Researcher profile

Dominik Sisejkovic

Dominik Sisejkovic contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2022arXiv

A Temperature Independent Readout Circuit for ISFET-Based Sensor Applications

The ion-sensitive field-effect transistor (ISFET) is an emerging technology that has received much attention in numerous research areas, including biochemistry, medicine, and security applications. However, compared to other types of sensors, the complexity of ISFETs make it more challenging to achieve a sensitive, fast and repeatable response. Therefore, various readout circuits have been developed to improve the performance of ISFETs, especially to eliminate the temperature effect. This paper presents a new approach for a temperature-independent readout circuit that uses the threshold voltage differences of an ISFET-MOSFET pair. The Linear Technology Simulation Program with Integrated Circuit Emphasis (LTspice) is used to analyze the ISFET performance based on the proposed readout circuit characteristics. A macro-model is used to model ISFET behavior, including the first-level Spice model for the MOSFET part and Verilog-A to model the surface potential, reference electrode, and electrolyte of the ISFET to determine the relationships between variables.In this way, the behavior of the ISFET is monitored by the output voltage of the readout circuit based on a change in the electrolyte's hydrogen potential (pH), determined by the simulation. The proposed readout circuit has a temperature coefficient of 11.9 $ppm/°C$ for a temperature range of 0-100 $°C$ and pH between 1 and 13. The proposed ISFET readout circuit outperforms other designs in terms of simplicity and not requiring an additional sensor.

preprint2022arXiv

Designing ML-Resilient Locking at Register-Transfer Level

Various logic-locking schemes have been proposed to protect hardware from intellectual property piracy and malicious design modifications. Since traditional locking techniques are applied on the gate-level netlist after logic synthesis, they have no semantic knowledge of the design function. Data-driven, machine-learning (ML) attacks can uncover the design flaws within gate-level locking. Recent proposals on register-transfer level (RTL) locking have access to semantic hardware information. We investigate the resilience of ASSURE, a state-of-the-art RTL locking method, against ML attacks. We used the lessons learned to derive two ML-resilient RTL locking schemes built to reinforce ASSURE locking. We developed ML-driven security metrics to evaluate the schemes against an RTL adaptation of the state-of-the-art, ML-based SnapShot attack.

preprint2022arXiv

pHGen: A pH-Based Key Generation Mechanism Using ISFETs

Digital keys are a fundamental component of many hardware- and software-based security mechanisms. However, digital keys are limited to binary values and easily exploitable when stored in standard memories. In this paper, based on emerging technologies, we introduce pHGen, a potential-of-hydrogen (pH)-based key generation mechanism that leverages chemical reactions in the form of a potential change in ion-sensitive field-effect transistors (ISFETs). The threshold voltage of ISFETs is manipulated corresponding to a known pH buffer solution (key) in which the transistors are immersed. To read the chemical information effectively via ISFETs, we designed a readout circuit for stable operation and detection of voltage thresholds. To demonstrate the applicability of the proposed key generation, we utilize pHGen for logic locking -- a hardware integrity protection scheme. The proposed key-generation method breaks the limits of binary values and provides the first steps toward the utilization of multi-valued voltage thresholds of ISFETs controlled by chemical information. The pHGen approach is expected to be a turning point for using more sophisticated bio-based analog keys for securing next-generation electronics.

preprint2022arXiv

X-Fault: Impact of Faults on Binary Neural Networks in Memristor-Crossbar Arrays with Logic-in-Memory Computation

Memristor-based crossbar arrays represent a promising emerging memory technology to replace conventional memories by offering a high density and enabling computing-in-memory (CIM) paradigms. While analog computing provides the best performance, non-idealities and ADC/DAC conversion limit memristor-based CIM. Logic-in-Memory (LIM) presents another flavor of CIM, in which the memristors are used in a binary manner to implement logic gates. Since binary neural networks (BNNs) use binary logic gates as the dominant operation, they can benefit from the massively parallel execution of binary operations and better resilience to variations of the memristors. Although conventional neural networks have been thoroughly investigated, the impact of faults on memristor-based BNNs remains unclear. Therefore, we analyze the impact of faults on logic gates in memristor-based crossbar arrays for BNNs. We propose a simulation framework that simulates different traditional faults to examine the accuracy loss of BNNs on memristive crossbar arrays. In addition, we compare different logic families based on the robustness and feasibility to accelerate AI applications.

preprint2021arXiv

ANDROMEDA: An FPGA Based RISC-V MPSoC Exploration Framework

With the growing demands of consumer electronic products, the computational requirements are increasing exponentially. Due to the applications' computational needs, the computer architects are trying to pack as many cores as possible on a single die for accelerated execution of the application program codes. In a multiprocessor system-on-chip (MPSoC), striking a balance among the number of cores, memory subsystems, and network-on-chip parameters is essential to attain the desired performance. In this paper, we present ANDROMEDA, a RISC-V based framework that allows us to explore the different configurations of an MPSoC and observe the performance penalties and gains. We emulate the various configurations of MPSoC on the Synopsys HAPS-80D Dual FPGA platform. Using STREAM, matrix multiply, and N-body simulations as benchmarks, we demonstrate our framework's efficacy in quickly identifying the right parameters for efficient execution of these benchmarks.

preprint2021arXiv

NeuroHammer: Inducing Bit-Flips in Memristive Crossbar Memories

Emerging non-volatile memory (NVM) technologies offer unique advantages in energy efficiency, latency, and features such as computing-in-memory. Consequently, emerging NVM technologies are considered an ideal substrate for computation and storage in future-generation neuromorphic platforms. These technologies need to be evaluated for fundamental reliability and security issues. In this paper, we present \emph{NeuroHammer}, a security threat in ReRAM crossbars caused by thermal crosstalk between memory cells. We demonstrate that bit-flips can be deliberately induced in ReRAM devices in a crossbar by systematically writing adjacent memory cells. A simulation flow is developed to evaluate NeuroHammer and the impact of physical parameters on the effectiveness of the attack. Finally, we discuss the security implications in the context of possible attack scenarios.