Researcher profile

Daniel Webber

Daniel Webber contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

On-the-fly 3D metrology of volumetric additive manufacturing

Additive manufacturing techniques are revolutionizing product development by enabling fast turnaround from design to fabrication. However, the throughput of the rapid prototyping pipeline remains constrained by print optimization, requiring multiple iterations of fabrication and ex-situ metrology. Despite the need for a suitable technology, robust in-situ shape measurement of an entire print is not currently available with any additive manufacturing modality. Here, we address this shortcoming by demonstrating fully simultaneous 3D metrology and printing. We exploit the dramatic increase in light scattering by a photoresin during gelation for real-time 3D imaging of prints during tomographic volumetric additive manufacturing. Tomographic imaging of the light scattering density in the build volume yields quantitative, artifact-free 3D + time models of cured objects that are accurate to below 1% of the size of the print. By integrating shape measurement into the printing process, our work paves the way for next-generation rapid prototyping with real-time defect detection and correction.

preprint2019arXiv

Ultrafast acoustic phonon scattering in CH$_3$NH$_3$PbI$_3$ revealed by femtosecond four-wave mixing

Carrier scattering processes are studied in CH$_3$NH$_3$PbI$_3$ using temperature-dependent four-wave mixing experiments. Our results indicate that scattering by ionized impurities limits the interband dephasing time (T$_2$) below 30~K, with strong electron-phonon scattering dominating at higher temperatures (with a timescale of 125 fs at 100 K). Our theoretical simulations provide quantitative agreement with the measured carrier scattering rate and show that the rate of acoustic phonon scattering is enhanced by strong spin-orbit coupling, which modifies the band-edge density of states. The Rashba coefficient extracted from fitting the experimental results ($γ_c=2$ eV angstrom) is in agreement with calculations of the surface Rashba effect and recent experiments using the photogalvanic effect on thin films.