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Ashwin Ramasubramaniam

Ashwin Ramasubramaniam appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.chem-ph

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Published work

9 published item(s)

preprint2024arXiv

Piezoelectric Electrostatic Superlattices in Monolayer MoS$_2$

Modulation of electronic properties of materials by electric fields is central to the operation of modern semiconductor devices, providing access to complex electronic behaviors and greater freedom in tuning the energy bands of materials. Here, we explore one-dimensional superlattices induced by a confining electrostatic potential in monolayer MoS$_2$, a prototypical two-dimensional semiconductor. Using first-principles calculations, we show that periodic potentials applied to monolayer MoS$_2$ induce electrostatic superlattices in which the response is dominated by structural distortions relative to purely electronic effects. These structural distortions reduce the intrinsic band gap of the monolayer substantially while also polarizing the monolayer through piezoelectric coupling, resulting in spatial separation of charge carriers as well as Stark shifts that produce dispersive minibands. Importantly, these minibands inherit the valley-selective magnetic properties of monolayer MoS$_2$, enabling fine control over spin-valley coupling in MoS$_2$ and similar transition-metal dichalcogenides.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Catalysts for the hydrogen evolution reaction in alkaline medium: Configuring a cooperative mechanism at the Ag-Ag$_2$S-MoS$_2$ interface

Designing electrocatalysts for HER in alkaline conditions to overcome the sluggish kinetics associated with the additional water dissociation step is a recognized challenge in promoting the hydrogen economy. To this end, delicately tuning the atomic-scale structure and surface composition of nanoparticles is a common strategy and, specifically, making use of hybrid structures, can produce synergistic effects that lead to highly active catalysts. Here, we present a core-shell catalyst of Ag@MoS$_2$ that shows promising results towards the hydrogen evolution reaction (HER) in both 0.5 M H2SO4 and 0.5 M KOH. In this hybrid structure, the MoS$_2$ shell is strained and defective, and charge transfer occurs between the conductive core and the shell, contributing to the electrocatalytic activity. The shelling process results in a large fraction of Ag$_2$S in the cores, and adjusting the relative fractions of Ag, Ag$_2$S, and MoS$_2$ leads to improved catalytic activity and fast charge-transfer kinetics. We suggest that the enhancement of alkaline HER is associated with a cooperative effect of the interfaces, where the Ag(I) sites in Ag$_2$S drive the water dissociation step, and the formed hydrogen subsequently recombines on the defective MoS$_2$ shell. This study demonstrates the benefits of hybrid structures as functional nanomaterials and provides a scheme to activate MoS$_2$ for HER in alkaline conditions.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Activation of new Raman modes by inversion symmetry breaking in type II Weyl semimetal candidate T'-MoTe2

We synthesized distorted octahedral(T') molybdenum ditelluride (MoTe2) and investigated its vibrational properties with Raman spectroscopy, density functional theory and symmetry analysis. Compared to the results from high temperature centrosymmetric monoclinic (T'mo) phase, four new Raman bands emerge in the low temperature orthorhombic (T'or) phase, which was recently predicted to be a type II Weyl semimetal. Crystal-angle-dependent, light-polarization-resolved measurements indicate that all the observed Raman peaks belong to two categories: those vibrating along the zigzag Mo atomic chain (z-mode) and those vibrating in the mirror plane (m-mode) perpendicular to the zigzag chain. Interestingly the low energy shear z-mode and shear m-mode, absent from the T'mo spectra, become activated when sample cooling induces a phase transition to the T'or crystal structure. We interpret this observation as a consequence of inversion-symmetry breaking, which is crucial for the existence of Weyl fermions in the layered crystal. Our temperature dependent Raman measurements further show that both the high energy m-mode at 130 cm-1 and the low energy shear m-mode at 12 cm-1 provide useful gauges for monitoring the broken inversion symmetry in the crystal.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Inversion-symmetry-breaking-activated shear Raman bands in $T'$-MoTe$_2$

Type-II Weyl fermion nodes, located at the touching points between electron and hole pockets, have been recently predicted to occur in distorted octahedral ($T'$) transition metal dichalcogenide semimetals, contingent upon the condition that the layered crystal has the noncentrosymmetric orthorhombic ($T'_{or}$) stacking. Here, we report on the emergence of two shear Raman bands activated by inversion symmetry breaking in $T'$-MoTe$_2$ due to sample cooling. Polarization and crystal orientation resolved measurements further point to a phase transition from the monoclinic ($T'_{mo}$) structure to the desired $T'_{or}$ lattice. These results provide spectroscopic evidence that low-temperature $T'$-MoTe$_2$ is suitable for probing type-II Weyl physics.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Protective Molecular Passivation of Black Phosphorous

Black phosphorous (BP) is one of the most interesting layered materials, bearing promising potential for emerging electronic and optoelectronic device technologies. The crystalline structure of BP displays in-plane anisotropy in addition to the out-of-plane anisotropy characteristic to layered materials. Therefore, BP supports anisotropic optical and transport responses that can enable unique device architectures. Its thickness-dependent direct bandgap varies in the range of around 0.3-2.0 eV (from single-layer to bulk, respectively), making BP suitable to optoelectronics in a broad spectral range. With high room-temperature mobility, exceeding 1,000 cm2V-1s-1 in thin films, BP is also a very promising material for electronics. However, BP is sensitive to oxygen and humidity due to its three-fold coordinated atoms. The surface electron lone pairs are reactive and can lead to structural degradation upon exposure to air, leading to significant device performance degradation in ambient condition. Here, we report a viable solution to overcome degradation in few-layer BP by passivating the surface with self-assembled monolayers of octadecyltrichlorosilane (OTS) that provide long-term stability in ambient conditions. Importantly, we show that this treatment does not cause any undesired carrier doping of the bulk channel material, thanks to the emergent hierarchical interface structure. Our approach is compatible with conventional electronic materials processing technologies thus providing an immediate route toward practical applications in BP devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Raman scattering and anomalous Stokes anti-Stokes ratio in MoTe2 atomic layers

Stokes and anti-Stokes Raman scattering are performed on atomic layers of hexagonal molybdenum ditelluride (MoTe2), a prototypical transition metal dichalcogenide (TMDC) semiconductor. The data reveal all six types of zone center optical phonons, along with their corresponding Davydov splittings, which have been challenging to see in other TMDCs. We discover that the anti-Stokes Raman intensity of the low energy layer-breathing mode becomes more intense than the Stokes peak under certain experimental conditions, and find the effect to be tunable by excitation frequency and number of atomic layers. These observations are interpreted as a result of resonance effects arising from the C excitons in the vicinity of the Brillouin zone center in the photon-electron-phonon interaction process.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Two-Dimensional Material Nanophotonics

The emerging two-dimensional (2D) materials exhibit a wide range of electronic properties, ranging from insulating hexagonal boron nitride, semiconducting transition metal dichalcogenides such as molybdenum disulfide, to semi-metallic graphene. Here, we first review the optical properties and applications of a variety of 2D materials, followed by two different approaches to enhance their interactions with light: through their integration with external photonic structures and through their intrinsic polaritonic resonances. Finally, we cover a narrow bandgap layered material, black phosphorus, which serendipitously bridges the zero gap graphene and the relatively large-bandgap TMDCs. The plethora of 2D materials and their heterostructures, together with the approaches for enhancing light-matter interaction offers the promise of scientific discoveries and nanophotonics technologies across a wide range of electromagnetic spectrum.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Comment on "Gap opening in graphene by shear strain"

G. Cocco, E. Cadelano, and L. Colombo [Phys. Rev. B 81, 241412(R) (2010)] have suggested that combinations of shear and uniaxial strain can be used to open a band gap in graphene at much lower levels of strain than with the application of unaxial strain alone. They employed a unit cell of graphene in their studies and applied the Cauchy-Born rule to model external strain. Consequently, an important aspect of the mechanical behavior of membranes, namely buckling and wrinkling under external strain, and the attendant coupling with electronic structure was ignored in their analysis. Upon doing so, the apparent band gap that appears in the range of 15-20% shear strain under the Cauchy-Born assumption is shown to vanish. The gapless spectrum of graphene is found to persist under large shear strains as well as large combinations of shear and uniaxial strain.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Tunable band gaps in bilayer graphene-BN heterostructures

We investigate band-gap tuning of bilayer graphene between hexagonal boron nitride sheets, by external electric fields. Using density functional theory, we show that the gap is continuously tunable from 0 to 0.2 eV, and is robust to stacking disorder. Moreover, boron nitride sheets do not alter the fundamental response from that of free-standing bilayer graphene, apart from additional screening. The calculations suggest that the graphene-boron nitride heterostructures could provide a viable route to graphene-based electronic devices.

0 citations0 reviewsNo code linkedOpen access