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Researcher profile

Changyoung Kim

Changyoung Kim contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elcond-mat.supr-concond-mat.mes-hall

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Published work

9 published item(s)

preprint2025arXiv

Low-dimensionality-induced tunable ferromagnetism in SrRuO$_3$ ultrathin films

Quantum materials near electronic or magnetic phase boundaries exhibit enhanced tunability, as their emergent properties become highly sensitive to external perturbations. Here, we demonstrate precise control of ferromagnetism in a SrRuO$_3$ ultrathin film, where a high density of states (DOS), arising from low-dimensional quantum states, places the system at the crossover between a non-magnetic and bulk ferromagnetic state. Using spin- and angle-resolved photoemission spectroscopy (SRPES/ARPES), transport measurements, and theoretical calculations, we systematically tune the Fermi level via electron doping across the high-DOS point. We directly visualize the spin-split band structure and reveal its influence on both magnetic and transport properties. Our findings provide compelling evidence that magnetism can be engineered through DOS control at a phase crossover, establishing a pathway for the rational design of tunable quantum materials.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Heteroepitaxial control of Fermi liquid, Hund metal, and Mott insulator phases in the single-atomic-layer limit

Interfaces between dissimilar correlated oxides can offer devices with versatile functionalities. In that respect, manipulating and measuring novel physical properties of oxide heterointerfaces are highly desired. Yet, despite extensive studies, obtaining direct information on their momentum-resolved electronic structure remains a great challenge. This is because most correlated interfacial phenomena appear within a few atomic layers from the interface, thus limiting the application of available experimental probes. Here, we utilize atomic-scale epitaxy and photoemission spectroscopy to demonstrate the interface control of correlated electronic phases in atomic-scale ruthenate--titanate heterostructures. While bulk SrRuO$_3$ is a ferromagnetic metal, the heterointerfaces exclusively realize three distinct correlated phases in the single-atomic-layer limit. Our theory reveals that atomic-scale structural proximity effects lead to the emergence of Fermi liquid, Hund metal, and Mott insulator phases in the quantum-confined SrRuO$_3$. These results highlight the extensive interfacial tunability of electronic phases, hitherto hidden in the atomically thin correlated heterostructure.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

$B_{\rm 1g}$ phonon anomaly driven by Fermi surface instability at intermediate temperature in YBa$_2$Cu$_3$O$_{7-δ}$

We performed temperature- and doping-dependent high-resolution Raman spectroscopy experiments on YBa$_2$Cu$_3$O$_{7-δ}$ to study $B$$_{\rm 1g}$ phonons. The temperature dependence of the real part of the phonon self-energy shows a distinct kink at $T=T_{\rm B1g}$ above $T$$_{\rm c}$ due to softening, in addition to the one due to the onset of the superconductivity. $T$$_{\rm B1g}$ is clearly different from the pseudogap temperature with a maximum in the underdoped region. The region between $T$$_{\rm B1g}$ and $T$$_{\rm c}$ resembles that of superconducting fluctuation or charge density wave order. While the true origin of the $B$$_{\rm 1g}$ phonon softening is not known, we can attribute it to a gap on the Fermi surface due to an electronic order. Our results may reveal the role of the $B$$_{\rm 1g}$ phonon not only in the superconducting state but also in the intertwined orders in multilayer copper oxide high-$T$$_{\rm c}$ superconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Cu doping effects on the electronic structure of Fe1-xCuxSe

Using angle-resolved photoemission spectroscopy (ARPES), we studied the evolution of the electronic structure of Fe1-xCuxSe from x = 0 to 0.10. We found that the Cu dopant introduces extra electron carriers. The hole bands near the gamma point are observed to steadily shift downward with increasing doping and completely sink down below the Fermi level (EF) for x > 0.05. Meanwhile, the electron pocket near the M point becomes larger but loses the spectral weight near EF. We also observed that effective mass of the electron band near the M point increases with doping. Our result explains why superconductivity disappears and metal insulator transition (MIT) like behavior occurs upon Cu doping in terms of electronic structure, and provide insight into emergent magnetic fluctuation in Fe1-xCuxSe.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Electronic band structure of (111) $SrRuO_{3}$ thin film$-$an angle-resolved photoemission spectroscopy study

We studied the electronic band structure of pulsed laser deposition (PLD) grown (111)-oriented SrRuO$_3$ (SRO) thin films using \textit{in situ} angle-resolved photoemission spectroscopy (ARPES) technique. We observed previously unreported, light bands with a renormalized quasiparticle effective mass of about 0.8$m_{e}$. The electron-phonon coupling underlying this mass renormalization yields a characteristic "kink" in the band dispersion. The self-energy analysis using the Einstein model suggests five optical phonon modes covering an energy range 44 to 90 meV contribute to the coupling. Besides, we show that the quasiparticle spectral intensity at the Fermi level is considerably suppressed, and two prominent peaks appear in the valance band spectrum at binding energies of 0.8 eV and 1.4 eV, respectively. We discuss the possible implications of these observations. Overall, our work demonstrates that high-quality thin films of oxides with large spin-orbit coupling can be grown along the polar (111) orientation by the PLD technique, enabling \textit{in situ} electronic band structure study. This could allow for characterizing the thickness-dependent evolution of band structure of (111) heterostructures$-$a prerequisite for exploring possible topological quantum states in the bilayer limit.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Observation of Kondo hybridization with an orbital-selective Mott phase in 4d Ca2-xSrxRuO4

The heavy fermion state with Kondo-hybridization (KH), usually manifested in f-electron systems with lanthanide or actinide elements, was recently discovered in several 3d transition metal compounds without f-electrons. However, KH has not yet been observed in 4d/5d transition metal compounds, since more extended 4d/5d orbitals do not usually form flat bands that supply localized electrons appropriate for Kondo pairing. Here, we report a doping- and temperature-dependent angle-resolved photoemission study on 4d Ca2-xSrxRuO4, which shows the signature of KH. We observed a spectral weight transfer in the γ-band, reminiscent of an orbital-selective Mott phase (OSMP). The Mott localized γ-band induces KH with the itinerant \b{eta}-band, resulting in spectral weight suppression around the Fermi level. Our work is the first to demonstrate the evolution of the OSMP with possible KH among 4d electrons, and thereby expands the material boundary of Kondo physics to 4d multi-orbital systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

$\sqrt{2}$$\times$$\sqrt{2}R45^\circ$ surface reconstruction and electronic structure of BaSnO$_3$ film

We studied surface and electronic structures of barium stannate (BaSnO$_3$) thin-film by low energy electron diffraction (LEED), and angle-resolved photoemission spectroscopy (ARPES) techniques. BaSnO$_3$/Ba$_{0.96}$La$_{0.04}$SnO$_3$/SrTiO$_3$ (10 nm/100 nm/0.5 mm) samples were grown using pulsed-laser deposition (PLD) method and were \emph{ex-situ} transferred from PLD chamber to ultra-high vacuum (UHV) chambers for annealing, LEED and ARPES studies. UHV annealing starting from 300$^{\circ}$C up to 550$^{\circ}$C, followed by LEED and ARPES measurements show 1$\times$1 surfaces with non-dispersive energy-momentum bands. The 1$\times$1 surface reconstructs into a $\sqrt{2}$$\times$$\sqrt{2}R45^\circ$ one at the annealing temperature of 700$^{\circ}$C where the ARPES data shows clear dispersive bands with valence band maximum located around 3.3 eV below Fermi level. While the $\sqrt{2}$$\times$$\sqrt{2}R45^\circ$ surface reconstruction is stable under further UHV annealing, it is reversed to 1$\times$1 surface by annealing the sample in 400 mTorr oxygen at 600$^{\circ}$C. Another UHV annealing at 600$^{\circ}$C followed by LEED and ARPES measurements, suggests that LEED $\sqrt{2}$$\times$$\sqrt{2}R45^\circ$ surface reconstruction and ARPES dispersive bands are reproduced. Our results provide a better picture of electronic structure of BaSnO$_3$ surface and are suggestive of role of oxygen vacancies in the reversible $\sqrt{2}$$\times$$\sqrt{2}R45^\circ$ surface reconstruction.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Gate-Tunable Reversible Rashba-Edelstein Effect in a Few-Layer Graphene/2H-TaS2 Heterostructure at Room Temperature

We report the observation of current-induced spin polarization, the Rashba-Edelstein effect (REE), and its Onsager reciprocal phenomenon, the spin galvanic effect (SGE), in a few-layer graphene/2H-TaS2 heterostructure at room temperature. Spin-sensitive electrical measurements unveil full spin-polarization reversal by an applied gate voltage. The observed gate-tunable charge-to-spin conversion is explained by the ideal work function mismatch between 2H-TaS2 and graphene, which allows strong interface-induced Bychkov-Rashba interaction with a spin-gap reaching 70 meV, while keeping the Dirac nature of the spectrum intact across electron and hole sectors. The reversible electrical generation and control of the nonequilibrium spin polarization vector, not previously observed in a nonmagnetic material, are elegant manifestations of emergent 2D Dirac fermions with robust spin-helical structure. Our experimental findings, supported by first-principles relativistic electronic structure and transport calculations, demonstrate a route to design low-power spin-logic circuits from layered materials.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Lifted electron pocket and reversed orbital occupancy imbalance in FeSe

The FeSe nematic phase has been the focus of recent research on iron based superconductors (IBSs) due to its unique properties. A number of electronic structure studies were performed to find the origin of the phase. However, such attempts came out with conflicting results and caused additional controversies. Here, we report results from angle resolved photoemission and X-ray absorption spectroscopy studies on FeSe with detwinning by a piezo stack. We have fully resolved band dispersions with orbital characters near the Brillouin zone corner which reveals absence of a Fermi pocket at the Y point in the 1Fe Brillouin zone. In addition, the occupation imbalance between dxz and dyz orbitals is found to be opposite to that of iron pnictides, which is consistent with the identified band characters. These results settle down controversial issues in the FeSe nematic phase and shed light on the origin of nematic phases in IBSs.

0 citations0 reviewsNo code linkedOpen access