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Dongping Liu

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3 published item(s)

preprint2026arXiv

A Qualitative Test-Risk Mechanism for Scaling Behavior in Normalized Residual Networks

The scaling behavior, in which test performance often improves as model size and data increase, is a central empirical phenomenon in modern deep learning, yet its theoretical basis remains incomplete. In this paper, we study depth expansion in normalized residual networks: starting from a trained model in an old hypothesis class, we insert a new residual block at an intermediate layer and ask when such an expansion can yield a provable improvement in test risk. We develop a unified framework that decomposes this question into representational gain, optimization gain, and generalization transfer. First, under a first-order descent condition near zero initialization, we prove that the expanded hypothesis class contains an auxiliary jumpboard model with strictly smaller population risk than the original model. Second, under norm control tailored to post-normalized residual architectures, we establish a norm-based Rademacher complexity bound for the expanded model class. These ingredients lead to two complementary test-risk guarantees: one route passes through population risk and is tighter when a positive population margin is available, while the other works directly at the train/test level, avoids Hoeffding transfer, and is more robust in degenerate regimes. Together, these results provide a theorem-driven mechanism under which residual depth expansion can improve test performance in normalized residual networks. More broadly, they suggest that scaling is inherently joint: depth creates new improving directions, width enhances the finite-sample observability of weak signals, and data determines whether the statistical cost of expansion can be controlled.

preprint2026arXiv

FollowTable: A Benchmark for Instruction-Following Table Retrieval

Table Retrieval (TR) has traditionally been formulated as an ad-hoc retrieval problem, where relevance is primarily determined by topical semantic similarity. With the growing adoption of LLM-based agentic systems, access to structured data is increasingly instruction-driven, where relevance is conditional on explicit content and schema constraints rather than topical similarity alone. We therefore formalize Instruction-Following Table Retrieval (IFTR), a new task that requires models to jointly satisfy topical relevance and fine-grained instruction constraints. We identify two core challenges in IFTR: (i) sensitivity to content scope, such as inclusion and exclusion constraints, and (ii) awareness of schema-grounded requirements, including column semantics and representation granularity--capabilities largely absent in existing retrievers. To support systematic evaluation, we introduce FollowTable, the first large-scale benchmark for IFTR, constructed via a taxonomy-driven annotation pipeline. We further propose a new metric, termed the Instruction Responsiveness Score, to evaluate whether retrieval rankings consistently adapt to user instructions relative to a topic-only baseline. Our results indicate that existing retrieval models struggle to follow fine-grained instructions over tabular data. In particular, they exhibit systematic biases toward surface-level semantic cues and remain limited in handling schema-grounded constraints, highlighting substantial room for future improvements.

preprint2013arXiv

Electric control of spin in monolayer WSe2 field effect transistors

We report a first principles theoretical investigation of quantum transport in monolayer WSe2 field effect transistor (FET). Due to a strong spin-orbit interaction (SOI) and the atomic structure of the two-dimensional (2D) lattice, monolayer WSe2 has an interesting electronic structure that exhibits Zeeman-like up-down spin texture near the K and K' points of the Brillouin zone. In a FET, the gate electric field induces an extra, externally tunable SOI that re-orients the spins into a Rashba-like texture thereby realizing electric control of the spin. Quantum transport is modulated by the spin texture, namely by if the spin orientation of the carrier after the gated channel region, matches or miss-matches that of the FET drain electrode. The carrier current in the FET is labelled both the spin index and the valley index, realizing spintronics and valleytronics in the same device.