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E. Cimpoiasu

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el cond-mat.supr-con

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preprint2012arXiv

Anisotropic magnetoresistance of bulk carbon nanotube sheets

We have measured the magnetoresistance of stretched sheets of carbon nanotubes in temperatures ranging from 2 K to 300 K and in magnetic fields up to 9 T, oriented either perpendicular or parallel to the plane of the sheets. The samples have been partially aligned by post-fabrication stretching, such that the direction of stretching was either parallel or perpendicular to the direction of applied electric current. We have observed large differences between the magnetoresistance measured under the two field orientations, most pronounced at the lowest temperatures, highest fields, and for the laterally-aligned sample. Treatment of the sheets with nitric acid affects this anisotropy. We analyzed the results within the theoretical framework of weak and strong localization and concluded that the anisotropy bears the mark of a more unusual phenomenon, possibly magnetically-induced mechanical strain.

preprint2004arXiv

Aluminum Oxide Layers as Possible Components for Layered Tunnel Barriers

We have studied transport properties of Nb/Al/AlOx/Nb tunnel junctions with ultrathin aluminum oxide layers formed by (i) thermal oxidation and (ii) plasma oxidation, before and after rapid thermal post-annealing of the completed structures at temperatures up to 550 deg C. Post-annealing at temperatures above 300 deg C results in a significant decrease of the tunneling conductance of thermally-grown barriers, while plasma-grown barriers start to change only at annealing temperatures above 450 deg C. Fitting the experimental I-V curves of the junctions using the results of the microscopic theory of direct tunneling shows that the annealing of thermally-grown oxides at temperatures above 300 deg C results in a substantial increase of their average tunnel barriers height, from ~1.8 eV to ~2.45 eV, versus the practically unchanged height of ~2.0 eV for plasma-grown layers. This difference, together with high endurance of annealed barriers under electric stress (breakdown field above 10 MV/cm) may enable all-AlOx and SiO2/AlOx layered "crested" barriers for advanced floating-gate memory applications.

preprint1999arXiv

Relationship Between Conductivity and Phase Coherence Length in Cuprates

The large ($10^2 - 10^5$) and strongly temperature dependent resistive anisotropy $η= (σ_{ab}/σ_c)^{1/2}$ of cuprates perhaps holds the key to understanding their normal state in-plane $σ_{ab}$ and out-of-plane $σ_{c}$ conductivities. It can be shown that $η$ is determined by the ratio of the phase coherence lengths $\ell_i$ in the respective directions: $σ_{ab}/σ_c = \ell_{ab}^2/\ell_{c}^2$. In layered crystals in which the out-of-plane transport is incoherent, $\ell_{c}$ is fixed, equal to the interlayer spacing. As a result, the T-dependence of $η$ is determined by that of $\ell_{ab}$, and vice versa, the in-plane phase coherence length can be obtained directly by measuring the resistive anisotropy. We present data for hole-doped $YBa_2Cu_3O_y$ ($6.3 < y < 6.9$) and $Y_{1-x}Pr_xBa_2Cu_3O_{7-δ}$ ($0 < x \leq 0.55$) and show that $σ_{ab}$ of crystals with different doping levels can be well described by a two parameter universal function of the in-plane phase coherence length. In the electron-doped $Nd_{2-x}Ce_{x}CuO_{4-y}$, the dependence $σ_{ab}(η)$ indicates a crossover from incoherent to coherent transport in the c-direction.