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Researcher profile

Donghan Kim

Donghan Kim contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elq-fin.MFcond-mat.supr-conmath.PR

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Published work

8 published item(s)

preprint2025arXiv

Low-dimensionality-induced tunable ferromagnetism in SrRuO$_3$ ultrathin films

Quantum materials near electronic or magnetic phase boundaries exhibit enhanced tunability, as their emergent properties become highly sensitive to external perturbations. Here, we demonstrate precise control of ferromagnetism in a SrRuO$_3$ ultrathin film, where a high density of states (DOS), arising from low-dimensional quantum states, places the system at the crossover between a non-magnetic and bulk ferromagnetic state. Using spin- and angle-resolved photoemission spectroscopy (SRPES/ARPES), transport measurements, and theoretical calculations, we systematically tune the Fermi level via electron doping across the high-DOS point. We directly visualize the spin-split band structure and reveal its influence on both magnetic and transport properties. Our findings provide compelling evidence that magnetism can be engineered through DOS control at a phase crossover, establishing a pathway for the rational design of tunable quantum materials.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Concentration of measure for Graphon particle system

We study heterogeneously interacting diffusive particle systems with mean-field type interaction characterized by an underlying graphon and their finite particle approximations. Under suitable conditions, we obtain exponential concentration estimates over a finite time horizon for both 1 and 2 Wasserstein distances between the empirical measures of the finite particle systems and the averaged law of the graphon system, extending the work of Bayraktar-Wu.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Heteroepitaxial control of Fermi liquid, Hund metal, and Mott insulator phases in the single-atomic-layer limit

Interfaces between dissimilar correlated oxides can offer devices with versatile functionalities. In that respect, manipulating and measuring novel physical properties of oxide heterointerfaces are highly desired. Yet, despite extensive studies, obtaining direct information on their momentum-resolved electronic structure remains a great challenge. This is because most correlated interfacial phenomena appear within a few atomic layers from the interface, thus limiting the application of available experimental probes. Here, we utilize atomic-scale epitaxy and photoemission spectroscopy to demonstrate the interface control of correlated electronic phases in atomic-scale ruthenate--titanate heterostructures. While bulk SrRuO$_3$ is a ferromagnetic metal, the heterointerfaces exclusively realize three distinct correlated phases in the single-atomic-layer limit. Our theory reveals that atomic-scale structural proximity effects lead to the emergence of Fermi liquid, Hund metal, and Mott insulator phases in the quantum-confined SrRuO$_3$. These results highlight the extensive interfacial tunability of electronic phases, hitherto hidden in the atomically thin correlated heterostructure.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Market-to-book Ratio in Stochastic Portfolio Theory

We study market-to-book ratios of stocks in the context of Stochastic Portfolio Theory. Functionally generated portfolios that depend on auxiliary economic variables other than relative capitalizations ("sizes") are developed in two ways, together with their relative returns with respect to the market. This enables us to identify the value factor (i.e., market-to-book ratio) in returns of such generated portfolios when the auxiliary variables are stocks' book values. Examples of portfolios, as well as their empirical results, are given, with the evidence that, in addition to size, the value factor does affect the performance of the portfolio.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Cu doping effects on the electronic structure of Fe1-xCuxSe

Using angle-resolved photoemission spectroscopy (ARPES), we studied the evolution of the electronic structure of Fe1-xCuxSe from x = 0 to 0.10. We found that the Cu dopant introduces extra electron carriers. The hole bands near the gamma point are observed to steadily shift downward with increasing doping and completely sink down below the Fermi level (EF) for x > 0.05. Meanwhile, the electron pocket near the M point becomes larger but loses the spectral weight near EF. We also observed that effective mass of the electron band near the M point increases with doping. Our result explains why superconductivity disappears and metal insulator transition (MIT) like behavior occurs upon Cu doping in terms of electronic structure, and provide insight into emergent magnetic fluctuation in Fe1-xCuxSe.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Electronic band structure of (111) $SrRuO_{3}$ thin film$-$an angle-resolved photoemission spectroscopy study

We studied the electronic band structure of pulsed laser deposition (PLD) grown (111)-oriented SrRuO$_3$ (SRO) thin films using \textit{in situ} angle-resolved photoemission spectroscopy (ARPES) technique. We observed previously unreported, light bands with a renormalized quasiparticle effective mass of about 0.8$m_{e}$. The electron-phonon coupling underlying this mass renormalization yields a characteristic "kink" in the band dispersion. The self-energy analysis using the Einstein model suggests five optical phonon modes covering an energy range 44 to 90 meV contribute to the coupling. Besides, we show that the quasiparticle spectral intensity at the Fermi level is considerably suppressed, and two prominent peaks appear in the valance band spectrum at binding energies of 0.8 eV and 1.4 eV, respectively. We discuss the possible implications of these observations. Overall, our work demonstrates that high-quality thin films of oxides with large spin-orbit coupling can be grown along the polar (111) orientation by the PLD technique, enabling \textit{in situ} electronic band structure study. This could allow for characterizing the thickness-dependent evolution of band structure of (111) heterostructures$-$a prerequisite for exploring possible topological quantum states in the bilayer limit.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

$\sqrt{2}$$\times$$\sqrt{2}R45^\circ$ surface reconstruction and electronic structure of BaSnO$_3$ film

We studied surface and electronic structures of barium stannate (BaSnO$_3$) thin-film by low energy electron diffraction (LEED), and angle-resolved photoemission spectroscopy (ARPES) techniques. BaSnO$_3$/Ba$_{0.96}$La$_{0.04}$SnO$_3$/SrTiO$_3$ (10 nm/100 nm/0.5 mm) samples were grown using pulsed-laser deposition (PLD) method and were \emph{ex-situ} transferred from PLD chamber to ultra-high vacuum (UHV) chambers for annealing, LEED and ARPES studies. UHV annealing starting from 300$^{\circ}$C up to 550$^{\circ}$C, followed by LEED and ARPES measurements show 1$\times$1 surfaces with non-dispersive energy-momentum bands. The 1$\times$1 surface reconstructs into a $\sqrt{2}$$\times$$\sqrt{2}R45^\circ$ one at the annealing temperature of 700$^{\circ}$C where the ARPES data shows clear dispersive bands with valence band maximum located around 3.3 eV below Fermi level. While the $\sqrt{2}$$\times$$\sqrt{2}R45^\circ$ surface reconstruction is stable under further UHV annealing, it is reversed to 1$\times$1 surface by annealing the sample in 400 mTorr oxygen at 600$^{\circ}$C. Another UHV annealing at 600$^{\circ}$C followed by LEED and ARPES measurements, suggests that LEED $\sqrt{2}$$\times$$\sqrt{2}R45^\circ$ surface reconstruction and ARPES dispersive bands are reproduced. Our results provide a better picture of electronic structure of BaSnO$_3$ surface and are suggestive of role of oxygen vacancies in the reversible $\sqrt{2}$$\times$$\sqrt{2}R45^\circ$ surface reconstruction.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Open Markets

An open market is a subset of an entire equity market composed of a certain fixed number of top capitalization stocks. Though the number of stocks in the open market is fixed, the constituents of the market change over time as each company's rank by its market capitalization fluctuates. When one is allowed to invest also in the money market, the open market resembles the entire 'closed' equity market in the sense that the equivalence of market viability (lack of arbitrage) and the existence of numeraire portfolio (portfolio which cannot be outperformed) holds. When access to the money market is prohibited, some topics such as Capital Asset Pricing Model (CAPM), construction of functionally generated portfolios, and the concept of the universal portfolio are presented in the open market setting.

0 citations0 reviewsNo code linkedOpen access