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Doron Naveh

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cond-mat.mtrl-sci cond-mat.mes-hall physics.app-ph physics.optics

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preprint2024arXiv

Piezoelectric Electrostatic Superlattices in Monolayer MoS$_2$

Modulation of electronic properties of materials by electric fields is central to the operation of modern semiconductor devices, providing access to complex electronic behaviors and greater freedom in tuning the energy bands of materials. Here, we explore one-dimensional superlattices induced by a confining electrostatic potential in monolayer MoS$_2$, a prototypical two-dimensional semiconductor. Using first-principles calculations, we show that periodic potentials applied to monolayer MoS$_2$ induce electrostatic superlattices in which the response is dominated by structural distortions relative to purely electronic effects. These structural distortions reduce the intrinsic band gap of the monolayer substantially while also polarizing the monolayer through piezoelectric coupling, resulting in spatial separation of charge carriers as well as Stark shifts that produce dispersive minibands. Importantly, these minibands inherit the valley-selective magnetic properties of monolayer MoS$_2$, enabling fine control over spin-valley coupling in MoS$_2$ and similar transition-metal dichalcogenides.

preprint2021arXiv

Amorphous Selenium Mie Resonators for Infrared Meta-Optics

Applying direct growth and deposition of optical surfaces holds great promise for the advancement of future nanophotonic technologies. Here, we report on a chemical vapor deposition (CVD) technique for depositing amorphous selenium (a-Se) spheres by desorption of selenium from Bi2Se3 and re-adsorption on the substrate. We utilize this process to grow scalable, large area Se spheres on several substrates and characterize their Mie-resonant response in the mid-infrared (MIR) spectral range. We demonstrate size-tunable Mie resonances spanning the 2-16 um spectral range, for single isolated resonators and large area ensembles, respectively. We further demonstrate strong absorption dips of up to 90% in ensembles of particles in a broad MIR range. Finally, we show that ultra-high-Q resonances arise in the case where Se Mie-resonators are coupled to low-loss epsilon-near-zero (ENZ) substrates. These findings demonstrate the enabling potential of amorphous Selenium as a versatile and tunable nanophotonic material that may open up avenues for on-chip MIR spectroscopy, chemical sensing, spectral imaging and large area metasurface fabrication.

preprint2016arXiv

Protective Molecular Passivation of Black Phosphorous

Black phosphorous (BP) is one of the most interesting layered materials, bearing promising potential for emerging electronic and optoelectronic device technologies. The crystalline structure of BP displays in-plane anisotropy in addition to the out-of-plane anisotropy characteristic to layered materials. Therefore, BP supports anisotropic optical and transport responses that can enable unique device architectures. Its thickness-dependent direct bandgap varies in the range of around 0.3-2.0 eV (from single-layer to bulk, respectively), making BP suitable to optoelectronics in a broad spectral range. With high room-temperature mobility, exceeding 1,000 cm2V-1s-1 in thin films, BP is also a very promising material for electronics. However, BP is sensitive to oxygen and humidity due to its three-fold coordinated atoms. The surface electron lone pairs are reactive and can lead to structural degradation upon exposure to air, leading to significant device performance degradation in ambient condition. Here, we report a viable solution to overcome degradation in few-layer BP by passivating the surface with self-assembled monolayers of octadecyltrichlorosilane (OTS) that provide long-term stability in ambient conditions. Importantly, we show that this treatment does not cause any undesired carrier doping of the bulk channel material, thanks to the emergent hierarchical interface structure. Our approach is compatible with conventional electronic materials processing technologies thus providing an immediate route toward practical applications in BP devices.

preprint2014arXiv

Direct observation of patterned self-assembled monolayers and bilayers on silica-on-silicon surfaces

Self-assembled monolayers (SAMs) of organic molecules are widely employed in surface chemistry and biology, and serve as ultra-fine lithographic resists. Due to their small thickness of only a few nanometers, the analysis of patterned monolayer surfaces using conventional methods requires thorough point-by-point scanning using complicated equipment. In the work reported herein, patterned monolayers are simply and directly observed using a bright-field optical microscope. The monolayers modify the spectral reflectivity pattern of a silica-on-silicon thin film, and introduce a contrast between bare and monolayer-coated regions of the substrate. The method can also distinguish between regions of single-layer and bi-layer coatings. The observations are supported by calculations, and by control experiments using atomic force microscopy, scanning Raman spectrometry and scanning reflection spectrometry. The results are useful for electro-optic devices, selective wafer-bonding protocols and lab-on-a-chip test systems. We show here that chemical reactions leading to the formation of a bi-layer of SAMs correspond to an optical contrast visible to the naked eye, enabling such detection to provide a simple, yet effective differentiation between monolayers and adsorbed analytes with possible applications for chemical and/or biological sensing.

preprint2011arXiv

Strain-driven light polarization switching in deep ultraviolet nitride emitters

Residual strain plays a critical role in determining the crystalline quality of nitride epitaxial layers and in modifying their band structure; this often leads to several interesting physical phenomena. It is found, for example, that compressive strain in AlxGa1-xN layers grown on AlyGa1-yN (x<y) templates results in an anti-crossing of the valence bands at considerably much higher Al composition than expected. This happens even in the presence of large and negative crystal field splitting energy for AlxGa1-xN layers. A judicious magnitude of the compressive strain can support vertical light emission (out of the c-plane) from AlxGa1-xN quantum wells up to x\approx 0.80, which is desirable for the development of deep ultraviolet light-emitting diodes designed to operate below 250nm with transverse electric polarization characteristics.

preprint2010arXiv

Tunable band gaps in bilayer graphene-BN heterostructures

We investigate band-gap tuning of bilayer graphene between hexagonal boron nitride sheets, by external electric fields. Using density functional theory, we show that the gap is continuously tunable from 0 to 0.2 eV, and is robust to stacking disorder. Moreover, boron nitride sheets do not alter the fundamental response from that of free-standing bilayer graphene, apart from additional screening. The calculations suggest that the graphene-boron nitride heterostructures could provide a viable route to graphene-based electronic devices.