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Researcher profile

Dmitri K. Efetov

Dmitri K. Efetov contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.str-elcond-mat.mtrl-scicond-mat.supr-conquant-phphysics.app-phphysics.optics

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Published work

10 published item(s)

preprint2022arXiv

Giant enhancement of third-harmonic generation in graphene-metal heterostructures

Nonlinear nanophotonics leverages engineered nanostructures to funnel light into small volumes and intensify nonlinear optical processes with spectral and spatial control. Due to its intrinsically large and electrically tunable nonlinear optical response, graphene is an especially promising nanomaterial for nonlinear optoelectronic applications. Here we report on exceptionally strong optical nonlinearities in graphene-insulator-metal heterostructures, demonstrating an enhancement by three orders of magnitude in the third-harmonic signal compared to bare graphene. Furthermore, by increasing the graphene Fermi energy through an external gate voltage, we find that graphene plasmons mediate the optical nonlinearity and modify the third-harmonic signal. Our findings show that graphene-insulator-metal is a promising heterostructure for optically-controlled and electrically-tunable nano-optoelectronic components.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Imaging Chern mosaic and Berry-curvature magnetism in magic-angle graphene

Charge carriers in magic angle graphene come in eight flavors described by a combination of their spin, valley, and sublattice polarizations. When the inversion and time reversal symmetries are broken by the substrate or by strong interactions, the degeneracy of the flavors can be lifted and their corresponding bands can be filled sequentially. Due to their non-trivial band topology and Berry curvature, each of the bands is classified by a topological Chern number, leading to the quantum anomalous Hall and Chern insulator states at integer fillings $ν$ of the bands. It has been recently predicted, however, that depending on the local atomic-scale arrangements of the graphene and the encapsulating hBN lattices, rather than being a global topological invariant, the Chern number C may become position dependent, altering transport and magnetic properties of the itinerant electrons. Using a SQUID-on-tip, we directly image the nanoscale Berry-curvature-induced equilibrium orbital magnetism, the polarity of which is governed by the local Chern number, and detect its two constituent components associated with the drift and the self-rotation of the electronic wave packets. At $ν=1$, we observe local zero-field valley-polarized Chern insulators forming a mosaic of microscopic patches of C=-1, 0, or 1, governed by the local sublattice polarization, consistent with predictions. Upon further filling, we find a first-order phase transition due to recondensation of electrons from valley K to K', which leads to irreversible flips of the local Chern number and the magnetization, and to the formation of valley domain walls giving rise to hysteretic global anomalous Hall resistance. The findings shed new light on the structure and dynamics of topological phases and call for exploration of the controllable formation of flavor domain walls and their utilization in twistronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Quantum critical behavior in magic-angle twisted bilayer graphene

The flat bands of magic-angle twisted bilayer graphene (MATBG) host strongly-correlated electronic phases such as correlated insulators, superconductors and a strange-metal state. The latter state, believed to be key for understanding the electronic properties of MATBG, is obscured by various phase transitions and thus could not be unequivocally differentiated from a metal undergoing frequent electron-phonon collisions. Here, we report transport measurements in superconducting MATBG in which the correlated insulator states are suppressed by screening. The uninterrupted metallic ground state shows resistivity that is linear in temperature over three decades and spans a broad range of doping including those where a correlation-driven Fermi surface reconstruction occurs. This strange-metal behavior is distinguished by Planckian scattering rates and a linear magnetoresistivity. In contrast, near charge neutrality or a fully-filled flat band, as well as for devices twisted away from the magic angle, we observe the archetypal Fermi liquid behavior. Our measurements demonstrate the existence of a quantum critical phase whose fluctuations dominate the metallic ground state throughout a continuum of doping. Further, we observe a transition to the strange metal upon suppression of the superconducting order, suggesting a relationship between quantum fluctuations and superconductivity in MATBG.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Twisted Bilayer Graphene IV. Exact Insulator Ground States and Phase Diagram

We derive the exact insulator ground states of the projected Hamiltonian of magic-angle twisted bilayer graphene (TBG) flat bands with Coulomb interactions in various limits, and study the perturbations away from these limits. We define the (first) chiral limit where the AA stacking hopping is zero, and a flat limit with exactly flat bands. In the chiral-flat limit, the TBG Hamiltonian has a U(4)$\times$U(4) symmetry, and we find that the exact ground states at integer filling $-4\le ν\le 4$ relative to charge neutrality are Chern insulators of Chern numbers $ν_C=4-|ν|,2-|ν|,\cdots,|ν|-4$, all of which are degenerate. This confirms recent experiments where Chern insulators are found to be competitive low-energy states of TBG. When the chiral-flat limit is reduced to the nonchiral-flat limit which has a U(4) symmetry, we find $ν=0,\pm2$ has exact ground states of Chern number $0$, while $ν=\pm1,\pm3$ has perturbative ground states of Chern number $ν_C=\pm1$, which are U(4) ferromagnetic. In the chiral-nonflat limit with a different U(4) symmetry, different Chern number states are degenerate up to second order perturbations. In the realistic nonchiral-nonflat case, we find that the perturbative insulator states with Chern number $ν_C=0$ ($0<|ν_C|<4-|ν|$) at integer fillings $ν$ are fully (partially) intervalley coherent, while the insulator states with Chern number $|ν_C|=4-|ν|$ are valley polarized. However, for $0<|ν_C|\le4-|ν|$, the fully intervalley coherent states are highly competitive (0.005meV/electron higher). At nonzero magnetic field $|B|>0$, a first-order phase transition for $ν=\pm1,\pm2$ from Chern number $ν_C=\text{sgn}(νB)(2-|ν|)$ to $ν_C=\text{sgn}(νB)(4-|ν|)$ is expected, which agrees with recent experimental observations. Lastly, the TBG Hamiltonian reduces into an extended Hubbard model in the stabilizer code limit.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Two-dimensional cuprate nanodetector with single photon sensitivity at T = 20 K

Detecting light at the single-photon level is one of the pillars of emergent photonic technologies. This is realized through state-of-the-art superconducting detectors that offer efficient, broadband and fast response. However, the use of superconducting thin films with low TC limits their operation temperature below 4K. In this work, we demonstrate proof-of-concept nanodetectors based on exfoliated, two-dimensional cuprate superconductor Bi2Sr2CaCu2O8-δ (BSCCO) that exhibit single-photon sensitivity at telecom wavelength at a record temperature of T = 20K. These non-optimized devices exhibit a slow (ms) reset time and a low detection efficiency (10^(-4)). We realize the elusive prospect of single-photon sensitivity on a high-TC nanodetector thanks to a novel approach, combining van der Waals fabrication techniques and a non-invasive nanopatterning based on light ion irradiation. This result paves the way for broader application of single-photon technologies, relaxing the cryogenic constraints for single-photon detection at telecom wavelength.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Measuring local moiré lattice heterogeneity of twisted bilayer graphene

We introduce a new method to continuously map inhomogeneities of a moiré lattice and apply it to large-area topographic images we measure on open-device twisted bilayer graphene (TBG). We show that the variation in the twist angle of a TBG device, which is frequently conjectured to be the reason for differences between devices with a supposed similar twist angle, is about 0.08° around the average of 2.02° over areas of several hundred nm, comparable to devices encapsulated between hBN slabs. We distinguish between an effective twist angle and local anisotropy and relate the latter to heterostrain. Our results imply that for our devices, twist angle heterogeneity has a roughly equal effect to the electronic structure as local strain. The method introduced here is applicable to results from different imaging techniques, and on different moiré materials.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Reentrant Correlated Insulators in Twisted Bilayer Graphene at 25T ($2π$ Flux)

Twisted bilayer graphene (TBG) is remarkable for its topological flat bands, which drive strongly-interacting physics at integer fillings, and its simple theoretical description facilitated by the Bistritzer-MacDonald Hamiltonian, a continuum model coupling two Dirac fermions. Due to the large moiré unit cell, TBG offers the unprecedented opportunity to observe reentrant Hofstadter phases in laboratory-strength magnetic fields near $25$T. This Letter is devoted to magic angle TBG at $2π$ flux where the magnetic translation group commutes. We use a newly developed gauge-invariant formalism to determine the exact single-particle band structure and topology. We find that the characteristic TBG flat bands reemerge at $2π$ flux, but, due to the magnetic field breaking $C_{2z} \mathcal{T}$, they split and acquire Chern number $\pm1$. We show that reentrant correlated insulating states appear at $2π$ flux driven by the Coulomb interaction at integer fillings, and we predict the characteristic Landau fans from their excitation spectrum. We conjecture that superconductivity can also be re-entrant at $2π$ flux.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A liquid nitrogen cooled superconducting transition edge sensor with ultra-high responsivity and GHz operation speeds

Photodetectors based on nano-structured superconducting thin films are currently some of the most sensitive quantum sensors and are key enabling technologies in such broad areas as quantum information, quantum computation and radio-astronomy. However, their broader use is held back by the low operation temperatures which require expensive cryostats. Here, we demonstrate a nitrogen cooled superconducting transition edge sensor, which shows orders of magnitude improved performance characteristics of any superconducting detector operated above 77K, with a responsivity of 9.61x10^4 V/W, noise equivalent power of 15.9 fW/Hz-1/2 and operation speeds up to GHz frequencies. It is based on van der Waals heterostructures of the high temperature superconductor Bi2Sr2CaCu2O8, which are shaped into nano-wires with ultra-small form factor. To highlight the versatility of the detector we demonstrate its fabrication and operation on a telecom grade SiN waveguide chip. Our detector significantly relaxes the demands of practical applications of superconducting detectors and displays its huge potential for photonics based quantum applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

High-order minibands and interband Landau level reconstruction in graphene moire superlattice

The propagation of Dirac fermions in graphene through a long-period periodic potential would result in a band folding together with the emergence of a series of cloned Dirac points (DPs). In highly aligned graphene/hexagonal boron nitride (G/hBN) heterostructures, the lattice mismatch between the two atomic crystals generates a unique kind of periodic structure known as a moiré superlattice. Of particular interests is the emergent phenomena related to the reconstructed band-structure of graphene, such as the Hofstadter butterfly, topological currents, gate dependent pseudospin mixing, and ballistic miniband conduction. However, most studies so far have been limited to the lower-order minibands, e.g. the 1st and 2nd minibands counted from charge neutrality, and consequently the fundamental nature of the reconstructed higher-order miniband spectra still remains largely unknown. Here we report on probing the higher-order minibands of precisely aligned graphene moiré superlattices by transport spectroscopy. Using dual electrostatic gating, the edges of these high-order minibands, i.e. the 3rd and 4th minibands, can be reached. Interestingly, we have observed interband Landau level (LL) crossinginducing gap closures in a multiband magneto-transport regime, which originates from band overlap between the 2nd and 3rd minibands. As observed high-order minibands and LL reconstruction qualitatively match our simulated results. Our findings highlight the synergistic effect of minibands in transport, thus presenting a new opportunity for graphene electronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Critical role of device geometry for the phase diagram of twisted bilayer graphene

The effective interaction between electrons in two-dimensional materials can be modified by their environment, enabling control of electronic correlations and phases. Here, we study the dependence of electronic correlations in twisted bilayer graphene (tBLG) on the separation to the metallic gate(s) in two device configurations. Using an atomistic tight-binding model, we determine the Hubbard parameters of the flat bands as a function of gate separation, taking into account the screening from the metallic gate(s), the dielectric spacer layers and the tBLG itself. We determine the critical gate separation at which the Hubbard parameters become smaller than the critical value required for a transition from a correlated insulator state to a (semi-)metallic phase. We show how this critical gate separation depends on twist angle, doping and the device configuration. These calculations may help rationalise the reported differences between recent measurements of tBLG&#39;s phase diagram and suggests that correlated insulator states can be screened out in devices with thin dielectric layers.

0 citations0 reviewsNo code linkedOpen access