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Drew B. Riley

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Published work

2 published item(s)

preprint2022arXiv

A quasi steady-state measurement of exciton diffusion lengths in organic semiconductors

Understanding the role that exciton diffusion plays in organic solar cells is a crucial to understanding the recent rise in power conversion effciencies brought about by non-fullerene acceptors (NFA). Established methods for measuring exciton diffusion lengths in organic solar cells require specialized equipment designed for measuring high-resolution time-resolved photoluminescence (TRPL). Here we introduce a technique, coined pulsed-PLQY, to measure the diffusion length of organic solar cells without any temporal measurements. Using a Monte-Carlo model we simulate the dynamics within a thin film semiconductor and analyse the results using both pulsed-PLQY and TRPL methods. We find that pulsed-PLQY has a larger operational region and depends less on the excitation fuence than the TRPL approach. We validate these simulated results by preforming both measurements on organic thin films and reproduce the predicted trends. Pulsed-PLQY is then used to evaluate the diffusion length in a variety of technologically relevant organic semiconductors. It is found that the diffusion lengths in NFA's are much larger than in the benchmark fullerene and that this increase is driven by an increase in diffusivity.

preprint2019arXiv

Ultrafast acoustic phonon scattering in CH$_3$NH$_3$PbI$_3$ revealed by femtosecond four-wave mixing

Carrier scattering processes are studied in CH$_3$NH$_3$PbI$_3$ using temperature-dependent four-wave mixing experiments. Our results indicate that scattering by ionized impurities limits the interband dephasing time (T$_2$) below 30~K, with strong electron-phonon scattering dominating at higher temperatures (with a timescale of 125 fs at 100 K). Our theoretical simulations provide quantitative agreement with the measured carrier scattering rate and show that the rate of acoustic phonon scattering is enhanced by strong spin-orbit coupling, which modifies the band-edge density of states. The Rashba coefficient extracted from fitting the experimental results ($γ_c=2$ eV angstrom) is in agreement with calculations of the surface Rashba effect and recent experiments using the photogalvanic effect on thin films.