J. Moon

E. J. Moon appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.str-elcond-mat.mtrl-scicond-mat.mes-hallcond-mat.supr-con

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Published work

8 published item(s)

preprint2016arXiv

Octahedral rotation patterns in strained EuFeO3 and other Pbnm perovskite films: Implications for hybrid improper ferroelectricity

We report the relationship between epitaxial strain and the crystallographic orientation of the in-phase rotation axis and A-site displacements in Pbnm-type perovskite films. Synchrotron diffraction measurements of EuFeO3 films under strain states ranging from 2% compressive to 0.9% tensile on cubic or rhombohedral substrates exhibit a combination of a-a+c- and a+a-c- rotational patterns. We compare the EuFeO3 behavior with previously reported experimental and theoretical work on strained Pbnm-type films on non-orthorhombic substrates, as well as additional measurements from LaGaO3, LaFeO3, and Eu0.7Sr0.3MnO3 films on SrTiO3. Compiling the results from various material systems reveals a general strain dependence in which compressive strain strongly favors a-a+c- and a+a-c- rotation patterns and tensile strain weakly favors a-a-c+ structures. In contrast, EuFeO3 films grown on Pbnm-type GdScO3 under 2.3% tensile strain take on a uniform a-a+c- rotation pattern imprinted from the substrate, despite strain energy considerations that favor the a-a-c+ pattern. These results point to the use of substrate imprinting as a more robust route than strain for tuning the crystallographic orientations of the octahedral rotations and A-site displacements needed to realize rotation-induced hybrid improper ferroelectricity in oxide heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Enhanced Spin and Electronic Reconstructions at the Cuprate-Manganite Interface

We report on a resonant soft X-ray spectroscopy study of the electronic and magnetic structure of the cuprate-manganite interface. Polarized X-ray spectroscopy measurements taken at the Cu L edge reveal up to a five-fold increase in the dichroic signal as compared to past experimental and theoretical values. Furthermore an increase in the degree of interlayer charge transfer up to 0.25e (where e is charge of an electron) per copper ion is observed leading to a profound reconstruction in the orbital scheme for these interfacial copper ions. It is inferred that these enhancement are related to an increase in TMI observed for manganite layers grown with rapidly modulated flux.

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preprint2013arXiv

Strain mediated suppression of the metal-insulator transition in EuNiO3 thin films

Ultrathin epitaxial films of EuNiO3 were grown on a series of substrates traversing highly compressive (- 2.4%) to highly tensile (2.5%) lattice mismatch. X-ray diffraction measurements showed the expected c-lattice parameter shift for compressive strain, but no detectable shift for tensilely strained substrates, while reciprocal space mapping confirmed the tensile strained film maintained epitaxial coherence. Transport measurements showed a successively (from tensile to compressive) lower resistance and a complete suppression of the metalinsulator transition at highly compressive lattice mismatch. Corroborating these findings, X-ray absorption spectroscopy measurements revealed a strong multiplet splitting in the tensile samples that progressively weakens with increasing compressive strain that, combined with cluster calculations, showed enhanced covalence between Ni-d and O-p orbitals leads to the metallic state.

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preprint2012arXiv

Field-effect diode based on electron-induced Mott transition in NdNiO3

We studied an electron-induced metal-insulator transition in a two-terminal device based on oxide NdNiO3. In our device, the NdNiO3 is electrostatically doped by the voltage applied between the terminals, resulting in an asymmetric conductivity with respect to the bias polarity. The asymmetry is temperature-dependent and is most significant near the metal-insulator transition. The I-V characteristics exhibit a strong dependence both on the thermal history and the history of the applied voltage bias. Our two-terminal device represents a simple and efficient route for studies of the effect of electron doping on the metal-insulator transition.

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preprint2012arXiv

Strain-controlled band engineering and self-doping in ultrathin LaNiO$_3$ films

We report on a systematic study of the temperature-dependent Hall coefficient and thermoelectric power in ultra-thin metallic LaNiO$_3$ films that reveal a strain-induced, self-doping carrier transition that is inaccessible in the bulk. As the film strain varies from compressive to tensile at fixed composition and stoichiometry, the transport coefficients evolve in a manner strikingly similar to those of bulk hole-doped superconducting cuprates with varying doping level. Density functional calculations reveal that the strain-induced changes in the transport properties are due to self-doping in the low-energy electronic band structure. The results imply that thin-film epitaxy can serve as a new means to achieve hole-doping in other (negative) charge-transfer gap transition metal oxides without resorting to chemical substitution.

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preprint2011arXiv

Asymmetric orbital-lattice interactions in ultra-thin correlated oxide films

Using resonant X-ray spectroscopies combined with density functional calculations, we find an asymmetric bi-axial strain-induced $d$-orbital response in ultra-thin films of the correlated metal LaNiO$_3$ which are not accessible in the bulk. The sign of the misfit strain governs the stability of an octahedral "breathing" distortion, which, in turn, produces an emergent charge-ordered ground state with an altered ligand-hole density and bond covalency. Control of this new mechanism opens a pathway to rational orbital engineering, providing a platform for artificially designed Mott materials.

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preprint2011arXiv

Epitaxial Stabilization of Ultrathin Films of Rare-Earth Nickelates

We report on the synthesis of ultrathin films of highly distorted EuNiO3 (ENO) grown by interrupted pulse laser epitaxy on YAlO3 (YAO) substrates. Through mapping the phase space of nickelate thin film epitaxy, the optimal growth temperatures were found to scale linearly with the Goldschmidt tolerance factor. Considering the gibbs energy of the expanding film, this empirical trend is discussed in terms of epitaxial stabilization and the escalation of the lattice energy due to lattice distortions and decreasing symmetry. These findings are fundamental to other complex oxide perovskites, and provide a route to the synthesis of other perovskite structures in ultrathin-film form.

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preprint2011arXiv

Strain dependent transport properties of the quasi two-dimensional correlated metal, LaNiO$_{3}$

We explore the electrical transport and magneto-conductance in quasi two-dimensional strongly correlated ultrathin films of LaNiO$_{3}$ (LNO) to investigate the effect of hetero-epitaxial strain on electron-electron and electron-lattice interactions from the low to intermediate temperature range (2K$\sim$170K). The fully epitaxial 10 unit cell thick films spanning tensile strain up to $\sim4%$ are used to investigate effects of enhanced carrier localization driven by a combination of weak localization and electron-electron interactions at low temperatures. The magneto-conductance data shows the importance of the increased contribution of weak localization to low temperature quantum corrections. The obtained results demonstrate that with increasing tensile strain and reduced temperature the quantum confined LNO system gradually evolves from the Mott into the Mott-Anderson regime.

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