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E. D. Bourret-Courchesne

E. D. Bourret-Courchesne appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sci cond-mat.str-el cond-mat.supr-con nucl-ex

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preprint2015arXiv

Spin dynamics near a putative antiferromagnetic quantum critical point in Cu substituted BaFe$_2$As$_2$ and its relation to high-temperature superconductivity

We present the results of elastic and inelastic neutron scattering measurements on non-superconducting Ba(Fe${_{0.957}}$Cu${_{0.043}}$)${_2}$As${_2}$, a composition close to a quantum critical point between AFM ordered and paramagnetic phases. By comparing these results with the spin fluctuations in the low Cu composition as well as the parent compound BaFe$_2$As$_2$ and superconducting Ba(Fe$_{1-x}$Ni$_x$)$_2$As$_2$ compounds, we demonstrate that paramagnon-like spin fluctuations are evident in the antiferromagnetically ordered state of Ba(Fe$_{0.957}$Cu$_{0.043}$)$_2$As$_2$, which is distinct from the AFM-like spin fluctuations in the superconducting compounds. Our observations suggest that Cu substitution decouples the interaction between quasiparticles and the spin fluctuations. We also show that the spin-spin correlation length, ${ξ(T)}$, increases rapidly as the temperature is lowered and find ${ω/T}$ scaling behavior, the hallmark of quantum criticality, at an antiferromagnetic quantum critical point.

preprint2015arXiv

Structural and antiferromagnetic properties of Ba(Fe$_{1-x-y}$Co$_x$Rh$_y$)$_2$As$_2$ compounds

We present a systematic investigation of the electrical, structural, and antiferromagnetic properties for the series of Ba(Fe$_{1-x-y}$Co$_{x}$Rh$_{y}$)$_{2}$As$_{2}$ compounds with fixed $x \approx$ 0.027 and $ 0 \leq y \leq 0.035$. We compare our results for the Co-Rh doped Ba(Fe$_{1-x-y}$Co$_{x}$Rh$_{y}$)$_{2}$As$_{2}$ compounds with the Co doped Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$ compounds. We demonstrate that the electrical, structural, antiferromangetic, and superconducting properties of the Co-Rh doped compounds are similar to the properties of the Co doped compounds. We find that the overall behaviors of Ba(Fe$_{1-x-y}$Co$_{x}$Rh$_{y}$)$_{2}$As$_{2}$ and Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$ compounds are very similar when the total number of extra electrons per Fe/$TM$ ($TM$ = transition metal) site is considered, which is consistent with the rigid band model. Despite the similarity, we find that the details of the transitions, for example, the temperature difference between the structural and antiferromagnetic transition temperatures and the incommensurability of the antiferromangetic peaks, are different between Ba(Fe$_{1-x-y}$Co$_{x}$Rh$_{y}$)$_{2}$As$_{2}$ and Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$ compounds.

preprint2011arXiv

Single Crystal Growth of Ga2(SexTe1-x)3 Semiconductors and Defect Studies via Positron Annihilation Spectroscopy

Small single crystals of Ga2(SexTe1-x)3 semiconductors, for x = 0.1, 0.2, 0.3, were obtained via modified Bridgman growth techniques. High-resolution powder x-ray diffractometry confirms a zincblende cubic structure, with additional satellite peaks observed near the (111) Bragg line. This suggests the presence of ordered vacancy planes along the [111] direction that have been previously observed in Ga2Te3. Defect studies via positron annihilation spectroscopy show an average positron lifetime of ~400 ps in bulk as-grown specimens. Such a large lifetime suggests that the positron annihilation sites in these materials are dominated by defects. Moreover, analyzing the electron momenta via coincidence Doppler broadening measurements suggests a strong presence of large open-volume defects, likely to be vacancy clusters or voids.

preprint2010arXiv

Optical, luminescence, and scintillation properties of ZnO and ZnO:Ga ceramics

Uniaxial hot pressing has been used to obtain ceramics based on zinc oxide, and their optical, x-ray-structure, luminescence, and scintillation characteristics have been studied. It is shown that, by changing the concentration of the dopant (Ga) and the codopant (N), it is possible to change the intensities of the edge band (397.5 nm) and the intraband luminescence (510 nm) of the ZnO luminescence, as well as their ratio. Undoped ZnO ceramic has good transparency in the visible region and fairly high luminous yield: 9050 photons per MeV. Ceramic ZnO:Ga possesses intense edge luminescence with a falloff time of about 1 ns.