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Researcher profile

Dong-Bo Zhang

Dong-Bo Zhang contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

3 published item(s)

preprint2021arXiv

The Phonon Quasiparticle Approach for Anharmonic Properties of Solids

Knowledge of lattice anharmonicity is essential to elucidate distinctive thermal properties in crystalline solids. Yet, accurate \textit{ab initio} investigations of lattice anharmonicity encounter difficulties owing to the cumbersome computations. Here we introduce the phonon quasiparticle approach and review its application to various materials. This method efficiently and reliably addresses lattice anharmonicity by combining \textit{ab initio} molecular dynamics and lattice dynamics calculations. Thus, in principle, it accounts for full anharmonic effects and overcomes finite-size effects typical of \textit{ab initio} molecular dynamics. The validity and effectiveness of the current approach are demonstrated in the computation of thermodynamic and heat transport properties of weakly and strongly anharmonic systems.

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preprint2020arXiv

Giant Flexoelectricity in Bent Silicon Thinfilms

We reveal that strong flexoelectric effect of solids can be induced due to the signfi?cant charge migration along the strain gradient direction, which represents a new understanding of the origin of flexoelectricity. Beyond the linear response theory, we illustrate such charge migration that is driven by an electric field effect in bent silicon thinfilms. Due to such charge migration, the variation of atomic charge no longer represents a linear response to strain gradient and the resulting giant flexoelectric coeffcients being size dependent cannot be treated as a bulk property. The obtained flexoelectric coefficients compare well with the typical experimental values as reported in various ceramics. Our results shed light on elucidating the discrepancy between theory and experiment,and pave a new way to discover excellent flexoelectric performance in conventional materials.

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preprint2019arXiv

Flat Bands in Twisted Bilayers of Two-Dimensional Polar Materials

The existence of Bloch flat bands provides an facile pathway to realize strongly correlated phenomena in materials. Using density-functional theory and tight-binding approach, we show that the flat bands can form in twisted bilayer of hexagonal boron nitride ($h$BN). However, unlike the twisted graphene bilayer where a magic angle is needed to form the flat band, for the polar $h$BN, the flat bands can appear as long as the twisted angle is less than certain critical values. Our simulations reveal that the valence band maximum (conduction band minimum) states are predominantly resided in the regions of the moiré supperlattice where the anion N (cation B) atoms in both layers are on top of each other. The preferential localization of these valence and conduction states originate from the chemical potential difference between N and B and is enhanced by the stacking effects of N and B in both layers, respectively, as demonstrated by an analysis of the energy level order of the $h$BN bilayers with different stacking patterns. When these states are spatially localized because regions with a specific stacking pattern are isolated for moiré supperlattices at sufficient small twist angle, completely flat bands will form. This mechanism is applicable to other twisted bilayers of two-dimensional polar crystals.

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